Search Results - "Luna, E. López"
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Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy
Published in Applied surface science (01-04-2015)“…•The formation of different kind of nanostructures in GaMnAs layers depending on Mn concentration at relative HT-MBE is reported. In this Mn% range, it is…”
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Evaluation of nanoindentation characteristics of cubic InN epilayer grown by Molecular Beam Epitaxy
Published in Thin solid films (31-10-2021)“…•Cubic phase Indium nitride (c-InN) was grown by molecular beam epitaxy.•Nanoindentation was used to evaluate the mechanical properties of c-InN.•Hardness and…”
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Elastic modulus and hardness of cubic GaN grown by molecular beam epitaxy obtained by nanoindentation
Published in Thin solid films (01-04-2020)“…•Cubic phase gallium nitride (c-GaN) was grown by molecular beam epitaxy.•Nanoindentation was used to evaluate the mechanical properties of c-GaN.•Pop-in…”
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Complex refractive index of InXGa1-XN thin films grown on cubic (100) GaN/MgO
Published in Thin solid films (31-03-2017)“…Spectroscopic ellipsometry measurements of InXGa1-XN thin films were carried out in the photon energy range from 0.6 to 4.75eV. The samples were grown on cubic…”
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Effects of Mg incorporation in cubic GaN films grown by PAMBE near Ga rich conditions
Published in Materials science in semiconductor processing (01-04-2019)“…The structural and electrical properties of Mg-doped cubic GaN epi-layers grown by plasma-assisted molecular beam epitaxy (PAMBE) near Ga rich conditions are…”
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Structural and Raman studies of Ga2O3 obtained on GaAs substrate
Published in Materials science in semiconductor processing (01-01-2016)“…Ga2O3 were synthesized by controlled thermal oxidation of GaAs substrates at atmospheric pressure. The crystalline structure and vibrational modes were studied…”
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High-quality InN films on MgO (100) substrates: The key role of 30° in-plane rotation
Published in Applied physics letters (12-05-2014)“…High crystalline layers of InN were grown on MgO(100) substrates by gas source molecular beam epitaxy. Good quality films were obtained by means of an in-plane…”
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Thickness and photocatalytic activity relation in TiO2:N films grown by atomic layer deposition with methylene-blue and E. coli bacteria
Published in Bulletin of materials science (01-10-2017)“…This study presents an analysis of the photocatalytic efficiency in TiO 2 :N thin films grown by atomic layer deposition related to the film thickness. The…”
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Microcosm-based Study of the Attenuation of an Acid Mine Drainage-Impacted Site through Biological Sulfate and Iron Reduction
Published in Geomicrobiology journal (01-01-2009)“…Acid mine drainage is a widespread environmental problem and is characterized by elevated proton, sulfate, and dissolved iron concentrations. To understand the…”
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Control and Prevention of SARS-CoV-2 Outbreaks among Healthcare Workers from 129 Healthcare Facilities in Mexico
Published in International journal of environmental research and public health (10-11-2021)“…Few reports have shared the workflows to reduce SARS-CoV-2 infections among risk groups, including healthcare workers (HCWs). This study describes an…”
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Optical characterization of GaAs-based Schottky photovoltaic heterostructures with embedded III-N-V quantum wells
Published in Journal of materials science. Materials in electronics (01-09-2024)“…N-type GaAs photovoltaic heterostructures with embedded GaN x As 1-x /GaAs multi-quantum well nanostructures are proposed to develop a Schottky-junction…”
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Low energy shifted photoluminescence of Er3+ incorporated in amorphous hydrogenated silicon-germanium alloys
Published in Journal of non-crystalline solids (15-06-2009)Get full text
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GaAs surface oxide desorption by annealing in ultra high vacuum
Published in Thin solid films (03-09-2000)“…We have studied the desorption mechanism of Ga- and As-oxides on GaAs (100) by subjecting the substrates to two thermal processes in ultra high vacuum (UHV)…”
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Journal Article Conference Proceeding -
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Critical thickness as a function of the indium molar fraction in cubic InXGa1-XN and the influence in the growth of nanostructures
Published in Materials science in semiconductor processing (15-08-2020)“…The critical thickness for the relaxation of cubic (β) InXGa1-XN layers grown over (002) β-GaN/MgO, with different indium content, particularly of 17, 44, and…”
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Tuning emission in violet, blue, green and red in cubic GaN/InGaN/GaN quantum wells
Published in Journal of crystal growth (01-02-2016)“…Light emission in the three primary colors was achieved in cubic GaN/InGaN/GaN heterostructures grown by molecular beam epitaxy on MgO substrates in a single…”
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Bulk lattice parameter and band gap of cubic InXGa1−XN (001) alloys on MgO (100) substrates
Published in Journal of crystal growth (15-05-2015)“…InxGa1−xN (001) ternary alloys were grown on GaN/MgO (100) substrates in a plasma assisted molecular beam epitaxy system. We determined the in-plane [001] and…”
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Structural and Raman studies of Ga 2 O 3 obtained on GaAs substrate
Published in Materials science in semiconductor processing (01-01-2016)Get full text
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Low energy shifted photoluminescence of Er 3+ incorporated in amorphous hydrogenated silicon–germanium alloys
Published in Journal of non-crystalline solids (15-06-2009)“…Low energy shifted photoluminescence from isolated erbium ions incorporated into a-SiGe:H thin films is reported. The Er 3+ are thermally diffused from an…”
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Optical and structural properties of ZnSe/GaAs interfaces
Published in Applied surface science (01-03-1997)“…The results of high resolution X-ray diffraction clearly show that the strain in the ZnSe films is inhomogeneous and depends only on the film thickness and not…”
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Journal Article Conference Proceeding