Search Results - "Lucovsky, G"

Application of bond constraint theory to the switchable optical memory material Ge2Sb2Te5 by Baker, D A, Paesler, M A, Lucovsky, G, Agarwal, S C, Taylor, P C

“…A new extended x-ray-absorption fine structure spectroscopy study of local bonding identifies for the first time significant concentrations of Ge-Ge bonds in…”
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Self-organization and the physics of glassy networks by Boolchand, P., Lucovsky, G., Phillips, J. C., Thorpe, M. F.

“…Network glasses are the physical prototype for many self-organized systems, ranging from proteins to computer science. Conventional theories of gases, liquids…”
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Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys by Lucovsky, G., Rayner, G. B.

“…Dielectric constants, k, of Zr(Hf) silicate alloy gate dielectrics obtained from analysis of capacitance–voltage curves of metal–oxide–semiconductor capacitors…”
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First demonstration of device-quality symmetric N-MOS and P-MOS capacitors on p-type and n-type crystalline Ge substrates by Lucovsky, G., Kim, J.W., Nordlund, D.

“…•Ge interface nitride passivation.•Si passivation layer thickness.•SiON surface on Si passivation layer.•Anneal to eliminate Ge–N bonds.•Symmetric NMOS and…”
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Process-dependent band structure changes of transition-metal (Ti,Zr,Hf) oxides on Si (100) by Fulton, C. C., Lucovsky, G., Nemanich, R. J.

“…In this study, we have deposited Ti, Zr, and Hf oxides on ultrathin (∼0.5 nm) SiO2 buffer layers and have identified metastable states which give rise to large…”
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Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects by Lucovsky, G.

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Remote plasma-processing (RPP), medium range order, and precursor sites for dangling bond defects in “amorphous-Si(H)” alloys: Photovoltaic and thin film transistor devices by Lucovsky, G., Zeller, D.J., Cheng, C., Zhang, Y.

“…Remote plasma processing (RPP) provides pathways to the formation of photovoltaic (PV) and thin-film-transistor (TFT) devices that include buried interfaces…”
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Band alignment between (100)Si and complex rare earth∕transition metal oxides by Afanas’ev, V. V., Stesmans, A., Zhao, C., Caymax, M., Heeg, T., Schubert, J., Jia, Y., Schlom, D. G., Lucovsky, G.

“…The electron energy band alignment between (100)Si and several complex transition∕rare earth (RE) metal oxides (LaScO3, GdScO3, DyScO3, and LaAlO3, all in…”
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Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon by Edge, L. F., Schlom, D. G., Brewer, R. T., Chabal, Y. J., Williams, J. R., Chambers, S. A., Hinkle, C., Lucovsky, G., Yang, Y., Stemmer, S., Copel, M., Holländer, B., Schubert, J.

“…Amorphous LaAlO3 thin films have been deposited by molecular beam deposition directly on silicon without detectable oxidation of the underlying substrate. We…”
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Correlations between electronic structure of transition metal atoms and performance of high-k gate dielectrics in advanced Si devices by Lucovsky, G.

“…This paper develops a classification scheme for non-crystalline dielectrics that separates them into three groups with different amorphous morphologies, and…”
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Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces : A pathway for formation of n-MOS devices on Ge substrates by LUCOVSKY, G, LEE, S, LONG, J. P, SEO, H, LÜNING, J

“…The contribution from relatively low-K SiON interfacial transition regions (ITRs) between Si and transition metal (TM) gate dielectrics places a significant…”
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Radiation effects in new materials for nano-devices by Schrimpf, R.D., Fleetwood, D.M., Alles, M.L., Reed, R.A., Lucovsky, G., Pantelides, S.T.

“…Introduction of new materials and device structures has a significant impact on radiation response. For some devices, the response may be dominated by the…”
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Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics by Lucovsky, G., Wu, Y., Niimi, H., Misra, V., Phillips, J. C.

“…An increasingly important issue in semiconductor device physics is understanding of how departures from ideal bonding at silicon–dielectric interfaces generate…”
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O-vacancies in transition metal (TM) oxides: Coordination and local site symmetry of transition and negative ion states in TM2O3 and TMO2 oxides by LUCOVSKY, G, ZELLER, D, WHITTEN, J. L

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Nonlinear composition dependence of x-ray photoelectron spectroscopy and Auger electron spectroscopy features in plasma-deposited zirconium silicate alloy thin films by Rayner, G. B., Kang, D., Zhang, Y., Lucovsky, G.

“…The local bonding of Zr, Si, and O atoms in plasma-deposited, and post-deposition annealed Zr silicate pseudobinary alloys [( ZrO 2 ) x ( SiO 2 ) 1−x ] was…”
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Atomic structure and thermal stability of silicon suboxides in bulk thin films and in transition regions at Si–SiO2 interfaces by Lucovsky, G

“…This paper treats three aspects of silicon suboxides, SiOx, x<2: (i) the local atomic structure in lightly-hydrogenated low-temperature plasma-deposited SiOx:H…”
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Nitrogen bonding, stability, and transport in AlON films on Si by Soares, G. V., Bastos, K. P., Pezzi, R. P., Miotti, L., Driemeier, C., Baumvol, I. J. R., Hinkle, C., Lucovsky, G.

“…The chemical environment of N in nitrided aluminum oxide films on Si(001) was investigated by angle-resolved x-ray photoelectron spectroscopy. Two different…”
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Multipactor Coating for Sapphire RF Windows Using Remote Plasma-Assisted Deposition by Ives, R. L., Zeller, D., Lucovsky, G., Schamiloglu, E., Marsden, D., Collins, G., Nichols, K., Karimov, R.

“…Traditional application of multipactor coatings applied with sputtering techniques to high-power RF windows typically performs well when applied to sintered…”
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Spectroscopic characterization of high k dielectrics: Applications to interface electronic structure and stability against chemical phase separation by Krug, C., Lucovsky, G.

“…Extensive spectroscopic characterization of high k materials under consideration for replacing Si oxide as the gate dielectric in Si-based microelectronic…”
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Microscopic bonding and macroscopic strain relaxations at Si-SiO 2 interfaces by Lucovsky, G., Phillips, J.C.

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