Search Results - "M. Tchernycheva"

Integrated Photonic Platform Based on InGaN/GaN Nanowire Emitters and Detectors by Tchernycheva, M, Messanvi, A, de Luna Bugallo, A, Jacopin, G, Lavenus, P, Rigutti, L, Zhang, H, Halioua, Y, Julien, F. H, Eymery, J, Durand, C

“…We report the fabrication of a photonic platform consisting of single wire light-emitting diodes (LED) and photodetectors optically coupled by waveguides…”
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InGaN/GaN Core–Shell Single Nanowire Light Emitting Diodes with Graphene-Based P‑Contact by Tchernycheva, M, Lavenus, P, Zhang, H, Babichev, A. V, Jacopin, G, Shahmohammadi, M, Julien, F. H, Ciechonski, R, Vescovi, G, Kryliouk, O

“…We report on the demonstration of MOVPE-grown single nanowire InGaN/GaN core–shell light emitting diodes (LEDs) with a transparent graphene contact for hole…”
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GaN nanowire ultraviolet photodetector with a graphene transparent contact by Babichev, A V, Zhang, H, Lavenus, P, Julien, F H, Egorov, AYu, Lin, Y T, Tu, L W, Tchernycheva, M

“…We report on the fabrication of graphene contact to GaN nanowire ensemble and on the demonstration of photodetectors using chemical vapor deposition-grown…”
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Ultraviolet Photodetector Based on GaN/AlN Quantum Disks in a Single Nanowire by Rigutti, L, Tchernycheva, M, De Luna Bugallo, A, Jacopin, G, Julien, F. H, Zagonel, L. F, March, K, Stephan, O, Kociak, M, Songmuang, R

“…We report the demonstration of single-nanowire photodetectors relying on carrier generation in GaN/AlN QDiscs. Two nanowire samples containing QDiscs of…”
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Excitonic Diffusion in InGaN/GaN Core–Shell Nanowires by Shahmohammadi, M, Ganière, J.-D, Zhang, H, Ciechonski, R, Vescovi, G, Kryliouk, O, Tchernycheva, M, Jacopin, G

“…We report on the direct observation of the diffusion of carriers in graded InGaN/GaN quantum wells in a nanowire. By probing the local dynamics at the…”
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A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells by Quach, P., Jollivet, A., Babichev, A., Isac, N., Morassi, M., Lemaitre, A., Yunin, P. A., Frayssinet, E., de Mierry, P., Jeannin, M., Bousseksou, A., Colombelli, R., Tchernycheva, M., Cordier, Y., Julien, F. H.

“…We report on a GaN/AlGaN quantum cascade detector operating in the terahertz spectral range. The device was grown by metal organic chemical vapor deposition on…”
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Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells by Jollivet, A., Hinkov, B., Pirotta, S., Hoang, H., Derelle, S., Jaeck, J., Tchernycheva, M., Colombelli, R., Bousseksou, A., Hugues, M., Le Biavan, N., Tamayo-Arriola, J., Montes Bajo, M., Rigutti, L., Hierro, A., Strasser, G., Chauveau, J.-M., Julien, F. H.

“…This paper reports on the demonstration of quantum cascade detectors (QCDs) based on ZnO/ZnMgO quantum wells (QWs) grown by molecular beam epitaxy on an…”
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Investigation of Photovoltaic Properties of Single Core–Shell GaN/InGaN Wires by Messanvi, A, Zhang, H, Neplokh, V, Julien, F. H, Bayle, F, Foldyna, M, Bougerol, C, Gautier, E, Babichev, A, Durand, C, Eymery, J, Tchernycheva, M

“…We report the investigation of the photovoltaic properties of core–shell GaN/InGaN wires. The radial structure is grown on m-plane {11̅00} facets of…”
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Terahertz intersubband absorption of GaN/AlGaN step quantum wells grown by MOVPE on Si(111) and Si(110) substrates by Jollivet, A., Tchernycheva, M., Trinité, V., Frayssinet, E., De Mierry, P., Cordier, Y., Julien, F. H.

“…We demonstrate terahertz intersubband absorptions in nitride step quantum wells (SQWs) grown by metal organic vapor phase epitaxy simultaneously on two…”
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Probing elastic properties of nanowire-based structures by Lu, L., Charron, E., Glushkov, E., Glushkova, N., Bonello, B., Julien, F. H., Gogneau, N., Tchernycheva, M., Boyko, O.

