Search Results - "MALTA, D. P"

High-purity semi-insulating 4H-SiC for microwave device applications by JENNY, J. R, MALTA, D. P, MÜLLER, St. G, POWELL, A. R, TSVETKOV, V. F, HOBGOOD, H. Mcd, GLASS, R. C, CARTER, C. H

“…High-purity, semi-insulating (HPSI) 4H-SiC crystals with diameters up to 75 mm have been grown by the seeded sublimation technique without the intentional…”
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Single-crystal diamond plate liftoff achieved by ion implantation and subsequent annealing by PARIKH, N. R, HUNN, J. D, MCGUCKEN, E, SWANSON, M. L, WHITE, C. W, RUDDER, R. A, MALTA, D. P, POSTHILL, J. B, MARKUNAS, R. J

“…We describe a new method for removing thin, large area sheets of diamond from bulk or homoepitaxial diamond crystals. This method consists of an ion…”
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Chemical vapor deposition of diamond films from water vapor rf-plasma discharges by RUDDER, R. A, HUDSON, G. C, POSTHILL, J. B, THOMAS, R. E, HENDRY, R. C, MALTA, D. P, MARKUNAS, R. J, HUMPHREYS, T. P, NEMANICH, R. J

“…Polycrystalline diamond films have been deposited from water vapor rf-plasma discharges at 1.0 Torr containing various alcohol vapors. No other gases such as…”
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Carbon and oxygen removal from silicon (100) surfaces by remote plasma cleaning techniques by Thomas, R. E., Mantini, M. J., Rudder, R. A., Malta, D. P., Hattangady, S. V., Markunas, R. J.

“…A hydrogen plasma‐based technique for carbon removal has been combined with a modest anneal for oxide desorption at 720 °C to produce atomically clean…”
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Low-defect-density germanium on silicon obtained by a novel growth phenomenon by MALTA, D. P, POSTHILL, J. B, MARKUNAS, R. J, HUMPHREYS, T. P

“…Heteroepitaxial Ge on Si has been grown using molecular beam epitaxy at a Si substrate temperature of 900 °C. Electron microscopy results reveal a highly…”
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Visible light emission from quantized planar Ge structures by VENKATASUBRAMANIAN, R, MALTA, D. P, TIMMONS, M. L, HUTCHBY, J. A

“…Visible photoluminescence has been observed near 1.9 eV at 300 K from quantized planar Ge structures. This is the first observation of luminescence in Ge and…”
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Etch-delineation of defects in diamond by exposure to an oxidizing flame by Malta, D.P., Posthill, J.B., Rudder, R.A., Hudson, G.C., Markunas, R.J.

“…An experimental study of the etching properties of defects in diamond using propane flame exposure in air is presented. Both natural diamond crystals and…”
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Secondary electron emission enhancement and defect contrast from diamond following exposure to atomic hydrogen by Malta, D. P., Posthill, J. B., Humphreys, T. P., Thomas, R. E., Fountain, G. G., Rudder, R. A., Hudson, G. C., Mantini, M. J., Markunas, R. J.

“…Polished nominal (100) surfaces of four types of diamonds were exposed to atomic hydrogen by hot filament cracking of H2 gas or by immersion in a H2 plasma…”
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Demonstration of a method to fabricate a large-area diamond single crystal by Posthill, J.B., Malta, D.P., Hudson, G.C., Thomas, R.E., Humphreys, T.P., Hendry, R.C., Rudder, R.A., Markunas, R.J.

“…A multi-step process to fabricate a diamond single crystal that is larger than the original, natural, commercially-obtained crystals is described. Starting…”
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The role of atomic hydrogen and its influence on the enhancement of secondary electron emission from C(001) surfaces by Humphreys, T. P., Thomas, R. E., Malta, D. P., Posthill, J. B., Mantini, M. J., Rudder, R. A., Hudson, G. C., Markunas, R. J., Pettenkofer, C.

“…The role of chemisorbed hydrogen in the enhancement of low-energy electron emission from natural type IIb C(001) diamond surfaces has been investigated. A…”
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Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective by Müller, St.G., Brady, M.F., Burk, A.A., Hobgood, H.McD, Jenny, J.R., Leonard, R.T., Malta, D.P., Powell, A.R., Sumakeris, J.J., Tsvetkov, V.F., Carter, C.H.

“…We review the progress in the industrial production of SiC substrates and epitaxial layers for high power semiconductor devices. Optimization of SiC bulk…”
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Material and device characterization toward high-efficiency GaAs solar cells on optical-grade polycrystalline Ge substrates by Venkatasubramanian, R., Malta, D.P., Timmons, M.L., Posthill, J.B., Hutchby, J.A., Ahrenkiel, R., Keyes, B., Wangensteen, T.

“…In this work, the authors present a detailed characterization of the material and device properties of GaAs materials grown on optical-grade poly-Ge…”
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Physical basis and characteristics of light emission from quantized planar Ge structures by Venkatasubramanian, R., Malta, D.P., Timmons, M.L., Hutchby, J.A.

“…The characteristics of luminescence from quantized planar Ge structures are presented, showing stability with time, dependence on laser power excitation and…”
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