Search Results - "MANNY, M. P"

Lithography and fabrication processes for sub‐100 nm scale complementary metal–oxide semiconductor by Wind, S. J., Taur, Y., Lee, Y. H., Mii, Y., Viswanathan, R. G., Bucchignano, J. J., Pomerene, A. T., Sicina, R. M., Milkove, K. R., Stiebritz, J. W., Roy, R. A., Hu, C. K., Manny, M. P., Cohen, S., Chen, W.

“…We explore the fabrication of complementary metal–oxide–semiconductor (CMOS) devices and circuits with a critical dimension of 100 nm and below using a variety…”
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Sub-μm linewidth input coils for low Tc integrated thin-film dc superconducting quantum interference devices by KETCHEN, M. B, STAWIASZ, K. G, PEARSON, D. J, BRUNNER, T. A, HU, C.-K, JASO, M. A, MANNY, M. P, PARSONS, A. A, STEIN, K. J

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Sub-μm linewidth input coils for low T c integrated thin-film dc superconducting quantum interference devices by Ketchen, M. B., Stawiasz, K. G., Pearson, D. J., Brunner, T. A., Hu, C.-K., Jaso, M. A., Manny, M. P., Parsons, A. A., Stein, K. J.

“…We have, for the first time, demonstrated integrated dc superconducting quantum interference devices (SQUIDs) with input coils of linewidth down to 0.5 μm. The…”
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Sub-micron linewidth input coils for low Tc integrated thin-film dc superconducting quantum interference devices by Ketchen, M B, STAWIASZ, K G, Pearson, D J, Brunner, T A, Hu, C-k, Jaso, M A, Manny, M P, Parsons, A A, Stein, K J

“…For the first time, demonstrated integrated dc superconducting quantum interference devices (SQUIDs) with input coils of linewidth down to 0.5 micron were…”
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SiGe-base PNP transistors fabricated with n-type UHV/CVD LTE in a `No Dt' process by Harame, D.L., Stork, J.M.C., Meyerson, B.S., Crabbe, E.F., Patton, G.L., Scilla, G.J., de Fresart, E., Bright, A.A., Stanis, C., Megdanis, A.C., Manny, M.P., Petrillo, E.J., Dimeo, M., McIntosh, R.C., Chan, K.K.

“…Experimental results are presented on the use of N-type ultrahigh-vacuum/chemical vapor deposition (UHV/CVD) low-temperature epitaxy (LTE) to deposit thin (45…”
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Characteristics of vertical p-channel MOSFETs for high density circuit application by Wen, D.S., Chang, W.H., Rajeevakumar, T.V., Bronner, G.B., McFarland, P.A., Lii, Y., Chen, T.C., Pesavento, F.L., Manny, M.P., Hwang, W., Dhong, S.H.

“…Vertical p-channel MOSFETs have been experimentally fabricated and characterized. Device characteristics of vertical p-channel MOSFETs are comparable to those…”
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