Search Results - "MOISON, J. M"
-
1
Surface Roughness and Light Scattering in a Small Effective Area Microstructured Fiber
Published in Journal of lightwave technology (01-06-2009)“…We report here the combined study of air/silica surface roughness and light scattering in a microstructured optical fiber designed for non-linear operation…”
Get full text
Journal Article -
2
Self-organized growth of regular nanometer-scale InAs dots on GaAs
Published in Applied physics letters (10-01-1994)“…The deposition of InAs on GaAs proceeds first by two-dimensional (2D) growth and above a 1.75-monolayer coverage by the formation of single-crystal dots on a…”
Get full text
Journal Article -
3
Evaluation of a highly nonlinear microstructured optical fiber by near-field scanning optical microscopy and simulations: nonlinear coefficient and coupling losses
Published in Applied physics. B, Lasers and optics (2005)“…We report on the evaluation of a microstructured optical fiber (MOF) designed for non-linear signal processing applications, i.e., with a very small guided…”
Get full text
Journal Article -
4
Light transmission in multiple or single subwavelength trefoil channels of microstructured fibers
Published in Optics express (21-02-2005)“…We evaluate the trefoil channels present between the holes of microstructured fibers as a potential dense array of small waveguides. In channels with an inner…”
Get full text
Journal Article -
5
Electromagnetic field confined and tailored with a few air holes in a photonic-crystal fiber
Published in Applied physics. B, Lasers and optics (01-07-2005)“…Conventional and scanning near-field optical microscopy techniques are cross referenced to femtosecond nonlinear-optical measurements and finite-element…”
Get full text
Journal Article -
6
Improved reproducibility of AlGaInAs laser threshold by InP substrate deoxidation under phosphorous flux
Published in Journal of electronic materials (01-05-1997)Get full text
Journal Article -
7
-
8
Interaction of atomic hydrogen with native oxides on GaAs(100)
Published in Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (01-07-1992)“…GaAs (100) covered with its native oxides is exposed to increasing doses of low energy atomic hydrogen in order to test the possibility of using it for surface…”
Get full text
Conference Proceeding Journal Article -
9
Influence of the near-band-edge surface states on the luminescence efficiency of InP
Published in Applied physics letters (19-05-1986)“…We report the first simultaneous measurements of the photoluminescence yield and of the basic electronic properties (density of states, position of the Fermi…”
Get full text
Journal Article -
10
Self-organized growth of InAs/GaAs quantum boxes
Published in Applied surface science (01-02-1996)Get full text
Conference Proceeding -
11
Surface reactions of silane with oxidized InP and their application to the improvement of chemical vapor deposition grown, InP-based metal-insulator-semiconductor devices
Published in Applied physics letters (03-10-1988)“…The first stage of chemical vapor deposition of SiO2 from SiH4 and O2 on InP has been investigated. SiH4 is shown to interact only with an oxidized InP…”
Get full text
Journal Article -
12
Near-surface GaAs/Ga0.7Al0.3As quantum wells : interaction with the surface states
Published in Physical review. B, Condensed matter (15-06-1990)Get full text
Journal Article -
13
Near-field optical imaging of light propagation in semiconductor waveguide structures
Published in Applied physics letters (24-08-1998)“…We have investigated light propagation in optical devices by near-field scanning optical microscopy (NSOM) at the telecommunication wavelength of 1.55 μm. NSOM…”
Get full text
Journal Article -
14
Surface localization of the photochemical vapor deposition of SiO2 on InP at low pressure and room temperature
Published in Applied physics letters (11-03-1991)“…The first stages of the chemical vapor deposition of SiO2 on chemically polished InP substrates, promoted by UV illumination at room temperature and low (≊0.01…”
Get full text
Journal Article -
15
Surface segregation of third-column atoms in group III-V arsenide compounds: ternary alloys and heterostructures
Published in Physical review. B, Condensed matter (15-09-1989)Get full text
Journal Article -
16
Epitaxial regrowth of an InAs surface on InP: an example of artificial surfaces
Published in Physical review. B, Condensed matter (01-08-1986)Get full text
Journal Article -
17
Room temperature enhancement and inhibition of spontaneous emission in semiconductor microcavities
Published in Applied physics letters (28-08-2000)“…We have fabricated planar semiconductor microcavities with metallic mirrors in which we have observed both enhancement and inhibition of spontaneous emission,…”
Get full text
Journal Article -
18
Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots
Published in Applied physics letters (01-10-2001)“…Low-pressure metalorganic-vapor-phase-epitaxy (LP-MOVPE) grown InGaAs/GaAs quantum dots (QDs) emitting around 1.3 μm have been studied by photoluminescence and…”
Get full text
Journal Article -
19
Reconstruction, step ordering, and frustration on vicinal GaAs surfaces
Published in Physical review. B, Condensed matter (15-11-1993)Get full text
Journal Article -
20