Search Results - "Lukhmyrina, T. S."

Thermal Resistance of LEDs Based on a Narrow-Gap InAsSb Solid Solution by Zakgeim, A. L., Klimov, A. A., Lukhmyrina, T. S., Matveev, B. A., Chernyakov, A. E.

“…This paper examines the thermal resistance of the mid-infrared “flip-chip” LEDs based on the p ‑InAsSbP/ n -InAsSb heterostructure. It was shown that the…”
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On-Chip ATR Sensor (λ = 3.4 μm) Based on InAsSbP/InAs Double Heterostructure for the Determination of Ethanol Concentration in Aqueous Solutions by Karandashev, S. A., Klimov, A. A., Lukhmyrina, T. S., Matveev, B. A., Remennyi, M. A., Usikova, A. A.

“…We discuss photoelectrical properties of an on-chip attenuated total reflection (ATR) sensor for the ethanol concentration measurements in an aqueous solution…”
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On Heating Mechanisms in LEDs Based on p-InAsSbP/n-InAs(Sb) by Zakgeim, A. L., Karandashev, S. A., Klimov, A. A., Kunkov, R. E., Lukhmyrina, T. S., Matveev, B. A., Remennyi, M. A., Usikova, A. A., Chernyakov, A. E.

“…Three main reasons for a temperature increase in activated p -InAsSbP/ n -InAs/ n -InAsSbP and p -InAsSbP/ n -InAsSb/ n -InAs double heterostructures has been…”
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Longwave (λ0.1 = 10 μm, 296 K) Infrared Photodetectors Based on InAsSb0.38 Solid Solution by Kunkov, R. E., Klimov, A. A., Lebedeva, N. M., Lukhmyrina, T. S., Matveev, B. A., Remennyy, M. A., Usikova, A. A.

“…Photodetectors based on diode heterostracture with InAsSb x photosensitive region ( x = 0.38) with long-wave cut-off λ 0.1 about 10 μm (296 K) are…”
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On the Use of Indium Arsenide as the Waveguide Material in the Measurements by Attenuated Total Reflectance by Karandashev, S. A., Lukhmyrina, T. S., Matveev, B. A., Remennyi, M. A., Usikova, A. A.

“…The current–voltage characteristics and photocurrent of “monolithic” diode optical pairs optically coupled by a substrate made of InAs common for them are…”
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