Search Results - "Ludeke, R."

Local transport and trapping issues in Al2O3 gate oxide structures by Ludeke, R., Cuberes, M. T., Cartier, E.

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Electrical characterization of gate oxides by scanning probe microscopies by Ludeke, R.

“…Ballistic electron emission microscopy (BEEM) and non-contact atomic force microscopy (NC-AFM) are used to characterize SiO2 and Al2O3 layers grown on Si(100)…”
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Imaging of trapped charge in SiO2 and at the SiO2–Si interface by Ludeke, R., Cartier, E.

“…Charged defects in SiO2 and at the SiO2–Si(111) interface were imaged with a noncontact atomic force microscope. Electrons and holes trapped at interfacial Pb…”
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Electrostatic Field and Partial Fermi Level Pinning at the Pentacene−SiO2 Interface by Chen, Liwei, Ludeke, R, Cui, Xiaodong, Schrott, Alejandro G, Kagan, Cherie R, Brus, Louis E

“…Monolayer islands of pentacene deposited on silicon substrates with thermally grown oxides were studied by electric force microscopy (EFM) and scanning Kelvin…”
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Novel transport effects in high-bias ballistic-electron-emission spectroscopy by LUDEKE, R

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Hot electron scattering processes in metal films and at metal-semiconductor interfaces by LUDEKE, R, BAUER, A

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Potential imaging of Si∕HfO2/polycrystalline silicon gate stacks: Evidence for an oxide dipole by Ludeke, R., Narayanan, V., Gusev, E. P., Cartier, E., Chey, S. J.

“…Surface potential profiles of the junction area of a cleaved n-Si(100)∕HfO2∕p+-polycrystalline silicon (poly-Si) gate stack reveal a dipole potential in the…”
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Determination of the energy-dependent conduction band mass in SiO2 by Ludeke, R., Cartier, E., Schenk, Andreas

“…The energy dependence of the conduction band mass in amorphous SiO2 was deduced from quantum interference oscillations in the ballistic electron emission…”
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Ballistic-electron-emission microscopy and spectroscopy of GaP(110)-metal interfaces by PRIETSCH, M, LUDEKE, R

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Imaging of oxide and interface charges in SiO2-Si by LUDEKE, R, CARTIER, E

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Hot electron transport in SiO2 probed with a scanning tunnel microscope by Ludeke, R., Bauer, A., Cartier, E.

“…Hot electrons injected with a scanning tunnel microscope (STM) tip into Pt/SiO2/Si(100) structures were detected as a collector current in the Si by using a…”
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Density of states and hot electron effects in ballistic electron emission spectroscopy by Ludeke, R.

“…Ballistic electron emission microscopy (BEEM) and BEEM spectroscopy are reported for thin (≊50 Å) Cr layers on n‐type GaP(110). BEEM images reveal that current…”
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Localized degradation studies of ultrathin gate oxides by Wen, H. J., Ludeke, R.

“…We present studies on the limits of oxide reliability on a local, microscopic scale, using scanning tunneling microscope (STM)-based ballistic electron…”
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Quantum interference in SiO2: A conduction-band mass reappraisal by Ludeke, R., Wen, H. J., Schenk, Andreas

“…Quantum oscillations arising from interference in over-the-barrier injected electrons crossing a metal–oxide–semiconductor structure were observed for a 2.8 nm…”
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Direct determination of impact ionization quantum yield in Si by ballistic-electron-emission microscopy by Bauer, A, Ludeke, R

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Localized electron trapping and trap distributions in SiO2 gate oxides by Ludeke, R., Wen, H. J.

“…Localized trap filling and trap creation in SiO2 were investigated by injecting electrons into metal-oxide-semiconductor structures with a scanning tunneling…”
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Ballistic electron emission spectroscopy of metals on GaP(110) by Ludeke, R., Prietsch, M., Samsavar, A.

“…Ballistic electron emission spectroscopy (BEES), a technique based on the scanning tunneling microscope (STM), was used to measure Schottky barrier heights of…”
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Hot electron scattering effects in metal–semiconductor structures and their role in interface transport by Ludeke, R., Bauer, A.

“…The spectroscopy mode of ballistic electron emission microscopy was used to study the thickness dependence of the collector current I c for 8–90 Å thick Pd…”
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Ballistic electron emission spectroscopy of noble metal–GaP(110) interfaces by Ludeke, R., Prietsch, M.

“…Ballistic electron emission microscopy (BEEM) was used in an UHV environment to investigate the current–voltage spectra of Cu, Ag, and Au films on cleaved…”
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Electrical transport properties of hot electrons at metal, insulator, and semiconductor interfaces by Ludeke, R., Bauer, A.

“…The application of ballistic electron emission microscopy (BEEM) to study hot electron transport phenomena over a kinetic energy range of 0–8 eV is discussed…”
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