Search Results - "MCCALL, S. L"
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Whispering-gallery mode microdisk lasers
Published in Applied physics letters (20-01-1992)“…A new microlaser design based on the high-reflectivity whispering-gallery modes around the edge of a thin semiconductor microdisk is described and initial…”
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2
Threshold characteristics of semiconductor microdisk lasers
Published in Applied physics letters (06-09-1993)“…This letter describes the threshold characteristics of InGaAs/InGaAsP microdisk lasers with optical emission near a wavelength λ=1.52 μm. More than 5% of the…”
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3
Microwave propagation in two-dimensional dielectric lattices
Published in Physical review letters (07-10-1991)“…The properties of X-band microwaves propagating in a 2D array of low-loss high-dielectric constant cylinders are calculated and measured. Transmission bands…”
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4
Directional light coupling from microdisk lasers
Published in Applied physics letters (08-02-1993)“…We describe methods for directional coupling of light output from whispering-gallery mode microdisk lasers. Patterned asymmetries in the shape of microdisk…”
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5
Lasing from excitons in quantum wires
Published in Physical review letters (13-12-1993)Get full text
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6
Microwave localization by two-dimensional random scattering
Published in Nature (London) (07-11-1991)“…Measurements of the electric-field energy density for microwave radiation localized in essentially two-dimensional space by scattering from a random array of…”
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7
Room-temperature lasing action in In0.51Ga0.49P/In0.2Ga0.8As microcylinder laser diodes
Published in Applied physics letters (26-04-1993)“…We report room-temperature operation of electrically pumped whispering-gallery mode In0.51Ga0.49P/In0.2Ga0.8As microcylinder laser diodes with emission at…”
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8
GaAs-AlAs monolithic microresonator arrays
Published in Applied physics letters (13-07-1987)“…Monolithic optical logic devices 1.5–5 μm across are defined by ion-beam assisted etching through a GaAs/AlAs Fabry–Perot structure grown by molecular beam…”
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9
Multiple quantum well reflection modulator
Published in Applied physics letters (27-04-1987)“…We demonstrated a quantum-confined Stark effect electroabsorption modulator consisting of quantum wells of AlGaAs and GaAs on an epitaxial multilayer…”
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10
Vertical cavity single quantum well laser
Published in Applied physics letters (31-07-1989)“…We have achieved room-temperature pulsed and cw lasing at 980 nm in an optically pumped vertical cavity structure grown by molecular beam epitaxy containing…”
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11
Lasing characteristics of GaAs microresonators
Published in Applied physics letters (10-04-1989)“…Lasing characteristics of optically pumped 1.5-μm-diam GaAs-AlAs microresonators are reported. Room-temperature thresholds of 9 pJ were observed. Uniform…”
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12
Transverse modes, waveguide dispersion, and 30 ps recovery in submicron GaAs/AlAs microresonators
Published in Applied physics letters (03-07-1989)“…We have studied room-temperature optical gating of ∼5 ps pulses in GaAs/AlAs microresonators with diameters ranging from <0.5 μm to 1.5 μm by using a…”
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13
Optical bistability in semiconductors
Published in Applied physics letters (15-09-1979)“…Optical bistability has been observed in a semiconductor for the first time. The bistable etalon consists of a GaAlAs-GaAs-GaAlAs…”
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14
High index contrast mirrors for optical microcavities
Published in Applied physics letters (01-10-1990)“…A new technique for constructing multilayer dielectric mirrors is described that results in high reflectivities with only two or three dielectric layer pairs…”
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15
Room-temperature excitonic optical bistability in a GaAs-GaAlAs superlattice étalon
Published in Applied physics letters (01-08-1982)“…The quantum wells provided by a superlattice increase the binding energy of the free excitons in GaAs, permitting 300 K bistable operation of a superlattice…”
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16
Optical measurement of surface recombination in InGaAs quantum well mesa structures
Published in Applied physics letters (25-07-1988)“…Surface recombination of optically created electron-hole plasma in InGaAs/InP quantum well mesa structures formed by chemical beam epitaxy followed by…”
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17
High-finesse (Al, Ga)As interference filters grown by molecular beam epitaxy
Published in Applied physics letters (22-08-1988)“…We have measured finesse values of at least 160 in (Al,Ga)As Fabry–Perot interference filters grown by molecular beam epitaxy. Losses are low and the finesses…”
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18
Differential Gain and Bistability Using a Sodium-Filled Fabry-Perot Interferometer
Published in Physical review letters (01-01-1976)Get full text
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19
Nonrandom doping and elastic scattering of carriers in semiconductors
Published in Applied physics letters (06-03-1989)“…High-density delta doping of semiconductors may result in partial ordering of dopant atoms. Under suitable circumstances, periodic delta doping leads to…”
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20
Chemical beam epitaxially grown InP/InGaAsP interference mirror for use near 1.55 μm wavelength
Published in Applied physics letters (14-09-1987)“…An interference mirror for use near 1.55 μm wavelength was constructed using InP and lattice-matched InGaAsP on an InP substrate with chemical beam epitaxy…”
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