Search Results - "MUDHOLKAR, Mihir"

Physics-Based Breakdown Voltage Optimization of Trench MOS Barrier Schottky Rectifiers by Latorre-Rey, Alvaro D., Mudholkar, Mihir, Quddus, Mohammed Tanvir

“…A comprehensive study of the breakdown voltage optimization of trench MOS barrier Schottky (TMBS) rectifiers is performed by means of drift-diffusion…”
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Characterization and Modeling of 4H-SiC Lateral MOSFETs for Integrated Circuit Design by Mudholkar, M., Mantooth, H. A.

“…A new process in 4H-SiC is developed that features n-type buried and inversion channel lateral MOSFETs that are fabricated with several different channel…”
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Characterization and modeling of SiC Junction Barrier Schottky diode for circuit simulation by Ahmed, Shamim, Mantooth, H. Alan, Mudholkar, Mihir, Singh, Ranbir

“…A physics based compact model for SiC Junction Barrier Schottky (JBS) diodes is presented which features a comprehensive physical description of the DC and CV…”
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Datasheet Driven Silicon Carbide Power MOSFET Model by Mudholkar, Mihir, Ahmed, Shamim, Ericson, M. Nance, Frank, S. Shane, Britton, Charles L., Mantooth, H. Alan

“…A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been…”
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A Generic Methodology for Breakdown Voltage Optimization of Lateral Silicon‐On‐Insulator Power Devices by Kumar, Viswanathan Naveen, Mudholkar, Mihir, Quddus, Mohammed Tanvir

“…A generic optimization methodology is presented for the design of drift region in lateral silicon‐on‐insulator (SOI) power devices. The methodology targets a…”
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A charge-based model of Junction Barrier Schottky rectifiers by Latorre-Rey, Alvaro D., Mudholkar, Mihir, Quddus, Mohammed T., Salih, Ali

“…•A charge-based model is proposed for Junction Barrier Schottky (JBS) didoes.•The charge-sharing effect is presented to explain the principles of…”
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Manufacturing optimization for silicon trench rectifiers using NiPt salicide: NiPt salicide formation to modulate electrical parameters by Thomason, Mike, Quddus, Mohammed, Mudholkar, Mihir

“…The purpose of this study was to provide a low cost manufacturing solution for Silicon Trench based Schottky rectifiers utilizing NiPt alloy composition that…”
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Datasheet Driven Silicon Carbide Power MOSFET Model by Mudholkar, Mihir, Ahmed, Shamim, Ericson, M. Nance, Frank, S. Shane, Britton, Charles L., Mantooth, H. Alan

“…A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been…”
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Datasheet Driven Silicon Carbide Power MOSFET Model: SPECIAL ISSUE ON WIDE BANDGAP DEVICES AND THEIR APPLICATIONS by MUDHOLKAR, Mihir, AHMED, Shamim, ERICSON, M. Nance, FRANK, S. Shane, BRITTON, Charles L, ALAN MANTOOTH, H

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A 4H Silicon Carbide Gate Buffer for Integrated Power Systems by Ericson, Nance, Frank, Shane, Britton, Chuck, Marlino, Laura, Sei-Hyung Ryu, Grider, Dave, Mantooth, Alan, Francis, Matt, Lamichhane, Ranjan, Mudholkar, Mihir, Shepherd, Paul, Glover, Michael, Valle-Mayorga, Javier, McNutt, Ty, Barkley, Adam, Whitaker, Bret, Cole, Zach, Passmore, Brandon, Lostetter, Alex

“…A gate buffer fabricated in a 2-μm 4H silicon carbide (SiC) process is presented. The circuit is composed of an input buffer stage with a push-pull output…”
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Trench schottky rectifiers with non-uniform trench depths by Mudholkar, Mihir, Quddus, Mohammed Tanvir, Kalderon, Yohai, Thomason, Mike, Salih, Ali

