Search Results - "MERZ, L. J"
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1
Quantum-memory effects in the emission of quantum-dot microcavities
Published in Physical review letters (29-08-2014)“…The experimentally measured input-output characteristics of optically pumped semiconductor microcavities exhibits unexpected oscillations modifying the…”
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2
Surface photovoltage and modulation spectroscopy of E_ and E+ transitions in GaNAs layers
Published in Thin solid films (01-09-2014)“…Surface photovoltage (SPV) spectra were measured for GaN0.014As0.986 layers at room temperature and compared with room temperature photoreflectance (PR) and…”
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3
Near-field magnetophotoluminescence spectroscopy of composition fluctuations in InGaAsN
Published in Physical review letters (31-12-2001)“…The localization of excitons on quantum-dot-like compositional fluctuations has been observed in temperature-dependent near-field magnetophotoluminescence…”
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4
Formation of self-assembling CdSe quantum dots on ZnSe by molecular beam epitaxy
Published in Applied physics letters (16-12-1996)“…We report the formation of self-assembling CdSe quantum dots during molecular beam epitaxial growth on ZnSe and ZnMnSe. Atomic force microscopy measurements on…”
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5
Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots
Published in Applied physics letters (12-09-1994)“…The energy levels of nanometer size InGaAs quantum dots epitaxially grown on GaAs by the coherent islanding effect are probed using selectively excited…”
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6
Visible luminescence from semiconductor quantum dots in large ensembles
Published in Applied physics letters (24-07-1995)“…Visible luminescence has been obtained from ensembles of defect-free, InxAl(1−x)As islands of ultrasmall dimensions embedded in AlyGa(1−y)As cladding layers…”
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7
Self-Assembled CdTe Quantum Dots Grown on ZnTe/GaSb
Published in Journal of electronic materials (01-07-2010)“…We report the formation of CdTe self-assembled quantum dots (QDs) on high-quality ZnTe epilayers grown on a GaSb substrate by molecular-beam epitaxy…”
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8
Time-resolved optical characterization of InGaAs/GaAs quantum dots
Published in Applied physics letters (23-05-1994)“…We report on the optical characterization of the strained InGaAs/GaAs quantum dots (QDs). The temperature dependence of the photoluminescence (PL) indicates…”
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9
Nanoindentation and near-field spectroscopy of single semiconductor quantum dots
Published in Physical review. B, Condensed matter and materials physics (01-04-2004)Get full text
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10
Dynamics of Ripening of Self-Assembled II-VI Semiconductor Quantum Dots
Published in Physical review letters (19-10-1998)Get full text
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11
Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk
Published in Applied physics letters (20-03-2017)“…Formation, emission, and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using…”
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12
Temperature effects on the radiative recombination in self-assembled quantum dots
Published in Surface science (20-07-1996)“…Several ensembles of self-assembled quantum dots (QDs) based on the AlInAsAl/GaAs and InGaAs/GaAs material systems have been investigated using…”
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13
Wigner Localization and Whispering Gallery Modes of Electrons in Quantum Dots
Published in Semiconductors (Woodbury, N.Y.) (01-04-2018)“…We used a low temperature near-field scanning optical microscopy (NSOM) to study a formation of Wigner molecules (WMs) in the emission spectra of…”
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14
Influence of N interstitials on the electronic properties of GaAsN alloys
Published in Applied physics letters (10-08-2009)“…We have used rapid thermal annealing to investigate the influence of N interstitials on the electronic properties of GaAsN alloys. Nuclear reaction analysis…”
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15
Local optical spectroscopy of self-assembled quantum dots using a near-field optical fiber probe to induce a localized strain field
Published in Applied physics letters (27-04-1998)“…We introduce and demonstrate a novel operating mode in near-field optical microscopy. The tip is used to simultaneously optically probe the sample and induce a…”
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16
Order–disorder transition in epitaxial ZnSnP2
Published in Applied physics letters (12-04-1999)“…We report on the growth of ZnSnP2 on GaAs(100) substrates by gas source molecular beam epitaxy. Samples were grown in the temperature range of 300–360 °C. A…”
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17
Spectroscopic characterization of the evolution of self-assembled CdSe quantum dots
Published in Applied physics letters (07-12-1998)“…We have investigated the evolution of molecular beam epitaxy (MBE)-grown, CdSe self-assembled quantum dots on ZnSe surfaces using microphotoluminescence…”
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18
Exciton droplets in zero dimensional systems in a magnetic field
Published in Solid state communications (01-03-1997)“…The emission spectrum of self-assembled InGaAs/GaAs quantum dots filled with up to 10 excitions is measured in magnetic fields up to 13 Tesla. The spectrum…”
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19
Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures
Published in Technical physics (01-07-2017)“…The emissivity of unstrained quantum-dimensional InP/AlInAs nanostructures and their lasing properties in microdisk cavities prepared by wet etching have been…”
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20
Temporal cross-section for carrier capture by self-assembled quantum dots
Published in Microelectronic engineering (01-06-2000)“…Time-resolved studies of the wetting layer photoluminescence is combined with state-filling spectroscopy of the quantum dot emission to obtain carrier transfer…”
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Journal Article Conference Proceeding