Search Results - "Lubyshev, D.I."

Molecular-beam epitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs by González-Borrero, P.P., Marega, E., Lubyshev, D.I., Petitprez, E., Basmaji, P.

“…In this paper we report optical properties of InAs quantum dots (QD) grown by molecular-beam epitaxy on GaAs (2 1 1)A, (n 1 1) A B , where n is 1, 5 and 7, and…”
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Self-organized InGaAs quantum dots grown by molecular beam epitaxy on (100), [formula omitted], [formula omitted], [formula omitted], [formula omitted], and [formula omitted] oriented GaAs by González-Borrero, P.P., Lubyshev, D.I., Marega, E., Petitprez, E., Basmaji, P.

“…In this paper, we report optical properties of InGaAs quantum dots grown by molecular beam epitaxy on GaAs (n11) A B , where n is 1, 2, 3, 5 and 7, and…”
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Static phase diagrams of reconstructions for MBE-grown GaAs(001) and AlAs(001) surfaces by Regiński, K., Muszalski, J., Preobrazhenskii, V.V., Lubyshev, D.I.

“…Static phase diagrams for GaAs(001) and AlAs(001) surfaces have been determined using the reflection high-energy electron diffraction technique. The…”
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Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy by Zanelato, G., Pusep, Yu.A., Galzerani, J.C., Lubyshev, D.I., González-Borrero, P.P.

“…The Raman spectra of the optical confined phonons in the GaAs/AlAs ultra-thin layer superlattices grown with different growth conditions were used to determine…”
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The effect of the MBE growth rate on the surface phase diagram for GaAs (001) by Preobrazhenskii, V.V., Lubyshev, D.I., Regiński, K., Muszalski, J.

“…The molecular beam epitaxy phase diagrams for the GaAs(001) surface have been determined using the reflection high-energy electron diffraction technique. The…”
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Charge capture in [formula omitted] heterostructures with disordered antidot lattice by Basmaji, P., Gusev, G.M., Lubyshev, D.I., de P.A. Silva, M., Rossi, J.C., Nastaushev, Yu.V., Baklanov, M.R.

“…We have observed hot electron trapping by DX centers in a mesoscopic sample with disordered antidot lattice. Depending on the maximum applied electric field…”
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Commercial production of QWIP wafers by molecular beam epitaxy by Fastenau, J.M, Liu, W.K, Fang, X.M, Lubyshev, D.I, Pelzel, R.I, Yurasits, T.R, Stewart, T.R, Lee, J.H, Li, S.S, Tidrow, M.Z

“…As the performance of quantum well infrared photodetectors (QWIPs) and QWIP-based imaging systems continues to improve, their demand will undoubtedly grow…”
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Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates by Petitprez, E, González-Borrero, P.P, Lubyshev, D.I, Marega, E, Basmaji, P

“…The optical properties of vertically stacked InAs island layers grown by molecular beam epitaxy on (311)A/B and (001) GaAs substrates have been studied by…”
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Magnetoresistance oscillations in a dimpled two-dimensional electron gas by Gusev, G.M., Gennser, U., Kleber, X., Maude, D.K., Portal, J.C., Lubyshev, D.I., Basmaji, P., de P.A. Silva, M., Rossi, J.C., Nastaushev, Yu.V.

“…We report on magnetoresistance measurements of a two-dimensional electron gas (2DEG) grown on dimpled substrates. As the 2DEG is sensitive only to the normal…”
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Production of next generation InP-HBT epiwafers by MBE by Lubyshev, D.I., Malis, O., Teker, K., Wu, Y., Fastenau, J.M., Fang, X.-M., Doss, C., Cornfeld, A.B., Liu, W.K.

“…The current status of InP-based HBT epiwafer production using multi-wafer MBE systems at IQE Inc. is presented. Control and stability of critical material…”
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Absence of delocalised states in a 2D electron gas in a magnetic field below ωcτ=1 by Gusev, G.M., Gennser, U., Kleber, X., Maude, D.K., Portal, J.C., Lubyshev, D.I., Basmaji, P., Silva, M.De.P.A., Rossi, J.C., Nastaushev, Yu.V.

