Search Results - "MINSKY, M. S"

Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures by Chichibu, S. F., Abare, A. C., Minsky, M. S., Keller, S., Fleischer, S. B., Bowers, J. E., Hu, E., Mishra, U. K., Coldren, L. A., DenBaars, S. P., Sota, T.

“…The emission mechanisms of strained InxGa1−xN quantum wells (QWs) were shown to vary depending on the well thickness, L, and x. The absorption edge was…”
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Room-temperature photoenhanced wet etching of GaN by Minsky, M. S., White, M., Hu, E. L.

“…Laser-enhanced, room-temperature wet etching of GaN using either dilute HCl:H2O (1:10) or 45% KOH:H2O(1:3) is reported. Etch rates of a few hundred Å/min (HCl)…”
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Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth by Chichibu, S. F., Marchand, H., Minsky, M. S., Keller, S., Fini, P. T., Ibbetson, J. P., Fleischer, S. B., Speck, J. S., Bowers, J. E., Hu, E., Mishra, U. K., DenBaars, S. P., Deguchi, T., Sota, T., Nakamura, S.

“…The emission mechanisms of bulk GaN and InGaN quantum wells (QWs) were studied by comparing their optical properties as a function of threading dislocation…”
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Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells by Cho, Yong-Hoon, Song, J. J., Keller, S., Minsky, M. S., Hu, E., Mishra, U. K., DenBaars, S. P.

“…We have systematically studied the influence of Si doping on the characteristics of InGaN/GaN multiple quantum wells (MQWs) by means of high-resolution x-ray…”
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Optical properties of InGaN quantum wells by Chichibu, S.F, Abare, A.C, Mack, M.P, Minsky, M.S, Deguchi, T, Cohen, D, Kozodoy, P, Fleischer, S.B, Keller, S, Speck, J.S, Bowers, J.E, Hu, E, Mishra, U.K, Coldren, L.A, DenBaars, S.P, Wada, K, Sota, T, Nakamura, S

“…The emission mechanisms of strained InGaN quantum wells (QWs) were shown to vary depending on the well thickness L and InN molar fraction x. The QW resonance…”
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Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells by Keller, S., Chichibu, S.F., Minsky, M.S., Hu, E., Mishra, U.K., DenBaars, S.P.

“…InGaN/GaN single and multi quantum wells have been grown by metal-organic chemical vapor deposition, varying the growth rate of well and barrier layers as well…”
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Radiative recombination lifetime measurements of InGaN single quantum well by Sun, C.-K., Keller, S., Wang, G., Minsky, M. S., Bowers, J. E., DenBaars, S. P.

“…We present results from a time-resolved study of radiative recombination in InGaN quantum wells. The sample was grown by atmospheric pressure metal-organic…”
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Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature by Sun, C.-K., Chiu, T.-L., Keller, S., Wang, G., Minsky, M. S., DenBaars, S. P., Bowers, J. E.

“…We present a room-temperature study of the well-width-dependent carrier lifetimes in InGaN single-quantum wells. At room temperature, carrier recombination was…”
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Photoluminescence Excitation Spectroscopy of InxGa1-xN/GaN Multiple Quantum Wells with Various In Compositions by Sasaki, C., Iwata, M., Yamada, Y., Taguchi, T., Watanabe, S., Minsky, M.S., Takeuchi, T., Yamada, N.

“…Luminescence properties of InxGa1—xN/GaN multiple quantum wells (MQWs) with various In compositions have been studied by means of photoluminescence excitation…”
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Photoluminescence excitation spectroscopy yields band gap of Ga0.5In0.5P containing relatively ordered domains by FOUQUET, J. E, MINSKY, M. S, ROSNER, S. J

“…Photoluminescence excitation spectroscopy at 9 K reveals that the absorption edge of Ga0.5In0.5P containing relatively ordered domains (grown at 670 °C) is…”
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Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence by Minsky, M. S., Fleischer, S. B., Abare, A. C., Bowers, J. E., Hu, E. L., Keller, S., Denbaars, S. P.

“…Recombination in single quantum well and multiquantum well InGaN/GaN structures is studied using time-resolved photoluminescence and pulsed photoluminescence…”
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Well-width dependent studies of InGaN-GaN single-quantum wells using time-resolved photoluminescence techniques by Chi-Kuang Sun, Keller, S., Tien-Lung Chiu, Wang, G., Minsky, M.S., Bowers, J.E., DenBaars, S.P.

“…We present a well-width-dependent study of InGaN-GaN single-quantum wells using a time-resolved photoluminescence (PL) technique. At room temperature (RT),…”
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Characterization of atherosclerotic plaques by laser speckle imaging by NADKARNI, Seemantini K, BOUMA, Brett E, HELG, Tina, CHAN, Raymond, HALPERN, Elkan, CHAU, Alexandra, SINGH MINSKY, Milan, MOTZ, Jason T, HOUSER, Stuart L, TEARNEY, Guillermo J

“…A method capable of determining atherosclerotic plaque composition and measuring plaque viscoelasticity can provide valuable insight into intrinsic features…”
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Growth and properties of InGaN nanoscale islands on GaN by KELLER, S, KELLER, B. P, MINSKY, M. S, BOWERS, J. E, MISHRA, U. K, BAARS, S. P. D, SEIFERT, W

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Growth and properties of InGaN nanoscale islands on GaN by Keller, Stacia, Keller, Bernd P, S. Minsky, Milan, Bowers, John E, Mishra, Umesh K, DenBaars, Steven P, Seifert, Werner

“…Strong photoluminescence and radiative recombination lifetimes longer than 1ns at room temperature have been observed in GaN/Si/InGaN/GaN structures containing…”
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Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers by Minsky, Milan S., Chichibu, Shigefusa, Fleischer, Siegfried B., Abare, Amber C., Bowers, John E., Hu, Evelyn L., Keller, Stacia, Mishra, Umesh K., DenBaars, Steven P.

“…Optical properties of InGaN/GaN multi-quantum wells with Si doped barriers are studied using cw and time resolved photoluminescence (TRPL) and…”
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Anomalous pressure dependence of emission in Si-doped InGaN/GaN quantum wells by Patel, D., Vaschenko, G., Menoni, C.S., Minsky, M.S., Keller, S., Hu, E., Mishra, U.K., DenBaars, S.P.

“…Summary form only given.It has been shown theoretically and experimentally that the built-in strain in semiconductor heterostructures can be tuned with…”
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Time-resolved Electroluminescence Of GaAsP Light-emitting Diodes by Fouquet, J.E., Saxena, R.R., Pont, L.O., Kao, T.M., Minsky, M.S.

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