Search Results - "MASSOUD, H. Z"

Thermal oxidation of silicon in the ultrathin regime by Massoud, H.Z

“…This article reviews our present understanding of silicon oxidation kinetics in the ultrathin-film regime. Experimental results obtained at the onset of…”
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Simulation of the drain-current characteristics of MOSFETs with ultrathin oxides in the presence of direct tunneling by Shiely, J.P, Massoud, H.Z

“…Carrier tunneling in the gate dielectric, especially in the direct-tunneling regime where large current densities flow through the gate oxide, are known to…”
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Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2/Ta2O5 dielectrics with oxide scaling by SHANWARE, A, MASSOUD, H. Z, VOGEL, E, HENSON, K, HAUSER, J. R, WORTMAN, J. J

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The effects of Ge content in Poly-Si1-xGex gate material on the tunneling barrier in PMOS devices by SHANWARE, A, MASSOUD, H. Z, ACKER, A, LI, V. Z.-Q, MIRABEDINI, M. R, HENSON, K, HAUSER, J. R, WORTMAN, J. J

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The spectral grid method: a novel fast Schrodinger-equation solver for semiconductor nanodevice simulation by Qing Huo Liu, Candong Cheng, Massoud, H.Z.

“…A spectral-domain method is described for solving Schrodinger's equation based on the multidomain pseudospectral method and boundary patching. The…”
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Rigid and flexible thin-film multielectrode arrays for transmural cardiac recording by Mastrototaro, J.J., Massoud, H.Z., Pilkington, T.C., Ideker, R.E.

“…Thin-film transmural cardiac multielectric arrays were fabricated using integrated-circuit processing techniques. Improvements over conventional handmade…”
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Manufacturability of rapid-thermal oxidation of silicon: oxide thickness, oxide thickness variation, and system dependency by Deaton, R., Massoud, H.Z.

“…The dependence of oxide thickness, and oxide thickness variation within a wafer and wafer-to-wafer on process variables was studied in rapid-thermal processing…”
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Measurement and modeling of charge feedthrough in n-channel MOS analog switches by Wilson, W.B., Massoud, H.Z., Swanson, E.J., George, R.T., Fair, R.B.

“…Charge feedthrough in analog MOS switches has been measured. The dependence of the feedthrough voltage on the input and tub voltages, device dimensions, and…”
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Influence of rapid thermal annealing temperature on the electrical properties of Be-implanted GaAs p-n junctions by DE LYON, T. J, CASEY, H. C. JR, MASSOUD, H. Z, TIMMONS, M. L, HUTCHBY, J. A, DIETRICH, H. B

“…Planar, Be-implanted p-n junctions were fabricated in GaAs with rapid thermal annealing (RTA). Five second isochronal anneals over a temperature range of…”
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Ellipsometric monitoring and control of the rapid thermal oxidation of silicon by Conrad, K. A., Sampson, R. K., Massoud, H. Z., Irene, E. A.

“…Single wavelength ellipsometry is demonstrated for in situ process monitoring and control in a rapid thermal processing system. Simultaneous in situ…”
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Causes and prevention of temperature-dependent bubbles in silicon wafer bonding by MITANI, K, LEHMANN, V, STENGL, R, FEIJOO, D, GOSELE, U. M, MASSOUD, H. Z

“…Unbonded areas or bubbles generated at the interface of bonded silicon wafers in the temperature range of 200-800°C have been investigated. Experiments…”
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The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation by YUDONG KIM, MASSOUD, H. Z, FAIR, R. B

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Reverse dopant redistribution during the initial stages of the oxidation of heavily doped silicon in dry oxygen by MASSOUD, H. Z

“…The oxidation of heavily phosphorus-doped (100) and (111) silicon in the 800–1000 °C range in dry oxygen was studied in the thin-film regime using in situ…”
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Boron profile changes during low-temperature annealing of BF2+-implanted silicon by YUDONG KIM, MASSOUD, H. Z, FAIR, R. B

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Experimental characterization of two-dimensional dopant profiles in silicon using chemical staining by RAVI SUBRAHMANYAN, MASSOUD, H. Z, FAIR, R. B

“…An experimental technique for the measurement of two-dimensional impurity diffusion profiles in silicon has been developed. Both the lateral and in-depth…”
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Transfer of patterns from the backside of a silicon wafer coated with Si3N4 to its front surface during wet oxidation by BOYD ROGERS, W, MASSOUD, H. Z

“…Patterns on the backside of silicon wafers coated with Si3N4 films have been observed on their front surfaces after wet oxidation. This pattern transfer…”
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Two-dimensional impurity profiling with emission computed tomography techniques by Goodwin-Johansson, S.H., Subrahmanyan, R., Floyd, C.E., Massoud, H.Z.

“…A technique for the determination of two-dimensional impurity profiles in silicon using methods for emission computed tomography is presented. Several…”
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Reconstructed two‐dimensional doping profiles from multiple one‐dimensional secondary ion mass spectrometry measurements by Goodwin‐Johansson, Scott H., Ray, Mark, Kim, Yudong, Massoud, H. Z.

“…Two‐dimensional doping profiles can be determined from multiple one‐dimensional secondary ion mass spectrometry (SIMS) profiles using computed tomography…”
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Optimum Preparation And Storage Of Ag/Cl And Pt Black Microelectrodes For Transmural Cardiac Recording Applications by Tsuei, T.W., Henderson, R.H., Massoud, H.Z.

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Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO sub(2) and SiO sub(2)/Ta sub(2)O sub(5) dielectrics with oxide scaling by Shanware, A, Massoud, H Z, Vogel, E, Henson, K, Hauser, J R, Wortman, J J

“…Gate oxide scaling in NMOSFETs causes electrons to tunnel from the conduction and valence bands of the silicon substrate in the direct-tunneling regime. In…”
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