Search Results - "MATSUNO, Noriaki"

Low-Power Widely Tunable Gm-C Filter Employing an Adaptive DC-blocking, Triode-Biased MOSFET Transconductor by Hori, Shinichi, Matsuno, Noriaki, Maeda, Tadashi, Hida, Hikaru

“…We propose a transconductor capable of providing a wide continuous-tuning-range filter applicable to Bluetooth, W-CDMA, LTE, and IEEE 802.11a/b/g W-LANs…”
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A widely tunable CMOS Gm-C filter with a negative source degeneration resistor transconductor by Shinichi Hori, Tadashi Maeda, hitoshi Yano, Noriaki Matsuno, Keiichi Numata, Nobuhide Yoshida, Yuji Takahashi, Tomoyuki Yamase, Walkington, R., Hikaru, H.

“…We propose a new negative source degeneration resistor (NSDR) transconductor to achieve a wide continuous-tuning range gm-C filter applicable for…”
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A 22nm 0.84mm2 BLE Transceiver With Self IQ-Phase Correction Achieving 39dB Image Rejection and on-Chip Antenna Impedance Tuning by Shibata, Kenichi, Matsui, Hiroaki, Asano, Hironori, Kusaka, Yuichi, Ueda, Keisuke, Matsuno, Noriaki, Sato, Hisayasu

“…The IoT crucially requires a large number of low-cost and low-power wireless sensor nodes. BLE is a strong candidate for their wireless interface. Much effort…”
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Optical properties and structrue of SiO2 films prepared by ion-beam sputtering by Tabata, Akimori, Matsuno, Noriaki, Suzuoki, Yasuo, Mizutani, Teruyoshi

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Transmission Electron Microscopy Observation and Third-Order Optical Nonlinearity of CdSe-Doped Glass Thin Films Prepared by Ion-Beam Sputtering Method by Tabata, Akimori, Matsuno, Noriaki, Suzuoki, Yasuo, Teruyoshi Mizutani, Teruyoshi Mizutani

“…The structure of CdSe-doped silica glass thin films prepared by ion-beam sputtering (IBS) method was investigated by transmission electron microscopy (TEM) and…”
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Properties of the CdSe-doped glass thin films prepared by ion-beam sputtering method by SUZUOKI, Y, MATSUNO, N, TABATA, A, TAKEDA, M, MIZUTANI, T

“…CdSe-doped silica glass thin films were prepared by the ion-beam sputtering (IBS) method and the ion-assisted deposition method (IAD). Properties of the doped…”
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Low-power-consumption direct-conversion CMOS transceiver for multi-standard 5-GHz wireless LAN systems with channel bandwidths of 5-20 MHz by Maeda, T., Yano, H., Hori, S., Matsuno, N., Yamase, T., Tokairin, T., Walkington, R., Yoshida, N., Numata, K., Yanagisawa, K., Takahashi, Y., Fujii, M., Hida, H.

“…This paper describes a low-power-consumption direct-conversion CMOS transceiver for WLAN systems operating at 4.9-5.95 GHz. Its power consumption is reduced by…”
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A Low-Power Dual-Band Triple-Mode WLAN CMOS Transceiver by Maeda, T., Matsuno, N., Hori, S., Yamase, T., Tokairin, T., Yanagisawa, K., Yano, H., Walkington, R., Numata, K., Yoshida, N., Takahashi, Y., Hida, H.

“…This paper describes a 0.18-mum CMOS direct-conversion dual-band triple-mode wireless LAN transceiver. The transceiver has a concurrent dual-band low-noise…”
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A Low-Voltage −204 dBc/Hz FoMT 1.8-2.7 GHz LC-VCO using 55nm SOTB Technology by Shibata, Kenichi, Takegawa, Kyoya, Matsuno, Noriaki, Sato, Hisayasu

“…A low-voltage, low-power, low-phase-noise, and wide-frequency-tuning-range (FTR) LC-VCO for Internet of Things (IoT) has been implemented in the 55nm Silicon…”
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A New DC-Offset and I/Q-Mismatch Compensation Technique for a CMOS Direct-Conversion WLAN Transmitter by Yanagisawa, K., Matsuno, N., Maeda, T., Tanaka, S.

