Search Results - "MARTI, X"

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  1. 1

    Antiferromagnetic spintronics by Jungwirth, T., Marti, X., Wadley, P., Wunderlich, J.

    Published in Nature nanotechnology (01-03-2016)
    “…This article reviews efforts to control and monitor the magnetization in antiferromagnetic materials, as well as the prospects for antiferromagnetic…”
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    Journal Article
  2. 2

    The multiple directions of antiferromagnetic spintronics by Jungwirth, T., Sinova, J., Manchon, A., Marti, X., Wunderlich, J., Felser, C.

    Published in Nature physics (01-03-2018)
    “…New developments in spintronics based on antiferromagnetic materials show promise for improved fundamental understanding and applications in technology…”
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    Journal Article
  3. 3

    Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility by Olejník, K., Schuler, V., Marti, X., Novák, V., Kašpar, Z., Wadley, P., Campion, R. P., Edmonds, K. W., Gallagher, B. L., Garces, J., Baumgartner, M., Gambardella, P., Jungwirth, T.

    Published in Nature communications (19-05-2017)
    “…Antiferromagnets offer a unique combination of properties including the radiation and magnetic field hardness, the absence of stray magnetic fields, and the…”
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    Journal Article
  4. 4

    Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe by Kriegner, D., Výborný, K., Olejník, K., Reichlová, H., Novák, V., Marti, X., Gazquez, J., Saidl, V., Němec, P., Volobuev, V. V., Springholz, G., Holý, V., Jungwirth, T.

    Published in Nature communications (09-06-2016)
    “…Commercial magnetic memories rely on the bistability of ordered spins in ferromagnetic materials. Recently, experimental bistable memories have been realized…”
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    Journal Article
  5. 5

    Room-temperature antiferromagnetic memory resistor by Marti, X., Fina, I., Frontera, C., Liu, Jian, Wadley, P., He, Q., Paull, R. J., Clarkson, J. D., Kudrnovský, J., Turek, I., Kuneš, J., Yi, D., Chu, J-H., Nelson, C. T., You, L., Arenholz, E., Salahuddin, S., Fontcuberta, J., Jungwirth, T., Ramesh, R.

    Published in Nature materials (01-04-2014)
    “…The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access…”
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    Journal Article
  6. 6

    Electric-field control of exchange bias in multiferroic epitaxial heterostructures by Laukhin, V, Skumryev, V, Martí, X, Hrabovsky, D, Sánchez, F, García-Cuenca, M V, Ferrater, C, Varela, M, Lüders, U, Bobo, J F, Fontcuberta, J

    Published in Physical review letters (01-12-2006)
    “…The magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic…”
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    Journal Article
  7. 7

    Anisotropic magnetoresistance in an antiferromagnetic semiconductor by Fina, I., Marti, X., Yi, D., Liu, J., Chu, J. H., Rayan-Serrao, C., Suresha, S., Shick, A. B., Železný, J., Jungwirth, T., Fontcuberta, J., Ramesh, R.

    Published in Nature communications (10-09-2014)
    “…Recent studies in devices comprising metal antiferromagnets have demonstrated the feasibility of a novel spintronic concept in which spin-dependent phenomena…”
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    Journal Article
  8. 8

    Electric Control of Antiferromagnets by Fina, I., Marti, X.

    Published in IEEE transactions on magnetics (01-02-2017)
    “…In the past five years, most of the paradigmatic concepts employed in spintronics have been replicated substituting ferromagnets by antiferromagnets in the…”
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    Journal Article
  9. 9
  10. 10

    Investigation of magneto-structural phase transition in FeRh by reflectivity and transmittance measurements in visible and near-infrared spectral region by Saidl, V, Brajer, M, Horák, L, Reichlová, H, Výborný, K, Veis, M, Janda, T, Trojánek, F, Maryško, M, Fina, I, Marti, X, Jungwirth, T, N mec, P

    Published in New journal of physics (03-08-2016)
    “…Magneto-structural phase transition in FeRh epitaxial layers was studied optically. It is shown that the transition between the low-temperature…”
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    Journal Article
  11. 11

    Vehicle Classification System Based on Ferroelectric Materials by Fina, I., Marti, X., Catalan, G.

