Search Results - "MORVAN, S"

The sources and distribution of carbon (DOC, POC, DIC) in a mangrove dominated estuary (French Guiana, South America) by Ray, R., Michaud, E., Aller, R. C., Vantrepotte, V., Gleixner, G., Walcker, R., Devesa, J., Le Goff, M., Morvan, S., Thouzeau, G.

“…Mangrove forests are highly productive coastal ecosystems that significantly influence global carbon cycling. This study characterized the sources of dissolved…”
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The 2010 Mw 8.8 Maule Megathrust Earthquake of Central Chile, Monitored by GPS by VIGNY, C, SOCQUET, A, CARRIZO, D, BEJAR-PIZARRO, M, BARRIENTOS, S, ARMIJO, R, ARANDA, C, VALDERAS-BERMEJO, M.-C, ORTEGA, I, BONDOUX, F, BAIZE, S, LYON-CAEN, H, PEYRAT, S, PAVEZ, A, VILOTTE, J. P, BEVIS, M, BROOKS, B, SMALLEY, R, PARRY, H, BAEZ, J.-C, BLANCO, M, CIMBARO, S, KENDRICK, E, RUEGG, J.-C, METOIS, M, MADARIAGA, R, MORVAN, S, LANDERI, M, LACASSIN, R, CAMPOS, J

“…Large earthquakes produce crustal deformation that can be quantified by geodetic measurements, allowing for the determination of the slip distribution on the…”
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GPS-derived interseismic coupling on the subduction and seismic hazards in the Atacama region, Chile by Métois, M., Vigny, C., Socquet, A., Delorme, A., Morvan, S., Ortega, I., Valderas-Bermejo, C.-M

“…The Atacama region (between 29°S and 25°S) is located in the North-Central area of Chile, a tectonically complex transition area between North and Central…”
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Study of an embedded buried SiGe structure as a mobility booster for fully-depleted SOI MOSFETs at the 10nm node by Morvan, S., Andrieu, F., Barbé, J.-C., Ghibaudo, G.

“…This paper presents mechanical simulations results of an innovative strain transfer structure consisting in a buried compressive SiGe layer embedded under an…”
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Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains by Hartmann, J.M., Benevent, V., Barnes, J.P., Veillerot, M., Lafond, D., Damlencourt, J.F., Morvan, S., Prévitali, B., Andrieu, F., Loubet, N., Dutartre, D.

“…► Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes. ► “Mushroom-free” Si raised sources and drains; conformal growth along spacers. ► SiGe:B CSEGE:…”
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Study of an embedded buried SiGe structure as a mobility booster for fully-depleted SOI MOSFETs at the 10 nm node by MORVAN, S, ANDRIEU, F, BARBE, J.-C, GHIBAUDO, G

“…This paper presents mechanical simulations results of an innovative strain transfer structure consisting in a buried compressive SiGe layer embedded under an…”
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The 2010 M w 8.8 Maule Megathrust Earthquake of Central Chile, Monitored by GPS by Vigny, C., Socquet, A., Peyrat, S., Ruegg, J.-C., Métois, M., Madariaga, R., Morvan, S., Lancieri, M., Lacassin, R., Campos, J., Carrizo, D., Bejar-Pizarro, M., Barrientos, S., Armijo, R., Aranda, C., Valderas-Bermejo, M.-C., Ortega, I., Bondoux, F., Baize, S., Lyon-Caen, H., Pavez, A., Vilotte, J. P., Bevis, M., Brooks, B., Smalley, R., Parra, H., Baez, J.-C., Blanco, M., Cimbaro, S., Kendrick, E.

“…Large earthquakes produce crustal deformation that can be quantified by geodetic measurements, allowing for the determination of the slip distribution on the…”
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A 22nm FDSOI Technology Optimized for RF/mmWave Applications by Ong, S. N., Lehmann, S., Chow, W. H., Zhang, C., Schippel, C., Chan, L. H. K., Andee, Y., Hauschildt, M., Tan, K. K. S., Watts, J., Lim, C. K., Divay, A., Wong, J. S., Zhao, Z., Govindarajan, M., Schwan, C., Huschka, A., Bcllaouar, A., Loo, W., Mazurier, J., Grass, C., Taylor, R., Chew, K. W. J., Embabi, S., Workman, G., Pakfar, A., Morvan, S., Sundaram, K., Lau, M. T., Rice, B., Harame, D.

“…This paper describes a 22nm FDSOI technology optimized for RF/mmWave applications. The offering consists of high speed mmWave FET transistors, and a thick dual…”
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Technical aids for the physically handicapped: a psychological study of the master robot by Morvan, J S, Guichard, J P, Torossian, V

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Gate-last integration on planar FDSOI MOSFET: Impact of mechanical boosters and channel orientations by Morvan, S., Le Royer, C., Andrieu, F., Perreau, P., Morand, Y., Cooper, D., Casse, M., Garros, X., Hartmann, J.-M, Tosti, L., Brevard, L., Ponthenier, F., Rivoire, M., Euvrard, C., Seignard, A., Besson, P., Caubet, P., Leroux, C., Gassilloud, R., Saidi, B., Allain, F., Tabone, C., Poiroux, T., Faynot, O.

