Search Results - "Lutwyche, Mark I."

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  1. 1
    Property change of Si(111) surface by scanning tunneling microscope manipulation

    Property change of Si(111) surface by scanning tunneling microscope manipulation by HEIKE, S, HASHIZUME, T, WATANABE, S, LUTWYCHE, M. I, WADA, Y

    Published in Japanese Journal of Applied Physics (01-10-1996)
    “…Scanning tunneling microscopy (STM) has been used to form trench lines 0.2–0.6-nm deep and 10-nm wide by applying a high voltage and/or a large tunneling…”
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  2. 2
    Interaction of Ga adsorbates with dangling bonds on the hydrogen terminated Si(100) surface

    Interaction of Ga adsorbates with dangling bonds on the hydrogen terminated Si(100) surface by HASHIZUME, T, HEIKE, S, LUTWYCHE, M. I, WATANABE, S, NAKAJIMA, K, NISHI, T, WADA, Y

    Published in Japanese Journal of Applied Physics (15-08-1996)
    “…Adsorption of Ga on the hydrogen terminated Si(100)–2×1–H surface has been investigated by scanning tunneling microscopy (STM). We have found that the…”
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    Characterization of Dynamics in Materials Using Time-Resolved Electron Microscopy Incorporating Electron Counting and Electron Correlation Spectroscopy

    Characterization of Dynamics in Materials Using Time-Resolved Electron Microscopy Incorporating Electron Counting and Electron Correlation Spectroscopy by Osakabe, Nobuyuki, Kasai, Hiroto, Harada, Ken, Lutwyche, Mark I., Tonomura, Akira

    Published in Materials characterization (01-04-1999)
    “…Time-resolved electron microscopy incorporating electron counting and electron correlation spectroscopy can be used to quantify the dynamics in materials…”
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