Search Results - "MOLINA, S.I."

Materials with enhanced adhesive properties based on acrylonitrile-butadiene-styrene (ABS)/thermoplastic polyurethane (TPU) blends for fused filament fabrication (FFF) by de León, A.S., Domínguez-Calvo, A., Molina, S.I.

“…In the current work, we prepared a novel material suitable for additive manufacturing by using acrylonitrile-butadiene-styrene (ABS) copolymer as matrix and a…”
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Low dose electron tomography of novel nanocomposites for additive manufacturing by Herrera, M., Hernández-Saz, J., Fernández-Delgado, N., Valencia, L.M., Molina, S.I.

“…The development of new nanocomposites with added functionalities for Additive Manufacturing (AM) requires of a deep understanding of the 3D distribution of the…”
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Structural and chemical characterization of CdSe-ZnS core-shell quantum dots by Fernández-Delgado, N., Herrera, M., Tavabi, A.H., Luysberg, M., Dunin-Borkowski, R.E., Rodriguez-Cantó, P.J., Abargues, R., Martínez-Pastor, J.P., Molina, S.I.

“…[Display omitted] •Photoluminescence and quantum yield of CdSe QDs are greatly improved when covered by ZnS shell.•The synthesis by hot injection and SILAR…”
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Column-by-column compositional mapping by Z-contrast imaging by Molina, S.I., Sales, D.L., Galindo, P.L., Fuster, D., González, Y., Alén, B., González, L., Varela, M., Pennycook, S.J.

“…A phenomenological method is developed to determine the composition of materials, with atomic column resolution, by analysis of integrated intensities of…”
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Extreme voltage recovery in GaAs:Ti intermediate band solar cells by Linares, P.G., Martí, A., Antolín, E., Ramiro, I., López, E., Hernández, E., Fuertes Marrón, D., Artacho, I., Tobías, I., Gérard, P., Chaix, C., Campion, R.P., Foxon, C.T., Stanley, C.R., Molina, S.I., Luque, A.

“…Intermediate band materials incorporate a collection of energy levels with special optoelectronic properties within the semiconductor bandgap. This feature…”
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Growth of III-nitrides on Si(1 1 1) by molecular beam epitaxy Doping, optical, and electrical properties by Calleja, E, Sánchez-Garcı́a, M.A, Sánchez, F.J, Calle, F, Naranjo, F.B, Muñoz, E, Molina, S.I, Sánchez, A.M, Pacheco, F.J, Garcı́a, R

“…The growth of high-quality III-nitrides by plasma-assisted molecular beam epitaxy on Si(1 1 1) substrates is addressed. A combination of optimized AlN buffer…”
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Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer by Beltran, A.M., Ben, T., Sanchez, A.M., Ripalda, J.M., Taboada, A.G., Molina, S.I.

“…GaSb incorporation to InAs/GaAs quantum dots is considered for improving the opto-electronic properties of the systems. In order to optimize these properties,…”
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Degradation of thermoplastic polymers for fused filament fabrication under (S)TEM electron beam irradiation by Valencia, L.M., Hernández-Saz, J., Molina, S.I., Herrera, M.

“…•Electron degradation of four thermoplastics during STEM-EELS analyses is investigated.•Polymers degradation occur to a larger extent at the beginning of…”
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A sugar-beet waste based thermoplastic agro-composite as substitute for raw materials by Suffo, M., Mata, M. de la, Molina, S.I.

“…The creation of plastic composites allows tuning the polymer properties in order to reach the desired performance for many different applications. Within this…”
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Induced damage during STEM-EELS analyses on acrylic-based materials for Stereolithography by Valencia, L.M., de la Mata, M., Herrera, M., Delgado, F.J., Hernández-Saz, J., Molina, S.I.

“…•The degradation mechanism of acrylic resins during STEM-EELS analyses is investigated.•Mass loss and compositional changes are demonstrated during electron…”
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Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells by Kret, J., Tournet, J., Parola, S., Martinez, F., Chemisana, D., Morin, R., Mata, M. de la, Fernández-Delgado, N., Khan, A.A., Molina, S.I., Rouillard, Y., Tournié, E., Cuminal, Y.