“…This paper presents a novel DC-offset and I/Q-mismatch compensation technique with short convergence time, high accuracy, and low-circuit-complexity. In this…”
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Performance of Ku-Band on-chip matched Si monolithic amplifiers using 0.18-micron-gatelength MOSFETs by Yano, Hitoshi, Nakahara, Yasushi, Hirayama, Tomohisa, Matsuno, Noriaki, Suzuki, Yasuyuki, Furukawa, Akio

“…We demonstrated Ku-band (12-20 GHz) Si MOSFET monolithic amplifiers with on-chip matching networks. In these amplifiers, we used 3-micron-thick Al-metal…”
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A 0.18-μm CMOS Low-spurious Local Signal Generator for MB-OFDM UWB Radio by Tokairin, T., Matsuno, N., Numata, K., Maeda, T., Tanaka, S.

“…This paper presents a new single PLL and single SSB-mixer architecture for a local signal generator of the Mode-1 MB-OFDM UWB systems. Using a VCO running at…”
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Performance of Ku-band on-chip matched Si monolithic amplifiers using 0.18-μm-gatelength MOSFETs by Yano, H., Nakahara, Y., Hirayama, T., Suzuki, Y., Furukawa, A.

“…We demonstrated Ku-band (12-20 GHz) Si MOSFET monolithic amplifiers with on-chip matching networks. In these amplifiers, we used 3- mu m-thick Al-metal…”
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Optical properties and structrue of SiO 2 films prepared by ion-beam sputtering by Tabata, Akimori, Matsuno, Noriaki, Suzuoki, Yasuo, Mizutani, Teruyoshi

“…SiO 2 films were prepared by an ion-beam sputtering (IBS) method and their properties were studied using visible-UV absorption spectroscopy, X-ray…”
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Optical properties and structure of SiO sub(2) films prepared by ion-beam sputtering by Tabata, Akimori, Matsuno, Noriaki, Suzuoki, Yasuo, Mizutani, Teruyoshi

“…SiO sub(2) films were prepared by an ion-beam sputtering (IBS) method and their properties were studied using visible-UV absorption spectroscopy, X-ray…”
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An accurate HJFET current–voltage model including temperature dependence for a circuit simulator by Matsuno, Noriaki, Yano, Hitoshi, Hida, Hikaru, Maeda, Tadashi

“…We present a new hetero-junction FET (HJFET) current–voltage ( I– V) model intended for implementation with a large signal simulator. The developed model takes…”
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A 500-mW high-efficiency Si MOS MMIC amplifier for 900-MHz-band use by Matsuno, N., Yano, H., Suzuki, Y., Watanabe, T., Tsubaki, S., Toda, T., Honjo, K.

“…A 500-mW monolithic-microwave integrated-circuit (MMIC) amplifier using a 0.6-/spl mu/m Si MOSFET for 900-MHz-band use has been developed. The input matching…”
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A direct-conversion CMOS transceiver for 4.9-5.95GHz multi-standard WLANs by MAEDA, Tadashi, YANO, Hitoshi, FUJII, Masahiro, HIDA, Hikaru, YAMASE, Tomoyuki, YOSHIDA, Nobuhide, MATSUNO, Noriaki, HORI, Shinichi, NUMATA, Keiichi, WALKINGTON, Robert, TOKAIRIN, Takashi, TAKAHASHI, Yuji

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A wide supply voltage and low-rx noise envelope tracking supply modulator IC for LTE handset power amplifiers by Honda, Y., Yokota, Y., Goto, N., Matsuno, N., Saito, Y.

“…A high efficiency envelope tracking supply modulator IC for LTE handset use is presented. It is fabricated using 0.35 μm CMOS with optional 6-V-MOSFETs, and…”
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0.2-μm fully-self-aligned Y-shaped gate HJFET's with reduced gate-fringing capacitance fabricated using collimated sputtering and electroless Au-plating by Wada, S., Tokushima, M., Fukaishi, M., Matsuno, N., Yano, H., Hida, H., Maeda, T.

“…This paper reports on new fully-self-aligned gate technology for 0.2- mu m, high-aspect-ratio, Y-shaped-gate heterojunction-FET's (HJFET's) with about half the…”
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