“…We present for the first time Gate-Last (GL) planar Fully Depleted (FD) SOI MOSFETs featuring both ultra thin silicon body (3-5 nm) and BOX (25 nm)…”
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A joint detection-estimation scheme for the analysis of noisy complex sinusoids by Poulalion, G., Morvan, S., Berthoumieu, Y., Najim, M.

“…Classical high resolution spectral analysis methods for the estimation of complex sinusoids parameters require the a priori knowledge of the number of…”
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Optimization of RF-22nm FDSOI figures of merit with 3D TCAD simulation by Scheiblin, P., Andee, Y., Mazurier, J., Harame, D., Lacord, J., Lucci, L., Barbe, J.C., Zaka, A., Bazizi, E. M., Herrmann, T., Morvan, S., Pirro, L.

“…The aim of this study is to illustrate the efficiency of TCAD for simulating RF devices in advanced technology nodes and identify optimization paths. A…”
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Gate-last integration on planar FDSOI for low-V sub(Tp) and low-EOT MOSFETs by Morvan, S, Andrieu, F, Leroux, C, Garros, X, Casse, M, Martin, F, Gassilloud, R, Morand, Y, Le Royer, C, Besson, P, Roure, M-C, Euvrard, C, Rivoire, M, Seignard, A

“…We integrated planar fully depleted (FD) SOI MOSFETs with a gate-last on high-k first (GL-HKF) down to gate lengths of Lg = 15 nm and active widths of W= 80…”
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22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications by Carter, R., Mazurier, J., Pirro, L., Sachse, J.-U, Baars, P., Faul, J., Grass, C., Grasshoff, G., Javorka, P., Kammler, T., Preusse, A., Nielsen, S., Heller, T., Schmidt, J., Niebojewski, H., Chou, P.-Y, Smith, E., Erben, E., Metze, C., Bao, C., Andee, Y., Aydin, I., Morvan, S., Bernard, J., Bourjot, E., Feudel, T., Harame, D., Nelluri, R., Thees, H.-J, M-Meskamp, L., Kluth, J., Mulfinger, R., Rashed, M., Taylor, R., Weintraub, C., Hoentschel, J., Vinet, M., Schaeffer, J., Rice, B.

“…22FDX™ is the industry's first FDSOI technology architected to meet the requirements of emerging mobile, Internet-of-Things (IoT), and RF applications. This…”
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Gate-last integration on planar FDSOI for low-VTp and low-EOT MOSFETs by Morvan, S., Andrieu, F., Leroux, C., Garros, X., Cassé, M., Martin, F., Gassilloud, R., Morand, Y., Le Royer, C., Besson, P., Roure, M.-C., Euvrard, C., Rivoire, M., Seignard, A., Desvoivres, L., Barnola, S., Allouti, N., Caubet, P., Weber, U., Baumann, P.K., Weber, O., Tosti, L., Perreau, P., Ponthenier, F., Ghibaudo, G., Poiroux, T.

“…[Display omitted] •We integrated a gate-last on high-k first on planar fully depleted SOI MOSFETs.•pMOSFETs reach a low threshold voltage of…”
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Gate-last integration on planar FDSOI for low-VTp and low-EOT MOSFETs: Insulating Films on Semiconductors 2013 by MORVAN, S, ANDRIEU, F, ROURE, M.-C, EUVRARD, C, RIVOIRE, M, SEIGNARD, A, DESVOIVRES, L, BARNOLA, S, ALLOUTI, N, CAUBET, P, WEBER, U, BAUMANN, P. K, LEROUX, C, WEBER, O, TOSTI, L, PERREAU, P, PONTHENIER, F, GHIBAUDO, G, POIROUX, T, GARROS, X, CASSE, M, MARTIN, F, GASSILLOUD, R, MORAND, Y, LE ROYER, C, BESSON, P

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Interactive distributed guided tours of historical sites by Popovici, D.-M., Morvan, S., Maisel, E., Tisseau, J.

“…In this paper we propose a new metaphor of information retrieving, usable in heritage management and publishing. Based on the net, the user is able to…”
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Efficiency of mechanical stressors in Planar FDSOI n and p MOSFETs down to 14nm gate length by Morvan, S., Andrieu, F., Casse, M., Weber, O., Xu, N., Perreau, P., Hartmann, J. M., Barbe, J. C., Mazurier, J., Nguyen, P., Fenouillet-Béranger, C., Tabone, C., Tosti, L., Brevard, L., Toffoli, A., Allain, F., Lafond, D., Nguyen, B. Y., Ghibaudo, G., Boeuf, F., Faynot, O., Poiroux, T.

“…We fabricated highly stressed Fully Depleted Silicon-On-Insulator (FDSOI) n and pMOSFETs reaching I ON,n /I ON,p =1148/1014μA/μm drive current at I OFF,n /I…”
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High resolution radar tomography by Poulalion, G., Flous, O., Morvan, S., Najim, M.

“…Tomographic imaging deals with reconstructing an image from its projections. In the electromagnetic field, cross-range projections can be obtained from a…”
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Improved gm and RTN Device Performance using Thick SOI in 22FDX® for Analog Applications by Pirro, L., Zaka, A., Morvan, S., Zimmerhackl, O., Nelluri, R., Hermann, T., Majer, M., Pagel, H., Wu, N., Otto, M., Hoentschel, J.

“…This work presents the effects of silicon film thickness on analog performance on a FDSOI transistor. The increase of silicon film thickness leads to higher…”
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