Search Results - "Lunin, R. A."
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Superconductivity of Fullerides with Composition AGa $$_{x}$$ x C $$_{60}$$ 60 and AGa $$_{x}$$ x M $$_{y}$$ y C $$_{60}$$ 60 (A = K, Rb; M = In, Sn, Bi)
Published in Journal of low temperature physics (01-12-2016)“…The new heterofullerides with the composition AGa x C 60 and AGa x M y C 60 (A = K, Rb; M = In, Sn, Bi; x , y < 1 ) have been synthesized by a new method using…”
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Electron Mobilities and Effective Masses in InGaAs/InAlAs HEMT Structures with High In Content
Published in Journal of low temperature physics (01-12-2016)“…In x Ga 1 - x As/In y Al 1 - y As HEMT structures δ -doped by Si were grown by molecular beam epitaxy on InP substrate. We investigated the influence of the In…”
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Superconductivity, Electron Paramagnetic Resonance, and Raman Scattering Studies of Heterofullerides with Cs and Mg
Published in Advances in condensed matter physics (01-01-2008)“…In the present study, the results of investigation of physical properties of heterofullerides A3−xMxC60 (A=K, Rb, Cs, M=Be, Mg, Ca, Al, Fe, Tl, x=1,2); as well…”
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Superconductivity of Fullerides AnHgxC60 (A = K,Rb,Cs; n = 2,3) Synthesized from Amalgams
Published in Fullerenes, nanotubes, and carbon nanostructures (22-10-2010)“…The fullerides A n Hg x C 60 (A = K,Rb,Cs; n = 2,3; x<1) have been synthesized by a new method using liquid alloys of metals with mercury (amalgams). It was…”
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Quenching of persistent photoconductivity and decrease of electron concentration by high electric fields in GaAs delta-doped by Sn on vicinal substrate structures
Published in Physica. B, Condensed matter (01-03-1997)“…This paper reports the measurements of high electric field transport and the persistent photoconductivity in delta-doped by Sn on vicinal and singular…”
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Investigation of Paramagnetic Centers in Fullerides A2MC60 and AM2C60 (A = K, Rb, M = Mg, Be)
Published in Applied magnetic resonance (01-03-2008)“… Paramagnetic centers in heterofullerides with the composition A 2 MC 60 and AM 2 C 60 (A = K, Rb, M = Mg, Be) were investigated by the electron spin…”
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Negative persistent photoconductivity in GaAs (δ-Sn) structures
Published in Journal of experimental and theoretical physics (01-12-1999)Get full text
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2D metal slabs in new nickel-tin chalcogenides Ni(7-delta)SnQ(2) (Q=Se, Te): average crystal and electronic structures, chemical bonding and physical properties
Published in Journal of solid state chemistry (01-10-2004)“…A systematic search for mixed low-valence, nickel-tin chalcogenides performed by establishing phase relations in the parts of Ni-Sn-Se and Ni-Sn-Te ternary…”
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New insights into the plateau–insulator transition in the quantum Hall regime
Published in Physica. E, Low-dimensional systems & nanostructures (01-04-2004)“…We have measured the quantum critical behavior of the plateau–insulator (PI) transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal…”
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Superconductivity of Fullerides with Composition AGa\(_{x}\)C\(_{60}\) and AGa\(_{x}\)M\(_{y}\)C\(_{60}\) (A = K, Rb; M = In, Sn, Bi)
Published in Journal of low temperature physics (01-12-2016)“…The new heterofullerides with the composition AGa\(_{x}\)C\(_{60}\) and AGa\(_{x}\)M\(_{y}\)C\(_{60}\) (A = K, Rb; M = In, Sn, Bi; \(x,y<1\)) have been…”
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Superconductivity of heterofullerides with one or two atoms of the alkali metals and gallium, indium, bismuth or tin
Published in Polyhedron (14-12-2015)“…Temperature dependence of a magnetic susceptibility for new superconducting fullerides RbGaxC60 and RbGaxInyC60 with orthorhombic crystal lattice. The new…”
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Effect of thallium doping on the mobility of electrons in Bi2Se3 and holes in Sb2Te3
Published in Semiconductors (Woodbury, N.Y.) (01-07-2016)“…The Shubnikov–de Haas effect and the Hall effect in n -Bi 2– x Tl x Se 3 ( x = 0, 0.01, 0.02, 0.04) and p -Sb 2– x Tl x Te 3 ( x = 0, 0.005, 0.015, 0.05)…”
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Superconductivity of Fullerides with Composition AGaxC60 and AGaxMyC60 (A = K, Rb; M = In, Sn, Bi)
Published in Journal of low temperature physics (2016)“…The new heterofullerides with the composition AGa x C 60 and AGa x M y C 60 (A = K, Rb; M = In, Sn, Bi; x , y < 1 ) have been synthesized by a new method using…”
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Effect of thallium doping on the mobility of electrons in Bi{sub 2}Se{sub 3} and holes in Sb{sub 2}Te{sub 3}
Published in Semiconductors (Woodbury, N.Y.) (15-07-2016)“…The Shubnikov–de Haas effect and the Hall effect in n-Bi{sub 2–x}Tl{sub x}Se{sub 3} (x = 0, 0.01, 0.02, 0.04) and p-Sb{sub 2–x}Tl{sub x}Te{sub 3} (x = 0,…”
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Specific Features of Photoluminescence of InAs∕GaAs QD Structures at Different Pumping Levels
Published in Semiconductors (Woodbury, N.Y.) (2005)Get full text
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Electron magnetotransport in coupled quantum wells with double-sided doping
Published in Semiconductors (Woodbury, N.Y.) (01-11-2004)Get full text
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Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic In0.70Al0.30As/In0.76Ga0.24As/In0.70Al0.30As structures on GaAs substrates
Published in Semiconductors (Woodbury, N.Y.) (01-07-2015)“…The influence of construction of the buffer layer and misorientation of the substrate on the electrical properties of In 0.70 Al 0.30 As/In 0.76 Ga 0.24 As/In…”
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Quantum Hall effect-insulator transition in the InAs/GaAs system with quantum dots
Published in Physics of the solid state (01-04-2003)Get full text
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Electron transport in coupled quantum wells with double-Sided doping
Published in Semiconductors (Woodbury, N.Y.) (01-06-2003)Get full text
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Lateral electronic transport in short-period InAs/GaAs superlattices at the threshold of quantum dot formation
Published in Semiconductors (Woodbury, N.Y.) (01-01-2003)Get full text
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