Search Results - "MEYNADIER, M. H"

Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Gamma -X mixing by Meynadier, M, Nahory, RE, Worlock, JM, Tamargo, MC, de Miguel JL, Sturge, MD

“…It is demonstrated that a GaAs-AlAs superlattice can be switched from indirect to direct, in both real and reciprocal spaces, by application of a modest axial…”
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Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures by Tabatabaie, N., Meynadier, M.-H., Nahory, R. E., Harbison, J. P., Florez, L. T.

“…We describe a large lateral photovoltage that develops in AlGaAs/GaAs modulation-doped structures in response to excitation by spot illumination. The effect is…”
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Optical investigations of the band structure of strained InAs/AlInAs quantum wells by MEYNADIER, M.-H, DE MIGUEL, J.-L, TAMARGO, M. C, NAHORY, R. E

“…We report photoluminescence and photoconductivity measurements on single InAs quantum wells under a 3.4% biaxial compression. The photoluminescence line, which…”
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Low-temperature exciton trapping on interface defects in semiconductor quantum wells by BASTARD, G, DELALANDE, C, MEYNADIER, M. H, FRIJLINK, P. M, VOOS, M

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InAs strained-layer quantum wells with band gaps in the 1.2–1.6 μm wavelength range by de Miguel, J. L., Tamargo, M. C., Meynadier, M.-H., Nahory, R. E., Hwang, D. M.

“…Strained In0.52Al0.48As/InAs single quantum wells have been grown by molecular beam epitaxy on InP substrates and their structural quality and commensurability…”
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Effect of temperature on exciton trapping on interface defects in GaAs quantum wells by DELALANDE, C, MEYNADIER, M. H, VOOS, M

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Ga1-xInxAs-InP abrupt heterostructures grown by MOVPE AT ATMOSPHERIC PRESSURE by ANDRE, J. P, MENU, E. P, ERMAN, M, MEYNADIER, M. H, NGO, T

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Regrowth on molecular‐beam epitaxial layers by transferring in ultrahigh vacuum between growth chambers: An assessment of the interface quality by de Miguel, J. L., Meynadier, M.‐H., Tamargo, M. C.

“…The effect of transferring in ultrahigh vacuum conditions between molecular‐beam epitaxy chambers on the quality of regrown interfaces is addressed. In…”
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Size quantization and band-offset determination in GaAs-GaAlAs separate confinement heterostructures by MEYNADIER, M. H, DELALANDE, C, BASTARD, G, VOOS, M, ALEXANDRE, F, LIEVIN, J. L

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High-order resonant Raman scattering by combinations and overtones of interface phonons in GaAs-AlAs short-period superlattices by MEYNADIER, M. H, FINKMAN, E, STURGE, M. D, WORLOCK, J. M, TAMARGO, M. C

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Molecular‐beam epitaxial growth and characterization of pseudomorphic InAs/In0.52Al0.48 As quantum wells by de Miguel, J. L., Meynadier, M.‐H., Tamargo, M. C., Nahory, R. E., Hwang, D. M.

“…The evolution of the structural and optical quality of molecular‐beam epitaxial (MBE) grown InAs/In0.52Al0.48As pseudomorphic quantum wells with increasing…”
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Spectroscopy of a high-mobility GaAs-Ga1-xAlxAs one-side-modulation-doped quantum well by Meynadier, MH, Orgonasi, J, Delalande, C, Brum, JA, Bastard, G, Voos, M, Weimann, G, Schlapp, W

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Large lateral photovoltaic effect in modulation doped AlGa As/GaAs heterostructures by TABATABAIE, N, MEYNADIER, M.-H, NAHORY, R. E, HARBISON, J. P, FLOREZ, L. T

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InAs strained-layer quantum wells with band gaps in the 1.2-1.6 υm wavelength range by DE MIGUEL, J. L, TAMARGO, M. C, MEYNADIER, M.-H, NAHORY, R. E, HWANG, D. M

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Spectroscopy of a high-mobility GaAs- Ga 1 − x Al x As one-side-modulation-doped quantum well by Meynadier, M. H., Orgonasi, J., Delalande, C., Brum, J. A., Bastard, G., Voos, M., Weimann, G., Schlapp, W.

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