Search Results - "MISHIMA, Yasuyoshi"

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    New Strained Silicon-on-Insulator Fabricated by Laser-Annealing Technology by Mishima, Yasuyoshi, Ochimizu, Hirohisa, Mimura, Atsushi

    Published in Japanese Journal of Applied Physics (01-04-2005)
    “…A new low temperature process that can be used to fabricate a strained silicon-on insulator (SOI) using an excimer-laser-irradiated relaxation technique is…”
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    Journal Article
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    14‐3: High‐Performance Organic‐TFT Circuits Fabricated by All‐Printing Technology on Flexible Plastic Substrates by Mishima, Yasuyoshi, Akiyama, Masahiko, Hashimoto, Katsuyoshi, Watanabe, Naoki, Kamata, Toshihide

    “…We demonstrate the feasibility of fabricating all‐printed organic TFT circuits by high precision alignment technology on flexible plastic substrates. The ring…”
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    Journal Article
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    The effects of laser annealing ambient and the number of laser shots on the morphology of poly-si films by Suga, Katsuyuki, Chida, Mitsuru, Hara, Akito, Mishima, Yasuyoshi, Sasaki, Nobuo

    “…We have examined the effects of the laser annealing ambient and the number of laser shots on the morphology and the grain size of excimer laser‐annealed…”
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    Journal Article
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    Silicon Thin-Film Formation by Direct Photochemical Decomposition of Disilane by Mishima, Yasuyoshi, Hirose, Masataka, Osaka, Yukio, Nagamine, Kunihiro, Ashida, Yoshinori, Kitagawa, Nobuhisa, Isogaya, Kazuyoshi

    Published in Japanese Journal of Applied Physics (01-01-1983)
    “…Silicon thin-films have been deposited by the direct photolysis of disilane at a substrate temperature below 300°C. The growth rate depends on irradiation…”
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    Journal Article
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    Hydrogenated amorphous silicon produced by pyrolysis of disilane in a hot wall reactor by ASHIDA, Y, MISHIMA, Y, HIROSE, M, OSAKA, Y, KOJIMA, K

    Published in Japanese Journal of Applied Physics (01-01-1984)
    “…Deposition kinetics and physical properties of hydrogenated amorphous silicon produced by low-pressure chemical vapor deposition of disilane have been…”
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    Journal Article
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    Internal Photoemission in a-Si:H Schottky-Barrier and MOS Structures by Yamamoto, Tomio, Mishima, Yasuyoshi, Hirose, Masataka, Osaka, Yukio

    Published in Japanese Journal of Applied Physics (01-01-1981)
    “…Internal photoemission of metal/a-Si: H and metal/SiO 2 /a-Si:H systems have been measured in the temperature range 86 to 300 K. The height of the potential…”
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    Journal Article
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    Current Transport Mechanism of Hydrogenated Amorphous Silicon Schottky Barrier Diodes by Mishima, Yasuyoshi, Hirose, Masataka, Osaka, Yukio

    Published in Japanese Journal of Applied Physics (01-01-1981)
    “…We report detailed studies on the forward current-voltage characteristics of Pd/a-Si:H Schottky barrier diodes. Exact values of the barrier height and its…”
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    Journal Article
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    Nucleation of Microcrystallites in Phosphorus-Doped Si:H Films by Mishima, Yasuyoshi, Hamasaki, Toshihiko, Kurata, Hiroyuki, Hirose, Masataka, Osaka, Yukio

    Published in Japanese Journal of Applied Physics (01-01-1981)
    “…Structural properties of partially crystallized Si:H films prepared by glow discharge technique have been studied by Raman scattering and optical absorption…”
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    Journal Article
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    Strained-silicon formation on relaxed silicon-germanium/silicon-on-insulator substrate using laser annealing by Mishima, Yasuyoshi, Ochimizu, Hirosato, Mimura, Atsushi

    Published in Applied physics letters (14-02-2005)
    “…We propose a low-temperature process to fabricate strained silicon on silicon-germanium (SiGe)/silicon-on-insulator (SOI) substrates using excimer laser…”
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    Journal Article
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    Improved lifetime of poly-Si TFTs with a self-aligned gate-overlapped LDD structure by Mishima, Y., Ebiko, Y.

    Published in IEEE transactions on electron devices (01-06-2002)
    “…We investigated the lifetimes for various poly-Si thin film transistor (TFT) structures. A gate-overlapped lightly doped drain (GOLDD) structure was…”
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    Journal Article
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    Characteristics of aluminum substitution technology for self-aligned full metal gate nMOSFETs by Mishima, Y., Shido, H., Kurahashi, T., Nagata, T., Naganuma, J., Kudo, H., Nakamura, S.

    Published in IEEE transactions on electron devices (01-05-2005)
    “…We investigated self-aligned metal gate MOSFETs that feature an ideal low-resistance aluminum gate using aluminum substitution technology (AST). This…”
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    Journal Article
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    P-3: The Effect of a Laser Annealing Ambient on the Morphology and TFT Performance of Poly-Si Films by Suga, Katsuyuki, Chida, Mitsuru, Mishima, Yasuyoshi, Hara, Akito, Sasaki, Nobuo

    “…We have examined the effect of a laser annealing ambient on the morphology and TFT performance of poly‐Si films. Oxygen in the ambient prevents the relaxation…”
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    Journal Article
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    Ultra-thin strained Si on insulator substrate using laser annealing by Mishima, Y., Mimura, A., Fukuda, M., Ochimizu, H.

    “…We describe a low-temperature process for fabricating strained silicon on insulator (SOI) substrates using excimer laser annealing technology. We used an…”
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    Conference Proceeding
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