Search Results - "Lugani, L."

n+ -GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts by Lugani, L., Malinverni, M., Tirelli, S., Marti, D., Giraud, E., Carlin, J.-F., Bolognesi, C. R., Grandjean, N.

“…We report on the low-temperature growth of heavily Si-doped (>1020 cm−3) n+-type GaN by N-rich ammonia molecular beam epitaxy (MBE) with very low bulk…”
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Photocapacitance spectroscopy of InAlN nearly lattice-matched to GaN by Lugani, L., Py, M. A., Carlin, J.-F., Grandjean, N.

“…We study the deep levels in InAlN nearly lattice-matched to GaN by photocapacitance spectroscopy. This technique allows the study of very deep levels having…”
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Modeling of InAs-InSb nanowires grown by Au-assisted chemical beam epitaxy by Lugani, L, Ercolani, D, Sorba, L, Sibirev, N V, Timofeeva, M A, Dubrovskii, V G

“…Interesting phenomena during the Au-assisted chemical beam epitaxy of InAs-InSb nanowire heterostructures have been observed and interpreted within the…”
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Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures by Lugani, L., Carlin, J.-F., Py, M. A., Grandjean, N.

“…We investigate the thermal stability of nearly lattice-matched InAlN layers under metal organic vapor phase epitaxy conditions for temperatures >800 °C and…”
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Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN–GaN metal oxide semiconductor high electron mobility transistors on Si substrates by Alexewicz, A., Ostermaier, C., Henkel, C., Bethge, O., Carlin, J.-F., Lugani, L., Grandjean, N., Bertagnolli, E., Pogany, D., Strasser, G.

“…We present enhancement-mode GaN high electron mobility transistors on Si substrates with ZrO2 gate dielectrics of thicknesses tox between 10 and 24nm. The…”
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Ultrathin Body InAlN/GaN HEMTs for High-Temperature (600 ^ ) Electronics by Herfurth, P., Maier, D., Lugani, L., Carlin, Jean-Francois, Rosch, R., Men, Y., Grandjean, N., Kohn, E.

“…Lattice matched 0.25-μm gatelength InAlN/GaN high electron mobility transistors are realized in an ultrathin body mesa technology (50-nm AlN nucleation…”
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Explanation of threshold voltage scaling in enhancement-mode InAIN/AIN-GaN metal oxide semiconductor high electron mobility transistors on Si substrates by ALEXEWICZ, A, OSTERMAIER, C, HENKEL, C, BETHGE, O, CARLIN, J.-F, LUGANI, L, GRANDJEAN, N, BERTAGNOLLI, E, POGANY, D, STRASSER, G

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High-frequency modulation of bound-to-continuum Terahertz quantum cascade lasers up to 24GHz by Maineult, W., Ding, L., Gellie, P., Lugani, L., Filloux, P., Sirtori, C., Barbieri, S., Guilet, S., Braive, R., Sagne, I., Beere, H.E., Ritchie, D.A.

“…We report on the high frequency modulation of terahertz (THz) quantum cascade lasers (QCLs). By resonantly enhancing the frequency response of the RF biasing…”
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