Search Results - "Luna, E. López"

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    Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy by Del Río-De Santiago, A., Méndez-García, V.H., Martínez-Velis, I., Casallas-Moreno, Y.L., López-Luna, E., Yu Gorbatchev, A., López-López, M., Cruz-Hernández, E.

    Published in Applied surface science (01-04-2015)
    “…•The formation of different kind of nanostructures in GaMnAs layers depending on Mn concentration at relative HT-MBE is reported. In this Mn% range, it is…”
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    Journal Article
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    Evaluation of nanoindentation characteristics of cubic InN epilayer grown by Molecular Beam Epitaxy by Hernández, S.A. García, García, V.D. Compeán, Navarrete, E. Prado, Luna, E. López, Vidal, M.A.

    Published in Thin solid films (31-10-2021)
    “…•Cubic phase Indium nitride (c-InN) was grown by molecular beam epitaxy.•Nanoindentation was used to evaluate the mechanical properties of c-InN.•Hardness and…”
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    Journal Article
  3. 3

    Elastic modulus and hardness of cubic GaN grown by molecular beam epitaxy obtained by nanoindentation by García Hernández, S.A., Compeán García, V.D., López Luna, E., Vidal, M.A.

    Published in Thin solid films (01-04-2020)
    “…•Cubic phase gallium nitride (c-GaN) was grown by molecular beam epitaxy.•Nanoindentation was used to evaluate the mechanical properties of c-GaN.•Pop-in…”
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    Journal Article
  4. 4

    Complex refractive index of InXGa1-XN thin films grown on cubic (100) GaN/MgO by Vilchis, H., Compeán-García, V.D., Orozco-Hinostroza, I.E., López-Luna, E., Vidal, M.A., Rodríguez, A.G.

    Published in Thin solid films (31-03-2017)
    “…Spectroscopic ellipsometry measurements of InXGa1-XN thin films were carried out in the photon energy range from 0.6 to 4.75eV. The samples were grown on cubic…”
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    Journal Article
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    Effects of Mg incorporation in cubic GaN films grown by PAMBE near Ga rich conditions by Compeán-García, V.D., Moreno-García, H., López-Luna, E., Pérez Ladrón de Guevara, H., Escobosa Echavarría, A., Kudriavtsev, Y., Rodríguez-Aranda, F.J., Rodríguez, A.G., Vidal, M.A.

    “…The structural and electrical properties of Mg-doped cubic GaN epi-layers grown by plasma-assisted molecular beam epitaxy (PAMBE) near Ga rich conditions are…”
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    Journal Article
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    Structural and Raman studies of Ga2O3 obtained on GaAs substrate by Galván, C., Galván, M., Arias-Cerón, J.S., López-Luna, E., Vilchis, H., Sánchez-R, V.M.

    “…Ga2O3 were synthesized by controlled thermal oxidation of GaAs substrates at atmospheric pressure. The crystalline structure and vibrational modes were studied…”
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  7. 7

    High-quality InN films on MgO (100) substrates: The key role of 30° in-plane rotation by Compeán García, V. D., Orozco Hinostroza, I. E., Escobosa Echavarría, A., López Luna, E., Rodríguez, A. G., Vidal, M. A.

    Published in Applied physics letters (12-05-2014)
    “…High crystalline layers of InN were grown on MgO(100) substrates by gas source molecular beam epitaxy. Good quality films were obtained by means of an in-plane…”
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    Journal Article
  8. 8

    Thickness and photocatalytic activity relation in TiO2:N films grown by atomic layer deposition with methylene-blue and E. coli bacteria by Contreras Turrubiartes, M M M, López Luna, E, Enriquez-Carrejo, J L, Pedroza Rodriguez, A, Salcedo Reyes, J C, Vidal Borbolla, M A, Mani-Gonzalez, P G

    Published in Bulletin of materials science (01-10-2017)
    “…This study presents an analysis of the photocatalytic efficiency in TiO 2 :N thin films grown by atomic layer deposition related to the film thickness. The…”
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    Journal Article
  9. 9

    Microcosm-based Study of the Attenuation of an Acid Mine Drainage-Impacted Site through Biological Sulfate and Iron Reduction by Becerra, C. A., López-Luna, E. L., Ergas, S. J., Nüsslein, K.

    Published in Geomicrobiology journal (01-01-2009)
    “…Acid mine drainage is a widespread environmental problem and is characterized by elevated proton, sulfate, and dissolved iron concentrations. To understand the…”
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    Journal Article
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    GaAs surface oxide desorption by annealing in ultra high vacuum by Guillén-Cervantes, A, Rivera-Alvarez, Z, López-López, M, López-Luna, E, Hernández-Calderón, I

    Published in Thin solid films (03-09-2000)
    “…We have studied the desorption mechanism of Ga- and As-oxides on GaAs (100) by subjecting the substrates to two thermal processes in ultra high vacuum (UHV)…”
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    Journal Article Conference Proceeding
  14. 14

    Critical thickness as a function of the indium molar fraction in cubic InXGa1-XN and the influence in the growth of nanostructures by Compeán-García, V.D., Hernández-Vázquez, O., García-Hernández, S.A., Luna, E.López, Vidal, M.A.

    “…The critical thickness for the relaxation of cubic (β) InXGa1-XN layers grown over (002) β-GaN/MgO, with different indium content, particularly of 17, 44, and…”
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    Journal Article
  15. 15

    Tuning emission in violet, blue, green and red in cubic GaN/InGaN/GaN quantum wells by Orozco Hinostroza, I.E., Avalos-Borja, M., Compeán García, V.D., Zamora, C. Cuellar, Rodríguez, A.G., López Luna, E., Vidal, M.A.

    Published in Journal of crystal growth (01-02-2016)
    “…Light emission in the three primary colors was achieved in cubic GaN/InGaN/GaN heterostructures grown by molecular beam epitaxy on MgO substrates in a single…”
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    Journal Article
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    Bulk lattice parameter and band gap of cubic InXGa1−XN (001) alloys on MgO (100) substrates by Compeán García, V.D., Orozco Hinostroza, I.E., Escobosa Echavarría, A., López Luna, E., Rodríguez, A.G., Vidal, M.A.

    Published in Journal of crystal growth (15-05-2015)
    “…InxGa1−xN (001) ternary alloys were grown on GaN/MgO (100) substrates in a plasma assisted molecular beam epitaxy system. We determined the in-plane [001] and…”
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    Journal Article
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    Low energy shifted photoluminescence of Er 3+ incorporated in amorphous hydrogenated silicon–germanium alloys by López-Luna, E., Vidal, M.A., Rodríguez, A.G., Navarro-Contreras, H., Kudriavtsev, Y., Asomoza, R., Villegas, A.

    Published in Journal of non-crystalline solids (15-06-2009)
    “…Low energy shifted photoluminescence from isolated erbium ions incorporated into a-SiGe:H thin films is reported. The Er 3+ are thermally diffused from an…”
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    Journal Article
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    Optical and structural properties of ZnSe/GaAs interfaces by Garcı́a-Rocha, M, López-Luna, E, de Melo, O, Hernández-Calderón, I, Sitter, H, Andreev, A.Yu

    Published in Applied surface science (01-03-1997)
    “…The results of high resolution X-ray diffraction clearly show that the strain in the ZnSe films is inhomogeneous and depends only on the film thickness and not…”
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    Journal Article Conference Proceeding