Search Results - "MERZ, L. J"

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  1. 1

    Quantum-memory effects in the emission of quantum-dot microcavities by Berger, C, Huttner, U, Mootz, M, Kira, M, Koch, S W, Tempel, J-S, Aßmann, M, Bayer, M, Mintairov, A M, Merz, J L

    Published in Physical review letters (29-08-2014)
    “…The experimentally measured input-output characteristics of optically pumped semiconductor microcavities exhibits unexpected oscillations modifying the…”
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    Journal Article
  2. 2

    Surface photovoltage and modulation spectroscopy of E_ and E+ transitions in GaNAs layers by KUDRAWIEC, R, SITAREK, P, YU, K.-M, WALUKIEWICZ, W, GLADYSIEWICZ, M, MISIEWICZ, J, HE, Y, JIN, Y, VARDAR, G, MINTAROV, A. M, MERZ, J. L, GOLDMAN, R. S

    Published in Thin solid films (01-09-2014)
    “…Surface photovoltage (SPV) spectra were measured for GaN0.014As0.986 layers at room temperature and compared with room temperature photoreflectance (PR) and…”
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    Journal Article
  3. 3

    Near-field magnetophotoluminescence spectroscopy of composition fluctuations in InGaAsN by Mintairov, A M, Kosel, T H, Merz, J L, Blagnov, P A, Vlasov, A S, Ustinov, V M, Cook, R E

    Published in Physical review letters (31-12-2001)
    “…The localization of excitons on quantum-dot-like compositional fluctuations has been observed in temperature-dependent near-field magnetophotoluminescence…”
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    Journal Article
  4. 4

    Formation of self-assembling CdSe quantum dots on ZnSe by molecular beam epitaxy by Xin, S. H., Wang, P. D., Yin, Aie, Kim, C., Dobrowolska, M., Merz, J. L., Furdyna, J. K.

    Published in Applied physics letters (16-12-1996)
    “…We report the formation of self-assembling CdSe quantum dots during molecular beam epitaxial growth on ZnSe and ZnMnSe. Atomic force microscopy measurements on…”
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    Journal Article
  5. 5

    Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots by Fafard, S., Leonard, D., Merz, J. L., Petroff, P. M.

    Published in Applied physics letters (12-09-1994)
    “…The energy levels of nanometer size InGaAs quantum dots epitaxially grown on GaAs by the coherent islanding effect are probed using selectively excited…”
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  6. 6

    Visible luminescence from semiconductor quantum dots in large ensembles by Leon, R., Fafard, S., Leonard, D., Merz, J. L., Petroff, P. M.

    Published in Applied physics letters (24-07-1995)
    “…Visible luminescence has been obtained from ensembles of defect-free, InxAl(1−x)As islands of ultrasmall dimensions embedded in AlyGa(1−y)As cladding layers…”
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    Journal Article
  7. 7

    Self-Assembled CdTe Quantum Dots Grown on ZnTe/GaSb by Pimpinella, R. E., Liu, X., Furdyna, J. K., Dobrowolska, M., Mintairov, A. M., Merz, J. L.

    Published in Journal of electronic materials (01-07-2010)
    “…We report the formation of CdTe self-assembled quantum dots (QDs) on high-quality ZnTe epilayers grown on a GaSb substrate by molecular-beam epitaxy…”
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    Journal Article Conference Proceeding
  8. 8

    Time-resolved optical characterization of InGaAs/GaAs quantum dots by Wang, G., Fafard, S., Leonard, D., Bowers, J. E., Merz, J. L., Petroff, P. M.

    Published in Applied physics letters (23-05-1994)
    “…We report on the optical characterization of the strained InGaAs/GaAs quantum dots (QDs). The temperature dependence of the photoluminescence (PL) indicates…”
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    Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk by Lebedev, D. V., Kulagina, M. M., Troshkov, S. I., Vlasov, A. S., Davydov, V. Y., Smirnov, A. N., Bogdanov, A. A., Merz, J. L., Kapaldo, J., Gocalinska, A., Juska, G., Moroni, S. T., Pelucchi, E., Barettin, D., Rouvimov, S., Mintairov, A. M.

