Search Results - "Münzhuber, F."

NV-center diamond cantilevers: Extending the range of available fabrication methods by Kleinlein, J., Borzenko, T., Münzhuber, F., Brehm, J., Kiessling, T., Molenkamp, L.W.

“…We present an alternative fabrication process for single crystal diamond cantilevers that consist of a platform carrying a nanopillar containing nitrogen…”
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Optical power-driven electron spin relaxation regime crossover in Mn-doped bulk GaAs by Münzhuber, F., Kiessling, T., Ossau, W., Molenkamp, L. W., Astakhov, G. V.

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Induced magnetic anisotropy in lifted (Ga,Mn)As thin films by Greullet, F., Ebel, L., Münzhuber, F., Mark, S., Astakhov, G. V., Kießling, T., Schumacher, C., Gould, C., Brunner, K., Ossau, W., Molenkamp, L. W.

“…We demonstrate the ability to release the growth-induced strain in (Ga,Mn)As layers and (In,Ga)As/(Ga,Mn)As bilayers by lifting them from the GaAs substrate…”
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Exciton decay dynamics controlled by impurity occupation in strongly Mn-doped and partially compensated bulk GaAs by Münzhuber, F., Henn, T., Kiessling, T., Ossau, W., Molenkamp, L. W., Gieseking, B., Astakhov, G. V., Dyakonov, V.

“…We report on a pronounced prolongation of the exciton decay in strongly p-doped and partially compensated direct band-gap semiconductor GaAs:Mn with increasing…”
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