“…III-Sb semiconductors cover the whole 0.29–1.64 eV bandgap range, allowing us to grow several subcells of a multi-junction solar cell lattice-matched to GaSb…”
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Analysis of electron beam damage of exfoliated MoS2 sheets and quantitative HAADF-STEM imaging by Garcia, Alejandra, Raya, Andres M., Mariscal, Marcelo M., Esparza, Rodrigo, Herrera, Miriam, Molina, Sergio I., Scavello, Giovanni, Galindo, Pedro L., Jose-Yacaman, Miguel, Ponce, Arturo

“…In this work we examined MoS2 sheets by aberration-corrected scanning transmission electron microscopy (STEM) at three different energies: 80, 120 and 200kV…”
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Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering by Núñez-Cascajero, A., Valdueza-Felip, S., Blasco, R., de la Mata, M., Molina, S.I., González-Herráez, M., Monroy, E., Naranjo, F.B.

“…The effect of an AlN buffer layer thickness on the structural, morphological and optical properties of n- Al0.37In0.63N deposited on p-Si (111) by…”
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Gaussian kernel density functions for compositional quantification in atom probe tomography by Hernández-Saz, J., Pizarro, J., Herrera, M., Molina, S.I., Galindo, P.L.

“…Atom probe tomography (APT) has the ability to identify the nature and position of single atoms in a material with an almost 3D atomic resolution. However, the…”
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MBE growth of GaN and AlGaN layers on Si(1 1 1) substrates: doping effects by Sánchez-Garcı́a, M.A, Calleja, E, Naranjo, F.B, Sánchez, F.J, Calle, F, Muñoz, E, Sánchez, A.M, Pacheco, F.J, Molina, S.I

“…High-quality GaN layers with 8 arcmin (X-ray diffraction full-width at half-maximum, XRD FWHM) and rms surface roughness of 57 Å are grown on Si(1 1 1)…”
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Effect of the thermal annealing and the nominal composition in the elemental distribution of InxAl1-xAsySb1-y for triple junction solar cells by Hernández-Saz, J., Herrera, M., Pizarro, J., Gonzalez, M., Abell, J., Walters, R., Galindo, P.L., Duguay, S., Molina, S.I.

“…In this work, the effect of thermal annealing under As overpressure in the composition distribution of In8Al42As34.5Sb15.5 layers, lattice matched to InP for…”
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Electron microscopy study of SiC obtained by the carbonization of Si(111) by Pacheco, F.J., Sanchez, A.M., Molina, S.I., Araújo, D., Devrajan, J., Steckl, A.J., García, R.

“…A SiC thin film grown by propane carbonization of a Si(111) substrate has been characterized by transmission electron microscopy and scanning electron…”
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Influence of the growth temperature on the composition distribution at sub-nm scale of InAlAsSb for solar cells by Hernández-Saz, J., Herrera, M., Pizarro, J., Galindo, P.L., Gonzalez, M., Abell, J., Walters, R.J., Molina, S.I., Duguay, S.

“…The composition distribution of In0.16Al0.34As0.41Sb0.09 layers grown at different temperatures with applications in solar cells have been analysed by atom…”
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Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots by Fernández-Delgado, N., Herrera, M., Chisholm, M.F., Kamarudin, M.A., Zhuang, Q.D., Hayne, M., Molina, S.I.

“…[Display omitted] •GaSb QDs are more elongated and Sb is less concentrated after the thermal annealing.•The density of misfit dislocations in GaSb QDs is…”
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Influence of the crosstalk on the intensity of HAADF‐STEM images of quaternary semiconductor materials by BALADÉS, N., HERRERA, M., SALES, D.L., GUERRERO, M.P., GUERRERO, E., GALINDO, P.L., MOLINA, S.I.

“…Summary The influence of the neighbouring atomic‐columns in determining the composition at atomic column scale of quaternary semiconductor compounds, using…”
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