    Published in Applied physics letters (20-03-2017)
    “…Formation, emission, and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using…”
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    Journal Article
  12. 12

    Temperature effects on the radiative recombination in self-assembled quantum dots by Fafard, S., Raymond, S., Wang, G., Leon, R., Leonard, D., Charbonneau, S., Merz, J.L., Petroff, P.M., Bowers, J.E.

    Published in Surface science (20-07-1996)
    “…Several ensembles of self-assembled quantum dots (QDs) based on the AlInAsAl/GaAs and InGaAs/GaAs material systems have been investigated using…”
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    Journal Article
  13. 13

    Wigner Localization and Whispering Gallery Modes of Electrons in Quantum Dots by Mintairov, A. M., Merz, J. L., Kapaldo, J., Vlasov, A. S., Blundell, S. A.

    Published in Semiconductors (Woodbury, N.Y.) (01-04-2018)
    “…We used a low temperature near-field scanning optical microscopy (NSOM) to study a formation of Wigner molecules (WMs) in the emission spectra of…”
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    Journal Article
  14. 14

    Influence of N interstitials on the electronic properties of GaAsN alloys by Jin, Y., Jock, R. M., Cheng, H., He, Y., Mintarov, A. M., Wang, Y., Kurdak, C., Merz, J. L., Goldman, R. S.

    Published in Applied physics letters (10-08-2009)
    “…We have used rapid thermal annealing to investigate the influence of N interstitials on the electronic properties of GaAsN alloys. Nuclear reaction analysis…”
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    Journal Article
  15. 15

    Local optical spectroscopy of self-assembled quantum dots using a near-field optical fiber probe to induce a localized strain field by Robinson, H. D., Müller, M. G., Goldberg, B. B., Merz, J. L.

    Published in Applied physics letters (27-04-1998)
    “…We introduce and demonstrate a novel operating mode in near-field optical microscopy. The tip is used to simultaneously optically probe the sample and induce a…”
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    Journal Article
  16. 16

    Order–disorder transition in epitaxial ZnSnP2 by Seryogin, G. A., Nikishin, S. A., Temkin, H., Mintairov, A. M., Merz, J. L., Holtz, M.

    Published in Applied physics letters (12-04-1999)
    “…We report on the growth of ZnSnP2 on GaAs(100) substrates by gas source molecular beam epitaxy. Samples were grown in the temperature range of 300–360 °C. A…”
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    Journal Article
  17. 17

    Spectroscopic characterization of the evolution of self-assembled CdSe quantum dots by Kim, J. C., Rho, H., Smith, L. M., Jackson, Howard E., Lee, S., Dobrowolska, M., Merz, J. L., Furdyna, J. K.

    Published in Applied physics letters (07-12-1998)
    “…We have investigated the evolution of molecular beam epitaxy (MBE)-grown, CdSe self-assembled quantum dots on ZnSe surfaces using microphotoluminescence…”
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  18. 18

    Exciton droplets in zero dimensional systems in a magnetic field by Raymond, S., Hawrylak, P., Gould, C., Fafard, S., Sachrajda, A., Potemski, M., Wojs, A., Charbonneau, S., Leonard, D., Petroff, P.M., Merz, J.L.

    Published in Solid state communications (01-03-1997)
    “…The emission spectrum of self-assembled InGaAs/GaAs quantum dots filled with up to 10 excitions is measured in magnetic fields up to 13 Tesla. The spectrum…”
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    Journal Article
  19. 19

    Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures by Lebedev, D. V., Mintairov, A. M., Vlasov, A. S., Davydov, V. Yu, Kulagina, M. M., Troshkov, S. I., Bogdanov, A. A., Smirnov, A. N., Gocalinska, A., Juska, G., Pelucchi, E., Kapaldo, J., Rouvimov, S., Merz, J. L.

    Published in Technical physics (01-07-2017)
    “…The emissivity of unstrained quantum-dimensional InP/AlInAs nanostructures and their lasing properties in microdisk cavities prepared by wet etching have been…”
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    Journal Article
  20. 20

    Temporal cross-section for carrier capture by self-assembled quantum dots by Raymond, S., Fafard, S., Hinzer, K., Charbonneau, S., Merz, J.L.

    Published in Microelectronic engineering (01-06-2000)
    “…Time-resolved studies of the wetting layer photoluminescence is combined with state-filling spectroscopy of the quantum dot emission to obtain carrier transfer…”
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    Journal Article Conference Proceeding