    “…Vehicle classification taking into account the weight of the vehicle and its number of shafts can be relevant for adequate control of vehicles mobility…”
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    Conference Proceeding
  12. 12

    Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling by Petti, D., Albisetti, E., Reichlová, H., Gazquez, J., Varela, M., Molina-Ruiz, M., Lopeandía, A. F., Olejník, K., Novák, V., Fina, I., Dkhil, B., Hayakawa, J., Marti, X., Wunderlich, J., Jungwirth, T., Bertacco, R.

    Published in Applied physics letters (13-05-2013)
    “…In this paper, we demonstrate that in Ta/MgO/IrMn tunneling junctions, containing no ferromagnetic elements, distinct metastable resistance states can be set…”
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    Journal Article
  13. 13

    X-ray interference effects on the determination of structural data in ultrathin La2/3Sr1/3MnO3 epitaxial thin films by Pesquera, D., Marti, X., Holy, V., Bachelet, R., Herranz, G., Fontcuberta, J.

    Published in Applied physics letters (28-11-2011)
    “…We analyze x-ray diffraction data to extract cell parameters of ultrathin films on closely matching substrates. We focus on epitaxial La2/3Sr1/3MnO3 films…”
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    Journal Article
  14. 14

    Development of prosocial behaviour in children after the improvement of family competences by Orte, Carmen, Ballester, Lluís, March, Martí X, Oliver, Josep L, Pascual, Belén, Gomila, Maria Antònia

    Published in Journal of children's services (15-06-2015)
    “…Purpose – This research assesses the predictive capacity of key factors in the development of family competences: parent-children relationship, family…”
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    Journal Article
  15. 15

    A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction by Park, B. G., Wunderlich, J., Martí, X., Holý, V., Kurosaki, Y., Yamada, M., Yamamoto, H., Nishide, A., Hayakawa, J., Takahashi, H., Shick, A. B., Jungwirth, T.

    Published in Nature materials (01-05-2011)
    “…Spin-valve structures used in modern hard-drive read heads and magnetic random access memories comprise two ferromagnetic electrodes. It is now shown that…”
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    Journal Article
  16. 16

    Ferromagnetism in epitaxial orthorhombic YMnO3 thin films by Marti, X., Skumryev, V., Cattoni, A., Bertacco, R., Laukhin, V., Ferrater, C., García-Cuenca, M.V., Varela, M., Sánchez, F., Fontcuberta, J.

    “…Epitaxial orthorhombic YMnO3 thin films, (0 0 1) oriented, have been grown by pulsed laser deposition on (0 0 1)SrTiO3 substrates. Their crystal structure and…”
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    Journal Article
  17. 17
  18. 18

    Strain tuned magnetoelectric coupling in orthorhombic YMnO3 thin films by Marti, X., Fina, I., Skumryev, V., Ferrater, C., Varela, M., Fábrega, L., Sánchez, F., Fontcuberta, J.

    Published in Applied physics letters (05-10-2009)
    “…Orthorhombic YMnO3 epitaxial thin films were grown on Nb(0.5%)-doped SrTiO3(001) substrates. Film’s thickness was varied to tune the epitaxial strain…”
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    Journal Article
  19. 19

    Magnetization reversal by electric-field decoupling of magnetic and ferroelectric domain walls in multiferroic-based heterostructures by Skumryev, V, Laukhin, V, Fina, I, Martí, X, Sánchez, F, Gospodinov, M, Fontcuberta, J

    Published in Physical review letters (03-02-2011)
    “…We demonstrate that the magnetization of a ferromagnet in contact with an antiferromagnetic multiferroic (LuMnO(3)) can be speedily reversed by electric-field…”
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    Journal Article
  20. 20

    Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs by Wadley, P., Novák, V., Campion, R.P., Rinaldi, C., Martí, X., Reichlová, H., Železný, J., Gazquez, J., Roldan, M.A., Varela, M., Khalyavin, D., Langridge, S., Kriegner, D., Máca, F., Mašek, J., Bertacco, R., Holý, V., Rushforth, A.W., Edmonds, K.W., Gallagher, B.L., Foxon, C.T., Wunderlich, J., Jungwirth, T.

    Published in Nature communications (2013)
    “…Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive…”
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    Journal Article