Search Results - "M’ghaieth, R."

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  1. 1

    Correlation of crystal structure and optical properties of Ba0.97Nd0.0267Ti(1-x)WxO3 perovskite by Raddaoui, Z, Smiri, B, Maaoui, A, Dhahri, J, M'ghaieth, R, Abdelmoula, N, Khirouni, K

    Published in RSC advances (01-01-2018)
    “…The Ba 0.97 Nd 0.0267 Ti (1− x ) W x O 3 (BNT x ) pervoskite with a single phase tetragonal structure was prepared at 900 °C using the Molten salt method…”
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    Journal Article
  2. 2

    Charge trapping properties of Ge nanocrystals grown via solid-state dewetting by Jadli, I., Aouassa, M., Johnston, S., Maaref, H., Favre, L., Ronda, A., Berbezier, I., M'ghaieth, R.

    Published in Journal of alloys and compounds (05-08-2018)
    “…In the present work, we report on the charge trapping properties of Germanium Nanocrystals (Ge NCs) self assembled on SiO2 thin layer for promising…”
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    Journal Article
  3. 3

    Correlation of crystal structure and optical properties of Ba 0.97 Nd 0.0267 Ti (1- x ) W x O 3 perovskite by Raddaoui, Z, Smiri, B, Maaoui, A, Dhahri, J, M'ghaieth, R, Abdelmoula, N, Khirouni, K

    Published in RSC advances (02-08-2018)
    “…The Ba Nd Ti W O (BNT ) pervoskite with a single phase tetragonal structure was prepared at 900 °C using the Molten salt method. Raman spectra, Fourier…”
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    Journal Article
  4. 4

    Improvement of performance of GaAs solar cells by inserting self-organized InAs/InGaAs quantum dot superlattices by Sayari, A., Ezzidini, M., Azeza, B., Rekaya, S., Shalaan, E., Yaghmour, S.J., Al-Ghamdi, A.A., Sfaxi, L., M’ghaieth, R., Maaref, H.

    Published in Solar energy materials and solar cells (01-06-2013)
    “…This study demonstrates the feasibility of improving the performance of a quantum dot (QD) intermediate band solar cell (SC) by capping an InGaAs layer on the…”
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    Journal Article
  5. 5

    Growth of n-GaAs layer on a rough surface of p-Si substrate by molecular beam epitaxy (MBE) for photovoltaic applications by Azeza, B., Sfaxi, L., M'ghaieth, R., Fouzri, A., Maaref, H.

    Published in Journal of crystal growth (15-02-2011)
    “…The n-GaAs layer was successfully grown on (1 0 0) p-type silicon (p-Si) substrate by molecular beam epitaxy (MBE) using rough surface buffer layer (RSi) to…”
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    Journal Article
  6. 6

    Effect of piezoelectric field on type II transition in InAlAs/InP (311) alloys with different substrate polarity by Smiri, B., Fraj, I., Saidi, F., Mghaieth, R., Maaref, H.

    Published in Journal of alloys and compounds (05-03-2018)
    “…A ternary Indium-Aliminium-Arsenic (InAlAs) is grown, by metal organic chemical vapor deposition (MOCVD), on a substrate InP (311) with polarity A and B, doped…”
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    Journal Article
  7. 7

    C-DLTS interface defects in Al0.22Ga0.78N/GaN HEMTs on SiC: Spatial location of E2 traps by Jabbari, I., Baira, M., Maaref, H., Mghaieth, R.

    “…The purpose of this paper has focused on the investigation of the High electron mobility transistors AlGaN/GaN HEMTs based on SiC substrates by means of…”
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    Journal Article
  8. 8

    Enhancement of the ionic response of field effect transducers using porous silicon by Zairi, S, Martelet, C, Jaffrezic-Renault, N, Vocanson, F, Lamartine, R, M'ghaı̈eth, R, Maaref, H, Gamoudi, M

    Published in Talanta (Oxford) (13-12-2001)
    “…Oxidised porous silicon samples prepared from highly and weakly doped p-type silicon substrates, have been functionalised with calix[4]arene (CA) molecules…”
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    Journal Article Conference Proceeding
  9. 9

    Photoluminescence and time-resolved photoluminescence studies of lateral carriers transfer among InAs/GaAs quantum dots by Zaaboub, Z., Hassen, F., Naffouti, M., Marie, X., M’ghaieth, R., Maaref, H.

    Published in Optical and quantum electronics (01-04-2017)
    “…We report on the lateral transfer and thermal escape of carriers in InAs quantum dots (QDs) grown on a GaAs substrate by solid source molecular beam epitaxy by…”
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    Journal Article
  10. 10

    Local photocurrent mapping of InAs/InGaAs/GaAs intermediate-band solar cells using scanning near-field optical microscopy by Rouis, W., Haggui, M., Rekaya, S., Sfaxi, L., M’ghaieth, R., Maaref, H., Fumagalli, P.

