Search Results - "M’ghaieth, R."
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1
Correlation of crystal structure and optical properties of Ba0.97Nd0.0267Ti(1-x)WxO3 perovskite
Published in RSC advances (01-01-2018)“…The Ba 0.97 Nd 0.0267 Ti (1− x ) W x O 3 (BNT x ) pervoskite with a single phase tetragonal structure was prepared at 900 °C using the Molten salt method…”
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2
Charge trapping properties of Ge nanocrystals grown via solid-state dewetting
Published in Journal of alloys and compounds (05-08-2018)“…In the present work, we report on the charge trapping properties of Germanium Nanocrystals (Ge NCs) self assembled on SiO2 thin layer for promising…”
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3
Correlation of crystal structure and optical properties of Ba 0.97 Nd 0.0267 Ti (1- x ) W x O 3 perovskite
Published in RSC advances (02-08-2018)“…The Ba Nd Ti W O (BNT ) pervoskite with a single phase tetragonal structure was prepared at 900 °C using the Molten salt method. Raman spectra, Fourier…”
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4
Improvement of performance of GaAs solar cells by inserting self-organized InAs/InGaAs quantum dot superlattices
Published in Solar energy materials and solar cells (01-06-2013)“…This study demonstrates the feasibility of improving the performance of a quantum dot (QD) intermediate band solar cell (SC) by capping an InGaAs layer on the…”
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5
Growth of n-GaAs layer on a rough surface of p-Si substrate by molecular beam epitaxy (MBE) for photovoltaic applications
Published in Journal of crystal growth (15-02-2011)“…The n-GaAs layer was successfully grown on (1 0 0) p-type silicon (p-Si) substrate by molecular beam epitaxy (MBE) using rough surface buffer layer (RSi) to…”
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6
Effect of piezoelectric field on type II transition in InAlAs/InP (311) alloys with different substrate polarity
Published in Journal of alloys and compounds (05-03-2018)“…A ternary Indium-Aliminium-Arsenic (InAlAs) is grown, by metal organic chemical vapor deposition (MOCVD), on a substrate InP (311) with polarity A and B, doped…”
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7
C-DLTS interface defects in Al0.22Ga0.78N/GaN HEMTs on SiC: Spatial location of E2 traps
Published in Physica. E, Low-dimensional systems & nanostructures (01-10-2018)“…The purpose of this paper has focused on the investigation of the High electron mobility transistors AlGaN/GaN HEMTs based on SiC substrates by means of…”
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8
Enhancement of the ionic response of field effect transducers using porous silicon
Published in Talanta (Oxford) (13-12-2001)“…Oxidised porous silicon samples prepared from highly and weakly doped p-type silicon substrates, have been functionalised with calix[4]arene (CA) molecules…”
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Journal Article Conference Proceeding -
9
Photoluminescence and time-resolved photoluminescence studies of lateral carriers transfer among InAs/GaAs quantum dots
Published in Optical and quantum electronics (01-04-2017)“…We report on the lateral transfer and thermal escape of carriers in InAs quantum dots (QDs) grown on a GaAs substrate by solid source molecular beam epitaxy by…”
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10
Local photocurrent mapping of InAs/InGaAs/GaAs intermediate-band solar cells using scanning near-field optical microscopy
Published in Solar energy materials and solar cells (01-01-2016)“…The near-field photocurrent mapping of InAs/InGaAs/GaAs quantum-dots intermediate-band solar cells by means of scanning near-field optical microscopy is…”
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11
Role of surface passivation on visible and infrared emission of Ge quantum dots formed by dewetting
Published in Bulletin of materials science (01-04-2019)“…The dual action of oxide-related defects in the visible and infrared emission of germanium (Ge) self-assembled quantum dots (QDs) is discussed. The Ge…”
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12
Comparison of ZnO thin films on different substrates obtained by sol-gel process and deposited by spin-coating technique
Published in Indian journal of pure & applied physics (01-08-2015)“…In the present paper, zinc oxide thin films obtained by sol gel process and deposited on glass, sapphire, Si (100), Si (111) and ZnO substrates by spin-coating…”
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13
Impact of rough silicon buffer layer on electronic quality of GaAs grown on Si substrate
Published in Current applied physics (01-09-2012)“…The electronic and the structural properties of n-GaAs layers grown on rough surface of silicon substrate by molecular beam epitaxy (MBE) has been investigated…”
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14
Theoretical study of excitons in GaAs quantum dot molecules obtained by nanoholes filling
Published in Materials science in semiconductor processing (15-03-2021)“…In this work we report a theoretical study of excitons behavior in self-assembled strain-free GaAs quantum dot molecules (QDMs) obtained by nanoholes filling…”
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15
Correlation of crystal structure and optical properties of Ba0.97Nd0.0267Ti(1-x)W x O3 perovskite
Published in RSC advances (02-08-2018)“…The Ba0.97Nd0.0267Ti(1-x)W x O3 (BNT x ) pervoskite with a single phase tetragonal structure was prepared at 900 °C using the Molten salt method. Raman…”
Get full text
Journal Article -
16
Comprehensive study of Cp2Mg p-type doping of InP with MOVPE growth technique
Published in Journal of alloys and compounds (05-12-2015)“…Bis-cyclopentadienyl magnesium (Cp2Mg) is used as a p-type dopant in Indium Phosphide (InP) which is grown by metalorganic vapor phase epitaxy (MOVPE). The…”
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17
Comprehensive study of Cp 2 Mg p-type doping of InP with MOVPE growth technique
Published in Journal of alloys and compounds (01-12-2015)Get full text
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18
Study of porous III–V semiconductors by electron spectroscopies (AES and XPS) and optical spectroscopy (PL): Effect of ionic bombardment and nitridation process
Published in Surface science (15-09-2007)“…Electron spectroscopy (AES and XPS) and photoluminescence analysis (PL) were used to study porous layers elaborated by electrochemical etching of p-GaAs and…”
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Journal Article Conference Proceeding -
19
Electrical properties study of double porous silicon layers: Conduction mechanisms
Published in Materials science & engineering. B, Solid-state materials for advanced technology (25-02-2007)“…The electrical conduction properties of a heterostructure based on a stacked double-layer porous silicon structure have been investigated. Two layers of porous…”
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20
Evidence of Poole-frenkel and Fowler-Nordheim tunneling transport mechanisms in leakage current of (Pd/Au)/Al0.22Ga0.78N/GaN heterostructures
Published in Solid state communications (01-07-2020)“…In this report, the gate leakage mechanism for AlGaN/GaN high electron mobility transistors (HEMTs) is consistently analyzed by means of temperature-dependent…”
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