“…We report the analysis of elastic properties of a composite medium consisting of GaN nanowires embedded into a dielectric matrix, which constitutes the active…”
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Publisher's Note: “A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells” [Appl. Phys. Lett. 120, 171103 (2022)] by Quach, P., Jollivet, A., Babichev, A., Isac, N., Morassi, M., Lemaitre, A., Yunin, P. A., Frayssinet, E., de Mierry, P., Jeannin, M., Bousseksou, A., Colombelli, R., Tchernycheva, M., Cordier, Y., Julien, F. H.

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Nanoscale analysis of electrical junctions in InGaP nanowires grown by template-assisted selective epitaxy by Piazza, V., Wirths, S., Bologna, N., Ahmed, A. A., Bayle, F., Schmid, H., Julien, F., Tchernycheva, M.

“…We report the analysis of the electrical properties of Inx−1GaxP nanowires (NWs) grown by template-assisted selective epitaxy. The individual NW properties are…”
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Influence of surface passivation on the electrical properties of p–i–n GaAsP nanowires by Saket, O., Himwas, C., Cattoni, A., Oehler, F., Bayle, F., Collin, S., Travers, L., Babichev, A., Julien, F. H., Harmand, J. C., Tchernycheva, M.

“…The electrical properties of passivated and non-passivated axial p–i–n junctions in GaAsP nanowires are investigated using electron-beam induced current…”
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A GaN/AlN quantum cascade detector with a broad response from the mid-infrared (4.1 μm) to the visible (550 nm) spectral range by Quach, P., Liu, S. F., Jollivet, A., Wang, D., Cheng, J. Y., Isac, N., Pirotta, S., Bouville, D., Sheng, S. S., Imran, A., Chen, L., Li, D., Zheng, X. T., Wang, Y. X., Qin, Z. X., Tchernycheva, M., Julien, F. H., Shen, B., Wang, X. Q.

“…We report on a GaN/AlN quantum cascade detector operating in an extended spectral range going from the mid-infrared to visible wavelengths. This broadband…”
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Near infrared quantum cascade detector in GaN∕AlGaN∕AlN heterostructures by Vardi, A., Bahir, G., Guillot, F., Bougerol, C., Monroy, E., Schacham, S. E., Tchernycheva, M., Julien, F. H.

“…A quantum cascade detector in the GaN/AlGaN/AlN material system was implemented. The design takes advantage of the large internal field existing in the…”
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Multi-microscopy study of the influence of stacking faults and three-dimensional In distribution on the optical properties of m-plane InGaN quantum wells grown on microwire sidewalls by Mancini, L., Hernández-Maldonado, D., Lefebvre, W., Houard, J., Blum, I., Vurpillot, F., Eymery, J., Durand, C., Tchernycheva, M., Rigutti, L.

“…The optical properties of m-plane InGaN/GaN quantum wells grown on microwire sidewalls were investigated carrying out a correlative scanning transmission…”
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Terahertz intersubband absorption in GaN/AlGaN step quantum wells by Machhadani, H., Kotsar, Y., Sakr, S., Tchernycheva, M., Colombelli, R., Mangeney, J., Bellet-Amalric, E., Sarigiannidou, E., Monroy, E., Julien, F. H.

“…We demonstrate terahertz intersubband absorptions at frequencies of 2.1 THz ( λ ≈ 143   μ m ) and 4.2 THz ( λ ≈ 70   μ m ) in nitride-based semiconductor…”
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Origin of the electrical instabilities in GaN/AlGaN double-barrier structure by Sakr, S., Warde, E., Tchernycheva, M., Rigutti, L., Isac, N., Julien, F. H.

“…The effect of the temperature on the electrical characteristics in GaN-based resonant tunneling diodes is studied both theoretically and experimentally. At…”
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A simplified GaN/AlGaN quantum cascade detector with an alloy extractor by Sakr, S., Giraud, E., Tchernycheva, M., Isac, N., Quach, P., Warde, E., Grandjean, N., Julien, F. H.

“…We have demonstrated a GaN/AlGaN quantum cascade detector based on a simplified design of the extractor region relying on an AlGaN thick layer. The device…”
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GaN/AlGaN intersubband optoelectronic devices by Machhadani, H, Kandaswamy, P, Sakr, S, Vardi, A, Wirtmüller, A, Nevou, L, Guillot, F, Pozzovivo, G, Tchernycheva, M, Lupu, A, Vivien, L, Crozat, P, Warde, E, Bougerol, C, Schacham, S, Strasser, G, Bahir, G, Monroy, E, Julien, F H

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