    Published in Solar energy materials and solar cells (01-01-2016)
    “…The near-field photocurrent mapping of InAs/InGaAs/GaAs quantum-dots intermediate-band solar cells by means of scanning near-field optical microscopy is…”
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    Journal Article
  11. 11

    Role of surface passivation on visible and infrared emission of Ge quantum dots formed by dewetting by Aouassa, M, Zrir, M A, Jadli, I, Hassayoun, L S, Mghaieth, R, Maaref, H, Favre, L, Ronda, A, Berbezier, I

    Published in Bulletin of materials science (01-04-2019)
    “…The dual action of oxide-related defects in the visible and infrared emission of germanium (Ge) self-assembled quantum dots (QDs) is discussed. The Ge…”
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    Journal Article
  12. 12

    Comparison of ZnO thin films on different substrates obtained by sol-gel process and deposited by spin-coating technique by Chebil, W, Fouzri, A, Azeza, B, Sakly, N, Mghaieth, R, Lusson, A, Sallet, V

    Published in Indian journal of pure & applied physics (01-08-2015)
    “…In the present paper, zinc oxide thin films obtained by sol gel process and deposited on glass, sapphire, Si (100), Si (111) and ZnO substrates by spin-coating…”
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    Journal Article
  13. 13

    Impact of rough silicon buffer layer on electronic quality of GaAs grown on Si substrate by Azeza, B., Ezzedini, M., Zaaboub, Z., M’ghaieth, R., Sfaxi, L., Hassen, F., Maaref, H.

    Published in Current applied physics (01-09-2012)
    “…The electronic and the structural properties of n-GaAs layers grown on rough surface of silicon substrate by molecular beam epitaxy (MBE) has been investigated…”
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    Journal Article
  14. 14

    Theoretical study of excitons in GaAs quantum dot molecules obtained by nanoholes filling by Tilouche, S., Sayari, A., Omri, M., Souilem, S., Sfaxi, L., M'Ghaieth, R.

    “…In this work we report a theoretical study of excitons behavior in self-assembled strain-free GaAs quantum dot molecules (QDMs) obtained by nanoholes filling…”
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    Journal Article
  15. 15

    Correlation of crystal structure and optical properties of Ba0.97Nd0.0267Ti(1-x)W x O3 perovskite by Raddaoui, Z, Smiri, B, Maaoui, A, Dhahri, J, M'ghaieth, R, Abdelmoula, N, Khirouni, K

    Published in RSC advances (02-08-2018)
    “…The Ba0.97Nd0.0267Ti(1-x)W x O3 (BNT x ) pervoskite with a single phase tetragonal structure was prepared at 900 °C using the Molten salt method. Raman…”
    Get full text
    Journal Article
  16. 16

    Comprehensive study of Cp2Mg p-type doping of InP with MOVPE growth technique by Ezzedini, M., Zeydi, I., El Kazzi, S., Jiang, S., Guo, W., Sfaxi, L., M'ghaieth, R., Maaref, H., Merckling, C.

    Published in Journal of alloys and compounds (05-12-2015)
    “…Bis-cyclopentadienyl magnesium (Cp2Mg) is used as a p-type dopant in Indium Phosphide (InP) which is grown by metalorganic vapor phase epitaxy (MOVPE). The…”
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    Journal Article
  17. 17
  18. 18

    Study of porous III–V semiconductors by electron spectroscopies (AES and XPS) and optical spectroscopy (PL): Effect of ionic bombardment and nitridation process by Ben Khalifa, S., Gruzza, B., Robert-Goumet, C., Bideux, L., Monier, G., Saidi, F., M’Ghaieth, R., Hjiri, M., Hamila, R., Hassen, F., Maaref, H., Bremond, G., Bèji, L.

    Published in Surface science (15-09-2007)
    “…Electron spectroscopy (AES and XPS) and photoluminescence analysis (PL) were used to study porous layers elaborated by electrochemical etching of p-GaAs and…”
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    Journal Article Conference Proceeding
  19. 19

    Electrical properties study of double porous silicon layers: Conduction mechanisms by Jemai, R., Alaya, A., Meskini, O., Nouiri, M., Mghaieth, R., Khirouni, K., Alaya, S.

    “…The electrical conduction properties of a heterostructure based on a stacked double-layer porous silicon structure have been investigated. Two layers of porous…”
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    Journal Article
  20. 20

    Evidence of Poole-frenkel and Fowler-Nordheim tunneling transport mechanisms in leakage current of (Pd/Au)/Al0.22Ga0.78N/GaN heterostructures by Jabbari, I., Baira, M., Maaref, H., Mghaieth, R.

    Published in Solid state communications (01-07-2020)
    “…In this report, the gate leakage mechanism for AlGaN/GaN high electron mobility transistors (HEMTs) is consistently analyzed by means of temperature-dependent…”
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    Journal Article