Search Results - "MISHIMA, Yasuyoshi"
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Multi-Wall Channel Transistor for P-type Metal Oxide Semiconductor Field-Effect Transistor Performance Improvement
Published in Japanese Journal of Applied Physics (01-08-2006)Get full text
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New Strained Silicon-on-Insulator Fabricated by Laser-Annealing Technology
Published in Japanese Journal of Applied Physics (01-04-2005)“…A new low temperature process that can be used to fabricate a strained silicon-on insulator (SOI) using an excimer-laser-irradiated relaxation technique is…”
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Analysis of Drivability Enhancement Factors in Nanograting Metal–Oxide–Semiconductor Field-Effect Transistors
Published in Japanese Journal of Applied Physics (01-04-2008)Get full text
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Efficient Reduction of Standby Leakage Current in LSIs for Use in Mobile Devices
Published in Japanese Journal of Applied Physics (01-04-2006)Get full text
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14‐3: High‐Performance Organic‐TFT Circuits Fabricated by All‐Printing Technology on Flexible Plastic Substrates
Published in SID International Symposium Digest of technical papers (01-05-2017)“…We demonstrate the feasibility of fabricating all‐printed organic TFT circuits by high precision alignment technology on flexible plastic substrates. The ring…”
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The effects of laser annealing ambient and the number of laser shots on the morphology of poly-si films
Published in Electronics & communications in Japan. Part 2, Electronics (01-07-2003)“…We have examined the effects of the laser annealing ambient and the number of laser shots on the morphology and the grain size of excimer laser‐annealed…”
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Formation of HfSiON/SiO2/Si-substrate gate stack with low leakage current for high-performance high-κ misfets
Published in IEEE transactions on electron devices (01-04-2006)Get full text
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Silicon Thin-Film Formation by Direct Photochemical Decomposition of Disilane
Published in Japanese Journal of Applied Physics (01-01-1983)“…Silicon thin-films have been deposited by the direct photolysis of disilane at a substrate temperature below 300°C. The growth rate depends on irradiation…”
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Hydrogenated amorphous silicon produced by pyrolysis of disilane in a hot wall reactor
Published in Japanese Journal of Applied Physics (01-01-1984)“…Deposition kinetics and physical properties of hydrogenated amorphous silicon produced by low-pressure chemical vapor deposition of disilane have been…”
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Internal Photoemission in a-Si:H Schottky-Barrier and MOS Structures
Published in Japanese Journal of Applied Physics (01-01-1981)“…Internal photoemission of metal/a-Si: H and metal/SiO 2 /a-Si:H systems have been measured in the temperature range 86 to 300 K. The height of the potential…”
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Current Transport Mechanism of Hydrogenated Amorphous Silicon Schottky Barrier Diodes
Published in Japanese Journal of Applied Physics (01-01-1981)“…We report detailed studies on the forward current-voltage characteristics of Pd/a-Si:H Schottky barrier diodes. Exact values of the barrier height and its…”
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Nucleation of Microcrystallites in Phosphorus-Doped Si:H Films
Published in Japanese Journal of Applied Physics (01-01-1981)“…Structural properties of partially crystallized Si:H films prepared by glow discharge technique have been studied by Raman scattering and optical absorption…”
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Strained-silicon formation on relaxed silicon-germanium/silicon-on-insulator substrate using laser annealing
Published in Applied physics letters (14-02-2005)“…We propose a low-temperature process to fabricate strained silicon on silicon-germanium (SiGe)/silicon-on-insulator (SOI) substrates using excimer laser…”
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Improved lifetime of poly-Si TFTs with a self-aligned gate-overlapped LDD structure
Published in IEEE transactions on electron devices (01-06-2002)“…We investigated the lifetimes for various poly-Si thin film transistor (TFT) structures. A gate-overlapped lightly doped drain (GOLDD) structure was…”
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Thin organic photoconductive film image sensors with extremely high saturation of 8500 electrons/µm2
Published in 2013 Symposium on VLSI Technology (01-06-2013)“…We have developed an image sensor with thin organic photoconductive film (OPF) laminated on CMOS circuits. Owing to high capacity of a charge storage node, the…”
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Characteristics of aluminum substitution technology for self-aligned full metal gate nMOSFETs
Published in IEEE transactions on electron devices (01-05-2005)“…We investigated self-aligned metal gate MOSFETs that feature an ideal low-resistance aluminum gate using aluminum substitution technology (AST). This…”
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P-3: The Effect of a Laser Annealing Ambient on the Morphology and TFT Performance of Poly-Si Films
Published in SID International Symposium Digest of technical papers (01-05-2000)“…We have examined the effect of a laser annealing ambient on the morphology and TFT performance of poly‐Si films. Oxygen in the ambient prevents the relaxation…”
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Ultra-thin strained Si on insulator substrate using laser annealing
Published in 2005 IEEE International SOI Conference Proceedings (2005)“…We describe a low-temperature process for fabricating strained silicon on insulator (SOI) substrates using excimer laser annealing technology. We used an…”
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Thin organic photoconductive film image sensors with extremely high saturation of 8500 electrons/µm2
Published in 2013 Symposium on VLSI Circuits (01-06-2013)“…We have developed an image sensor with thin organic photoconductive film (OPF) laminated on CMOS circuits. Owing to high capacity of a charge storage node, the…”
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Conference Proceeding