“…A design methodology to optimize the drift region doping properties in trench Schottky rectifiers has been presented. Advanced lithography is being used for…”
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A 4H Silicon Carbide Gate Buffer for Integrated Power Systems by Ericson, Nance, Frank, Shane, Britton, Chuck, Marlino, Laura, Ryu, Sei-Hyung, Grider, Dave, Mantooth, Alan, Francis, Matt, Lamichhane, Ranjan, Mudholkar, Mihir, Shepherd, Paul, Glover, Michael, Valle-Mayorga, Javier, McNutt, Ty, Barkley, Adam, Whitaker, Bret, Cole, Zach, Passmore, Brandon, Lostetter, Alex

“…We present a gate buffer fabricated in a 2- m 4H silicon carbide (SiC) process. The circuit is composed of an input buffer stage with a push pull output stage,…”
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Characterization and Modeling of 4H-Silicon Carbide Low Voltage MOSFETs and Power MOSFETs by Mudholkar, Mihir

“…The integration of low voltage and high voltage circuits on SiC has profound applications. SiC power devices have proved their superiority in terms of high…”
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A novel trench Schottky rectifier structure with controlled conductivity modulation by Mudholkar, Mihir, Quddus, Mohammed Tanvir, Bushong, Dean, Sarwari, Ahmad, Salih, Ali

“…A Trench MOS Barrier Schottky rectifier (TMBS) structure with a novel conductivity modulation scheme has been presented. The conductivity modulation in the…”
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A UVLO Circuit in SiC Compatible With Power MOSFET Integration by Glover, Michael D., Shepherd, Paul, Francis, A. Matt, Mudholkar, Mihir, Mantooth, Homer Alan, Ericson, Milton Nance, Frank, S. Shane, Britton, Charles L., Marlino, Laura D., McNutt, Ty R., Barkley, Adam, Whitaker, Bret, Lostetter, Alexander B.

“…The design and test of the first undervoltage lock-out circuit implemented in a low-voltage 4H silicon carbide process capable of single-chip integration with…”
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A UVLO Circuit in SiC Compatible With Power MOSFET Integration by Glover, Michael D., Shepherd, Paul, Francis, A. Matt, Mudholkar, Mihir, Mantooth, Homer Alan, Ericson, Milton Nance, Frank, S. Shane, Britton, Charles L., Marlino, Laura D., McNutt, Ty R., Barkley, Adam, Whitaker, Bret, Lostetter, Alexander B.

“…This design and test of the first undervoltage lock-out circuit implemented in a low-voltage 4H silicon carbide process capable of single-chip integration with…”
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A UVLO Circuit in SiC Compatible With Power MOSFET Integration by Glover, Michael D., Shepherd, Paul, Francis, A. Matt, Mudholkar, Mihir, Mantooth, Homer Alan, Ericson, Milton Nance, Frank, S. Shane, Britton, Charles L., Marlino, Laura D., McNutt, Ty R., Barkley, Adam, Whitaker, Bret, Lostetter, Alexander B.

“…Our design and test of the first undervoltage lock-out circuit implemented in a low voltage 4H silicon carbide process capable of single-chip integration with…”
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Characterization and Modeling of 4H-Silicon Carbide Low Voltage MOSFETs and Power MOSFETs by Mudholkar, Mihir

“…The integration of low voltage and high voltage circuits on SiC has profound applications. SiC power devices have proved their superiority in terms of high…”
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Wide temperature range compact modeling of SiGe HBTs for space applications by Lan Luo, Ziyan Xu, Guofu Niu, Chakraborty, P S, Peng Cheng, Thomas, D, Moen, K, Cressler, J D, Mudholkar, M, Mantooth, H A

“…We present here wide temperature range compact modeling of Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) based on Most EXquisite TRAnsistor…”
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Carrier separation technique to optimize conductivity modulation in high voltage rectifiers by Quddus, Mohammed Tanvir, Mudholkar, Mihir, Salih, Ali

“…Hybrid power rectifier structures like Junction Barrier Schottky (JBS) rectifier and Trench JFET Schottky rectifier (TJFET) employ a combination of minority…”
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