Search Results - "M'foukh, Adel"

Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination by Pilotto, Alessandro, M'Foukh, Adel, Dollfus, Philippe, Saint-Martin, Jeriome, Pala, Marco G.

“…We present a full-band quantum transport model based on the Empirical Pseudopotential Method (EPM) that includes electron-phonon scattering and…”
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Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials by M’foukh, Adel, Saint-Martin, Jérôme, Dollfus, Philippe, Pala, Marco

“…We present a first-principles model to study tunnel transistors based on van der Waals heterojunctions of 2D materials in the presence of dissipative…”
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Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α ‑In2Se3 by Kremer, Geoffroy, Mahmoudi, Aymen, M’Foukh, Adel, Bouaziz, Meryem, Rahimi, Mehrdad, Della Rocca, Maria Luisa, Le Fèvre, Patrick, Dayen, Jean-Francois, Bertran, François, Matzen, Sylvia, Pala, Marco, Chaste, Julien, Oehler, Fabrice, Ouerghi, Abdelkarim

“…Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories due to their low energy consumption and high…”
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Full-Band Quantum Transport of Heterojunction Electron Devices With Empirical Pseudopotentials by M'foukh, Adel, Pala, Marco G., Esseni, David

“…This article presents the methodology, implementation, and application of a full-band quantum transport model based on the nonequilibrium Green's function…”
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Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α -In 2 Se 3 by Kremer, Geoffroy, Mahmoudi, Aymen, M’Foukh, Adel, Bouaziz, Meryem, Rahimi, Mehrdad, Della Rocca, Maria Luisa, Le Fèvre, Patrick, Dayen, Jean-Francois, Bertran, François, Matzen, Sylvia, Pala, Marco, Chaste, Julien, Oehler, Fabrice, Ouerghi, Abdelkarim

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Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric {\alpha}-In$_{2}$Se$_{3} by Kremer, Geoffroy, Mahmoudi, Aymen, M'Foukh, Adel, Bouaziz, Meryem, Rahimi, Mehrdad, Della Rocca, Maria Luisa, Fèvre, Patrick Le, Dayen, Jean-Francois, Bertran, François, Matzen, Sylvia, Pala, Marco, Chaste, Julien, Oehler, Fabrice, Ouerghi, Abdelkarim

“…Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and…”
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