“…The quantum Hall liquid-Hall insulator transition has been studied using a gate-controlled periodical lattice of antidots. This system allows us to probe deep…”
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Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces by Marega, E, Libardi, A.L, Lubyshev, D.I, Gonzalez–Borrero, P.P, Basmaji, P

“…In this work we have investigated the temperature dependence of photoluminescence (PL) properties of GaAs/AlAs ultrathin-layer superlattices (UTLS) grown by…”
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Incorporation of thallium in InTlAs and GaTlAs grown by molecular beam epitaxy by Lubyshev, D.I., Cai, W.Z., Catchen, G.L., Mayer, T.S., Miller, D.L.

“…Thallium incorporation in GaTlAs and InTlAs was systematically studied in solid source MBE by RHEED, Auger Electron Spectroscopy and X-ray diffraction as…”
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Atomic-scale characterization of interfaces in the GaAs/AlGaAs superlattices by Pusep, Yu.A., da Silva, S.W., Galzerani, J.C., Lubyshev, D.I., Basmaji, P., Milekhin, A.G., Preobrazhenskii, V.V., Semyagin, B.R., Marahovka, I.I.

“…We present a new interpretation of the Raman spectra of GaAs/AlAs ultrathin-layer superlattices based on the microscopic analysis of the optical vibrational…”
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Oscillation of the scattering time in a 2D electron system with oval antidots by Gusev, G.M, Kleber, X, Gennser, U, Maude, D.K, Portal, J.C, Lubyshev, D.I, Basmaji, P, Silva, M.de P.A, Rossi, J.C, Nastaushev, Yu.V, Baklanov, M.R

“…Electron scattering by a single barrier is predicted to reveal singularities as the magnetic field is changed, because the number of electron collisions with…”
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MBE growth of near-infrared InGaAs photodetectors with carbon tetrabromide as a p-type dopant by Lubyshev, D.I., Neal, J., Cai, W.Z., Micovic, M., Mayer, T.S., Miller, D.L.

“…The carbon doping of In/sub x/Ga/sub 1-x/As was systematically studied as a function of carbon tetrabromide flux and indium molar fraction. The efficiency of…”
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Demonstration of a GaAs-based compliant substrate using wafer bonding and substrate removal techniques by Zhang, C., Lubyshev, D.I., Cai, W., Neal, J.E., Miller, D.L., Mayer, T.S.

“…A GaAs-based compliant substrate that uses an intermediate AlGaAs-oxide layer to separate thin 150 /spl Aring/-1000 A GaAs compliant layers from a GaAs host…”
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Optical properties of vertically aligned self-assembled InGaAs quantum dot layers on (311)A/B and (100) GaAs substrates by González-Borrero, P.P., Lubyshev, D.I., Marega Jr, E., Petitprez, E., Basmaji, P.

“…In this work, we present substrate orientation effects on optical properties in vertically stacked In0.5Ga0.5As layers grown by molecular beam epitaxy on…”
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Optical properties of self-assembled InAs quantum dots on high-index GaAs substrates by González-Borrero, P.P., Marega, E., Lubyshev, D.I., Petitprez, E., Basmaji, P.

“…In this work we have studied the optical properties of InAs quantum dots (QDs) grown by molecular-beam epitaxy on GaAs (211)A, on (n11)A/B (where n is 1, 5 and…”
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Magneto-oscillations in a trapezoidal two-dimensional electron gas grown over GaAs wires by Gusev, G.M., La Scala Jr, N., Lubyshev, D.I., González-Borrero, P.P., da Silva, M.A.P., Basmaji, P., Rossi, J.C., Portal, J.C.

“…In this work we investigate a nonplanar two-dimensional electron gas (2DEG) that allows study of the electronic behaviour in random and sign-alternating…”
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