Search Results - "MEFTAH, Af"

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  1. 1

    Performance Study of the Micromorph Silicon Tandem Solar Cell Using Silvaco TCAD Simulator by Bouhdjar, A. F., Adaika, M., Meftah, Am, Boumaraf, R., Meftah, Af, Sengouga, N.

    “…This paper is concerned with the numerical modelling of a micromorph silicon tandem solar cell (a-Si:H/µc-Si:H), under series (two-terminal: 2T) and…”
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    Journal Article
  2. 2

    Numerical simulation of bias and photo stress on indium–gallium–zinc-oxide thin film transistors by Adaika, M., Meftah, Af, Sengouga, N., Henini, M.

    Published in Vacuum (01-10-2015)
    “…Thin Film Transistors based on amorphous Indium–Gallium–Zinc-Oxide (a-IGZO TFT) are receiving a great deal of attention for their numerous applications as…”
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    Journal Article
  3. 3
  4. 4

    Numerical simulation of the response of substrate traps to a voltage applied to the gate of a gallium arsenide field effect transistor by Sengouga, N., Meftah, Af, Meftah, Am, Henini, M.

    “…We report on a numerical simulation of the response of substrate traps to a voltage applied to the gate of a gallium arsenide field effect transistor (GaAs…”
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    The Al x Ga 1− x As window composition effect on the hardness improvement of a p +–n–n +GaAs solar cell exposed to the electron irradiation by Meftah, AF, Meftah, AM, Sengouga, N., Khelifi, S.

    Published in Energy conversion and management (2010)
    “…Numerical simulation was used to study the Al x Ga 1− x As window composition effect on the current–voltage characteristics of a p +–n–n +GaAs solar cell under…”
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    Journal Article
  7. 7

    Irradiation effect on the electrical characteristics of an AlGaAs/GaAs based solar cell: Comparison between electron and proton irradiation by numerical simulation by Laiadi, W., Meftah, Af, Sengouga, N., Meftah, Am

    Published in Superlattices and microstructures (01-06-2013)
    “…•Electron and proton irradiation of solar cells have comparable effects on the solar cell efficiency.•They have different effects on the short circuit current…”
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  8. 8

    Created defect under illumination in a-Si:H: hydrogenated or isolated dangling bond ? by Meftah, AF, Meftah, AM, Merazga, A.

    Published in Vacuum (26-07-2004)
    “…The present paper deals with dangling bonds creation in a-Si:H thin films under continuous light illumination with moderate intensity. Taking into account the…”
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  9. 9

    Deep traps and temperature effects on the capacitance of p-type Si-doped GaAs Schottky diodes on (211) and (311) oriented GaAs substrates by Boumaraf, R., Sengouga, N., Mari, R.H., Meftah, Af, Aziz, M., Jameel, Dler, Al Saqri, Noor, Taylor, D., Henini, M.

    Published in Superlattices and microstructures (01-01-2014)
    “…•Two Si-doped p-type GaAs on (N11) SI-GaAs Schottky diodes fabricated by MBE. N=1, 2.•C–V characteristics of the two diodes were measured at different…”
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  10. 10

    Prediction of the performance degradation of GaAs solar cells by electron irradiation by Meftah, Afek, Sengouga, Noureddine, Meftah, Amjad

    Published in Revue des énergies renouvelables (31-12-2008)
    “…Solar cells exposed to irradiation undergo severe degradation in their performance due to induced structural defects. To predict this effect, the…”
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