Search Results - "Ma, B.K."

Superconductivity and magnetism of La 2Cu 1− xZn xO 4+ δ chemically oxidized by NaClO by Tu, Q.Y., Chen, X.L., Ma, B.K., Zhao, Z.X., Liang, J.K.

“…The structural, superconducting and magnetic properties of La 2Cu 1− x Zn x O 4+ δ (0≤ x≤0.1) chemically oxidized by NaClO at room temperature were studied…”
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Thermal noise in RF CMOS mixers by Tong, K.Y., Ma, B.K., Yuen, H.T.

“…A noise model for CMOS single-balanced mixers is proposed by considering the noise currents in the MOSFETs, and it is shown that simple analytical equations…”
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Structural and superconducting properties of La 2CuO 4+ δ chemically oxidized by NaClO by Tu, Q.Y, Chen, X.L, Ma, B.K, Zhao, Z.X, Li, J.Q, Liang, J.K

“…A series of La 2CuO 4+ δ samples chemically oxidized in NaClO aqueous solution at room temperature with different oxidation time of 2–120 h have been prepared…”
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Superconductivity and magnetism of La2Cu1-xZnxO4+δ chemically oxidized by naclo by TU, Q. Y, CHEN, X. L, MA, B. K, ZHAO, Z. X, LIANG, J. K

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Structural and superconducting properties of La2CuO4+δ chemically oxidized by NaClO by Tu, Q.Y, Chen, X.L, Ma, B.K, Zhao, Z.X, Li, J.Q, Liang, J.K

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Superconductivity at 45 K in La2CuO4+δ oxidized by NaClO by TU, Q. Y, CHEN, X. L, MA, B. K, ZHAO, Z. X, LAN, Y. C, LIANG, J. K

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Influence of post-implantation annealing on the oxidation behavior of Nb implanted γ-TiAl based alloy by Li, X.Y, Zhang, T.H, Ma, B.K, Zhang, Y.G, Chen, C.Q

“…The influence of post-implantation annealing on the isothermal oxidation behavior of Nb implanted (3×10 17 ions/cm 2) Ti–48 at.%Al was investigated. The…”
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Two dimensional device simulation and fabrication of mesa SOI vertical dual carrier field effect transistor with effective channel length of 30nm for switching ASIC and SOC by Yang, R., Li, G.H., Xu, Y.Z., Chao, Y.F., Tang, Z.M., Yang, Y.H., Ma, B.K., Huang, D.H., Xu, P., Shen, S.G., Lin, C.L., Wu, C.L., Yan, F.Z., Han, D.J., Ren, Y.L., Yu, L.K., Cai, I.M., Tian, X.N., Ji, Y.Z., Du, D.S., Huang, C.

“…Device physics and integrated device and circuit simulation of "dual carrier field effect transistor" (DCFET) with effective channel length of 5-30nm had been…”
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The effect of transverse electric field on the electron-optical-phonon scattering rates in quantum wires by Chang, Kai, Wang, R.Z., Ma, B.K.

“…Within the dielectric continuum approach for the optical phonons, we have calculated the effect of transverse electric field on the intra-subband…”
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Growth and characterization of “infinite layer” films doped with P-type carriers by Sun, Y., Sun, P., Niu, J.S., Sun, Y.G., Ma, B.K.

“…3hin films of undoped and K doped (Sr,Ca) nCuO n+1+δ were prepared on SrTiO 3, LaAlO 3, MgO, ZrO 2, CaNdAlO 4 by pulsed laser deposition (PLD). (Sr,Ca)CuO 2+δ…”
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