Search Results - "Müting, J."

Lateral straggling of implanted aluminum in 4H-SiC by Müting, J., Bobal, V., Neset Sky, T., Vines, L., Grossner, U.

“…The implantation of aluminum into 4H-SiC is studied using secondary ion mass spectrometry. In particular, two-dimensional concentration profiles are obtained,…”
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Electrical charge state identification and control for the silicon vacancy in 4H-SiC by Bathen, M. E., Galeckas, A., Müting, J., Ayedh, H. M., Grossner, U., Coutinho, J., Frodason, Y. K., Vines, L.

“…Reliable single-photon emission is crucial for realizing efficient spin-photon entanglement and scalable quantum information systems. The silicon vacancy ( V…”
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