Search Results - "MOERKIRK, R. P"

Photoreflectance study of surface Fermi level in GaAs and GaAlAs by SHEN, H, DUTTA, M, FOTIADIS, L, NEWMAN, P. G, MOERKIRK, R. P, CHANG, W. H, SACKS, R. N

“…Franz–Keldysh oscillations from GaAs and AlGaAs structures have been studied and we find that the electric field obtained from the oscillations is in agreement…”
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Annealing effects on heavily carbon-doped GaAs by HAN, W. Y, LU, Y, LEE, H. S, COLE, M. W, SCHAUER, S. N, MOERKIRK, R. P, JONES, K. A, YANG, L. W

“…The hole concentrations and lattice mismatch with the GaAs substrate of heavily carbon-doped epilayers (4.7×1019 and 9.8×1019 cm−3) were increased and the…”
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Effects of annealing conditions on heavily carbon-doped InGaAs by HAN, W. Y, CALDERON, L, LU, Y, SCHAUER, S. N, MOERKIRK, R. P, LEE, H. S, FLEMISH, J. R, JONES, K. A, YANG, L. W

“…Two heavily carbon doped InGaAs samples (2.20×1019 and 1.92×1019 cm−3) with low In mol fractions (1% and 8%) were annealed with or without silicon nitride caps…”
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Broad-bandwidth, high-responsivity intermediate growth temperature GaAs MSM photodetectors by Tousley, B.C., Davids, N., Sayles, A.H., Paolella, A., Cooke, P., Lemoune, M.L., Moerkirk, R.P., Nabet, B.

“…In this letter, we report the design, fabrication, parametric testing, and analysis of a intermediate growth temperature (IGT) GaAs MSM photodetectors. The…”
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Application of superlattice bandpass filters in 10 μm infrared detection by Choi, K. K., Dutta, M., Moerkirk, R. P., Kuan, C. H., Iafrate, G. J.

“…Recently, experimental evidence has revealed that the energy distribution of the dark current in a typical multiple quantum well GaAs infrared detector is…”
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Application of superlattice bandpass filters in 10 micron infrared detection by Choi, K K, Dutta, M, MOERKIRK, R P, Kuan, C H, Iafrate, G J

“…The current transfer ratio of an infrared hot-electron transistor with a superlattice collector filter is presented. From the current transfer characteristics,…”
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Intermediate temperature molecular beam-epitaxy growth for design of large-area metal-semiconductor-metal photodetectors by Nabet, Bahram, Paolella, Arthur, Cooke, Paul, Lemuene, Mary L., Moerkirk, Robert P., Liou, Liann-Chern

“…Large-area metal-semiconductor-metal (MSM) photodetectors are fabricated on molecular beam epitaxy (MBE) grown GaAs material at growth temperatures ranging…”
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