Search Results - "MAOQI HE"

Diameter dependent transport properties of gallium nitride nanowire field effect transistors by Motayed, Abhishek, Vaudin, Mark, Davydov, Albert V., Melngailis, John, He, Maoqi, Mohammad, S. N.

“…The authors report transport property measurements of individual GaN nanowire field effect transistors and the correlation of the electron mobilities with the…”
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Electronic and Structural Characteristics of Zinc-Blende Wurtzite Biphasic Homostructure GaN Nanowires by Jacobs, Benjamin W, Ayres, Virginia M, Petkov, Mihail P, Halpern, Joshua B, He, Maoqi, Baczewski, Andrew D, McElroy, Kaylee, Crimp, Martin A, Zhang, Jiaming, Shaw, Harry C

“…We report a new biphasic crystalline wurtzite/zinc-blende homostructure in gallium nitride nanowires. Cathodoluminescence was used to quantitatively measure…”
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Growth of GaN nanowires by direct reaction of Ga with NH3 by MAOQI HE, PEIZHEN ZHOU, NOOR MOHAMMAD, S, HARRIS, Gary L, HALPERN, Joshua B, JACOBS, Randy, SARNEY, Wendy L, SALAMANCA-RIBA, Lourdes

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Gallium Nitride Nanowire Devices - Fabrication, Characterization, and Simulation by Motayed, A., Davydov, A.V., Maoqi He, Mohammad, S.N.

“…This study revealed that better gate geometries for GaN FETs can result in channel inversion hence enhancement mode in otherwise depletion mode devices…”
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Preparation of nearly oxygen-free AlN thin films by pulsed laser deposition by He, Maoqi, Cheng, Naiqun, Zhou, Peizhen, Okabe, Hideo, Halpern, Joshua B.

“…For preparation of oxygen-free AlN thin films by pulsed laser deposition (PLD), emission spectra of the ablation plume of an AlN target were measured to search…”
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Photochemistry of Cyanoacetylene at 193.3 nm by Seki, Kanekazu, He, Maoqi, Liu, Renzhang, Okabe, Hideo

“…Cyanoacetylene (CA) is an important minor constituent in the Titan atmosphere and is present in the interstellar medium. The absorption cross section of CA has…”
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365 nm operation of n -nanowire/ p -gallium nitride homojunction light emitting diodes by Motayed, Abhishek, Davydov, Albert V., He, Maoqi, Mohammad, S. N., Melngailis, John

“…The authors report gallium nitride (GaN) nanoscale light emitting diodes utilizing n - Ga N nanowire/ p - Ga N substrate homojunctions. Utilizing electric…”
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Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3 by He, Maoqi, Minus, Indira, Zhou, Piezhen, Mohammed, S. Noor, Halpern, Joshua B., Jacobs, Randy, Sarney, Wendy L., Salamanca-Riba, Lourdes, Vispute, R. D.

“…Large-scale wurtzite GaN nanowires and nanotubes were grown by direct reaction of metal gallium vapor with flowing ammonia in an 850–900 °C horizontal oven…”
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Diameter dependent transport properties of gallium nitride nanowirefield effect transistors by Motayed, Abhishek, Vaudin, Mark, Davydov, Albert V., Melngailis, John, He, Maoqi, Mohammad, S. N.

“…The authors report transport property measurements of individual GaN nanowire field effect transistors and the correlation of the electron mobilities with the…”
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InAs nanowires and whiskers grown by reaction of indium with GaAs by He, Maoqi, Fahmi, M. M. E., Mohammad, S. Noor, Jacobs, Randolph N., Salamanca-Riba, Lourdes, Felt, Frederick, Jah, Muzar, Sharma, Ashok, Lakins, Darryl

“…Free-standing InAs nanowires and whiskers were grown employing reaction of indium (In) liquid and vapor with GaAs substrate. The arsenic (As) atoms resulting…”
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Reaction rates of the CN radical with diacetylene and dicyanoacetylene by Seki, Kanekazu, Yagi, Mikio, He, Maoqi, Halpern, Joshua B., Okabe, Hideo

“…Rates of CN reactions with diacetylene (DA) and dicyanoacetylene (DCA) have been measured at room temperature from the decay of the CN radical at various…”
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Growth of GaN nanowires by direct reaction of Ga with NH 3 by He, Maoqi, Zhou, Peizhen, Mohammad, S.Noor, Harris, Gary L., Halpern, Joshua B., Jacobs, Randy, Sarney, Wendy L., Salamanca-Riba, Lourdes

“…Semiconducting, single crystal wurtzite GaN nanowires have been grown by direct reaction of metal Ga with NH 3 in a tube furnace. This paper discusses the…”
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Large Scale Assembly of GaN Nanowires Using Electric Field Assisted Alignment Techniques for Device Applications by Motayed, A., Davydov, A.V., Maoqi He, Mohammad, S.N.

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Semiconductor and photoconductive GaN nanowires and nanotubes by Harris, G.L., Zhou, P., Maoqi He, Halpern, J.B.

“…Summary form only given. It is difficult to control carbon nanotube chirality, which directly affects electronic performance. Preliminary results show that…”
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