Search Results - "Lv, W. M."

Two-dimensional superconductor-insulator quantum phase transitions in an electron-doped cuprate by Zeng, S. W., Huang, Z., Lv, W. M., Bao, N. N., Gopinadhan, K., Jian, L. K., Herng, T. S., Liu, Z. Q., Zhao, Y. L., Li, C. J., Harsan Ma, H. J., Yang, P., Ding, J., Venkatesan, T., Ariando

“…We use an ionic liquid-assisted electric-field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional…”
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Electronic transport properties of the charge ordered manganite-based heterojunction by Liang, S., Sun, J.R., Chen, Y.Z., Lv, W.M., Shen, B.G.

“…The charge ordered Bi 0.4Ca 0.4Sr 0.2MnO 3 (BCSMO) film has been grown on (011) SrTiO 3: Nb (STON) (0.05 wt%) substrate. The charge ordering (CO) transition is…”
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Variable range hopping in TiO2 insulating layers for oxide electronic devices by Zhao, Y. L., Lv, W. M., Liu, Z. Q., Zeng, S. W., Motapothula, M., Dhar, S., Ariando, Wang, Q., Venkatesan, T.

“…TiO2 thin films are of importance in oxide electronics, e.g., Pt/TiO2/Pt for memristors and Co-TiO2/TiO2/Co-TiO2 for spin tunneling devices. When such…”
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Low-temperature relaxation process and memory effect in a nonstoichiometric magnetite of Fe3―δO4 with δ=0.03 by XIANG, J. Y, LV, Y. F, WEN, F. S, HU, W. T, LV, W. M, LIU, Z. Y

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Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator by Zhou, W. X, Wu, H. J, Zhou, J, Zeng, S. W, Li, C. J, Li, M. S, Guo, R, Xiao, J. X, Huang, Z, Lv, W. M, Han, K, Yang, P, Li, C. G, Lim, Z. S, Wang, H, Zhang, Y, Chua, S. J, Zeng, K. Y, Venkatesan, T, Chen, J. S, Feng, Y. P, Pennycook, S. J, Ariando, A

“…Commun. Phys. 2, 125 (2019) Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some…”
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Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator by Zhou, W. X., Wu, H. J., Zhou, J., Zeng, S. W., Li, C. J., Li, M. S., Guo, R., Xiao, J. X., Huang, Z., Lv, W. M., Han, K., Yang, P., Li, C. G., Lim, Z. S., Wang, H., Zhang, Y., Chua, S. J., Zeng, K. Y., Venkatesan, T., Chen, J. S., Feng, Y. P., Pennycook, S. J., Ariando, A.

“…Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are…”
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Electron Accumulation and Emergent Magnetism in LaMnO3/SrTiO3 Heterostructures by Chen, Zuhuang, Chen, Zhanghui, Liu, Z. Q, Holtz, M. E, Li, C. J, Wang, X. Renshaw, Lv, W. M, Motapothula, M, Fan, L. S, Turcaud, J. A, Dedon, L. R, Frederick, C, Xu, R. J, Gao, R, NDiaye, A. T, Arenholz, E, Mundy, J. A, Venkatesan, T, Muller, D. A, Wang, L. -W, Liu, J, Martin, L. W

“…Emergent phenomena at polar-nonpolar oxide interfaces have been studied intensely in pursuit of next-generation oxide electronics and spintronics. Here we…”
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Antiferromagnetic superexchange interaction between Fe super(3+) ions in Fe super(3+) doped wide-gap oxide of beta -Ga sub(2-x)Fe sub(x)O sub(3) (x=0.1, 0.2, 0.3, 0.4) by Lv, Y F, Xiang, J Y, Wen, F S, Lv, W M, Hu, W T, Liu, Z Y

“…In the Fe super(3+) doped wide-gap oxide of beta -Ga sub(2_x)Fe sub(x)O sub(3) (x=0.1, 0.2, 0.3, 0.4), Rietveld refinements of the X-ray diffraction data show…”
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Two-dimensional superconductor-insulator quantum phase transitions in an electron-doped cuprate by Zeng, S. W, Huang, Z, Lv, W. M, Bao, N. N, Gopinadhan, K, Jian, L. K, Herng, T. S, Liu, Z. Q, Zhao, Y. L, Li, C. J, Ma, H. J. Harsan, Yang, P, Ding, J, Venkatesan, T, Ariando

“…Physical Review B 92, 020503(R) (2015) We use ionic liquid-assisted electric field effect to tune the carrier density in an electron-doped cuprate ultrathin…”
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Low-temperature relaxation process and memory effect in a nonstoichiometric magnetite of Fe sub(3- delta )O sub(4) with delta =0.03 by Xiang, J Y, Lv, Y F, Wen, F S, Hu, W T, Lv, W M, Liu, Z Y

“…The low-temperature relaxation process has been investigated in a nonstoichiometric magnetite Fe sub(3- delta )O sub(4) with delta =0.03. Far below the Verwey…”
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Antiferromagnetic superexchange interaction between Fe3+ ions in Fe3+ doped wide-gap oxide of β-Ga2−xFexO3 (x=0.1, 0.2, 0.3, 0.4) by Lv, Y.F., Xiang, J.Y., Wen, F.S., Lv, W.M., Hu, W.T., Liu, Z.Y.

“…In the Fe3+ doped wide-gap oxide of β-Ga2−xFexO3 (x=0.1, 0.2, 0.3, 0.4), Rietveld refinements of the X-ray diffraction data show that the Fe3+ ions are…”
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