Search Results - "MIKHELASHVILI, V"

Static and dynamic characteristics of an InAs/InP quantum-dot optical amplifier operating at high temperatures by Eyal, O, Willinger, A, Banyoudeh, S, Schanbel, F, Sichkovskyi, V, Mikhelashvili, V, Reithmaier, J P, Eisenstein, G

“…We report on high quality InAs/InP quantum dot optical amplifiers for the 1550 nm wavelength range operating over a wide temperature range of 25 to 100 °C. A…”
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Negative differential resistance in three terminal photodetectors by Mikhelashvili, V., Meyler, B., Yofis, S., Padmanabhan, R., Eisenstein, G.

“…A three terminal (transistor-like) photodetector fabricated on a silicon-on-insulator substrate with a high responsivity over a wide spectral range from…”
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Comparison of dynamic properties of ground- and excited-state emission in p-doped InAs/GaAs quantum-dot lasers by Arsenijević, D., Schliwa, A., Schmeckebier, H., Stubenrauch, M., Spiegelberg, M., Bimberg, D., Mikhelashvili, V., Eisenstein, G.

“…The dynamic properties of ground- and excited-state emission in InAs/GaAs quantum-dot lasers operating close to 1.31 μm are studied systematically. Under low…”
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Carrier dynamics in inhomogeneously broadened InAs/AlGaInAs/InP quantum-dot semiconductor optical amplifiers by Karni, O., Kuchar, K. J., Capua, A., Mikhelashvili, V., Sęk, G., Misiewicz, J., Ivanov, V., Reithmaier, J. P., Eisenstein, G.

“…We report on a characterization of fundamental gain dynamics in recently developed InAs/InP quantum-dot semiconductor optical amplifiers. Multi-wavelength…”
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Direct correlation between a highly damped modulation response and ultra low relative intensity noise in an InAs/GaAs quantum dot laser by Capua, A, Rozenfeld, L, Mikhelashvili, V, Eisenstein, G, Kuntz, M, Laemmlin, M, Bimberg, D

“…We describe modulation responses and relative intensity noise (RIN) spectra of an InAs/GaAs quantum dot laser operating near 1300 nm. A very large nonlinear…”
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Stability of quantum-dot excited-state laser emission under simultaneous ground-state perturbation by Kaptan, Y., Röhm, A., Herzog, B., Lingnau, B., Schmeckebier, H., Arsenijević, D., Mikhelashvili, V., Schöps, O., Kolarczik, M., Eisenstein, G., Bimberg, D., Woggon, U., Owschimikow, N., Lüdge, K.

“…The impact of ground state amplification on the laser emission of In(Ga)As quantum dot excited state lasers is studied in time-resolved experiments. We find…”
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Composition, surface morphology and electrical characteristics of Al2O3-TiO2 nanolaminates and AlTiO films on silicon by MIKHELASHVILI, V, EISENSTEIN, G

“…We propose and demonstrate Metal-Oxide-Semiconductor structures comprising Al2O3-TiO2 nanolaminate and AlTiO films. Composition, structural and electrical…”
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Gain dynamics of quantum dot devices for dual-state operation by Kaptan, Y., Schmeckebier, H., Herzog, B., Arsenijević, D., Kolarczik, M., Mikhelashvili, V., Owschimikow, N., Eisenstein, G., Bimberg, D., Woggon, U.

“…Ground state gain dynamics of In(Ga)As-quantum dot excited state lasers are investigated via single-color ultrafast pump-probe spectroscopy below and above…”
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Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots by Khanonkin, I., Mishra, A. K., Karni, O., Mikhelashvili, V., Banyoudeh, S., Schnabel, F., Sichkovskyi, V., Reithmaier, J. P., Eisenstein, G.

“…The charge carrier dynamics of improved InP-based InAs/AlGaInAs quantum dot (QD) semiconductor optical amplifiers are examined employing the multi-wavelength…”
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The influence of electron-beam irradiation on electrical characteristics of metal–insulator–semiconductor capacitors based on a high- k dielectric stack of HfTiSiO(N) and HfTiO(N) layers by Thangadurai, P., Kaplan, W.D., Mikhelashvili, V., Eisenstein, G.

“…We describe the influence of electron irradiation (at 30 kV with a dose of up to 100 μC/cm 2) on the electrical characteristics of…”
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Electrical properties of Al2O3-HfTiO laminate gate dielectric stacks with an equivalent oxide thickness below 0.8 nm by MIKHELASHVILI, V, EISENSTEIN, G

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The correlation of the electrical properties with electron irradiation and constant voltage stress for MIS devices based on high- k double layer (HfTiSiO:N and HfTiO:N) dielectrics by Mikhelashvili, V., Thangadurai, P., Kaplan, W.D., Eisenstein, G.

“…This paper describes the influence of e-beam irradiation and constant voltage stress on the electrical characteristics of metal–insulator–semiconductor…”
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Structural properties and electrical characteristics of electron-beam gun evaporated erbium oxide films by Mikhelashvili, V., Eisenstein, G., Edelmann, F.

“…We report properties of Er2O3 films deposited on silicon using electron-beam gun evaporation. We describe the evolution with thickness and annealing…”
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High-κ Al2O3-HfTiO nanolaminates with less than 0.8-nm equivalent oxide thickness by MIKHELASHVILI, V, EISENSTEIN, G

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Microstructure and chemical analysis of Hf-based high-k dielectric layers in metal–insulator–metal capacitors by Thangadurai, P., Mikhelashvili, V., Eisenstein, G., Kaplan, W.D.

“…The microstructure and chemistry of the high-k gate dielectric significantly influences the performance of metal–insulator–metal (MIM) and…”
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Cross talk free multi channel processing of 10 Gbit/s data via four wave mixing in a 1550 nm InAs/InP quantum dash amplifier by Capua, A, O'Duill, S, Mikhelashvili, V, Eisenstein, G, Reithmaier, J P, Somers, A, Forchel, A

“…We demonstrate multi wavelength processing in a broad band 1550 nm quantum dash optical amplifier. Two 10 Gbit/s signals, spectrally separated by 30 nm are…”
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Characteristics of Al2O3/TiO2 nanolaminates and AlTiO thin films on Si by MIKHELASHVILI, V, GARSHTEIN, E, EISENSTEIN, G

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Characteristics of metal-insulator-semiconductor capacitors based on high-k HfAlO dielectric films obtained by low-temperature electron-beam gun evaporation by Mikhelashvili, V., Brener, R., Kreinin, O., Meyler, B., Shneider, J., Eisenstein, G.

“…We describe the characteristics of thin HfAlO films deposited at low temperature by electron beam gun evaporation. As-deposited films thinner than 6 nm exhibit…”
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Composition and electrical characteristics of Al2O3-HfO2-HfTiO nanolaminates on Si by MIKHELASHVILI, V, LAHAV, A, BRENER, R, EISENSTEIN, G

“…A dielectric constant of 27 was demonstrated in the as deposited state of a 5 nm thick, seven layer nanolaminate stack comprising Al2O3, HfO2 and HfTiO. It…”
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The effect of light irradiation on electrons and holes trapping in nonvolotile memory capacitors employing sub 10 nm SiO2―HfO2 stacks and Au nanocrystals by MIKHELASHVILI, V, MEYLER, B, GARBRECHT, M, COHEN-HYAMS, T, ROIZIN, Y, LISIANSKY, M, KAPLAN, W. D, SALZMAN, Y, EISENSTEIN, G

“…We demonstrate the possibility to control charge trapping in the memory stacks comprised of metal nanocrystals (NCs) sandwiched between SiO2 and high-k…”
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