Search Results - "Lu, Weifang"

n-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centers by Han, Dong-Pyo, Fujiki, Ryoto, Takahashi, Ryo, Ueshima, Yusuke, Ueda, Shintaro, Lu, Weifang, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

“…In this study, we attempt to identify the presence of surface defects (SDs) at an n-type GaN surface after high-temperature growth and gain insight into their…”
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Temperature-dependent photoluminescence properties of porous fluorescent SiC by Lu, Weifang, Tarekegne, Abebe T., Ou, Yiyu, Kamiyama, Satoshi, Ou, Haiyan

“…A comprehensive study of surface passivation effect on porous fluorescent silicon carbide (SiC) was carried out to elucidate the luminescence properties by…”
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Color-tunable emission in coaxial GaInN/GaN multiple quantum shells grown on three-dimensional nanostructures by Lu, Weifang, Ito, Kazuma, Sone, Naoki, Okuda, Renji, Miyamoto, Yoshiya, Iwaya, Motoaki, Tekeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

“…[Display omitted] •Emission wavelength from 415 nm to 600 nm were achieved in GaInN/GaN MQS nanostructures.•Diffusion of precursors on SiO2 mask area plays an…”
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Non-polar true-lateral GaN power diodes on foreign substrates by Wang, Jia, Yu, Guo, Zong, Hua, Liao, Yaqiang, Lu, Weifang, Cai, Wentao, Hu, Xiaodong, Xie, Ya-Hong, Amano, Hiroshi

“…We have demonstrated non-polar GaN power diodes (Schottky barrier diode and p–n junction diode) on foreign substrates featuring the true-lateral p–n and…”
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Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3 by Lu, Weifang, Iwasa, Yoshimi, Ou, Yiyu, Jinno, Daiki, Kamiyama, Satoshi, Petersen, Paul Michael, Ou, Haiyan

“…Porous silicon carbide (B-N co-doped SiC) produced by anodic oxidation showed strong photoluminescence (PL) at around 520 nm excited by a 375 nm laser. The…”
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Superlattice-Induced Variations in Morphological and Emission Properties of GaInN/GaN Multiquantum Nanowire-Based Micro-LEDs by Inaba, Soma, Lu, Weifang, Ito, Kazuma, Katsuro, Sae, Nakayama, Nanami, Shima, Ayaka, Jinno, Yukimi, Yamamura, Shiori, Sone, Naoki, Huang, Kai, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi

“…Core–shell GaInN/GaN multiquantum shell (MQS) nanowires (NWs) are gaining great attention for high-efficiency micro-light-emitting diodes (micro-LEDs) owing to…”
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Morphology Control and Crystalline Quality of p‑Type GaN Shells Grown on Coaxial GaInN/GaN Multiple Quantum Shell Nanowires by Lu, Weifang, Nakayama, Nanami, Ito, Kazuma, Katsuro, Sae, Sone, Naoki, Miyamoto, Yoshiya, Okuno, Koji, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

“…The morphology and crystalline quality of p-GaN shells on coaxial GaInN/GaN multiple quantum shell (MQS) nanowires (NWs) were investigated using metal–organic…”
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Efficiency Enhancement Mechanism of an Underlying Layer in GaInN‐Based Green Light–Emitting Diodes by Han, Dong-Pyo, Ishimoto, Seiji, Mano, Ryoya, Lu, Weifang, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

“…To investigate the mechanism of efficiency enhancement achieved by introducing underlying layers (ULs) in green light–emitting diodes (LEDs), this study…”
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MOVPE growth of n-GaN cap layer on GaInN/GaN multi-quantum shell LEDs by Goto, Nanami, Sone, Naoki, Iida, Kazuyoshi, Lu, Weifang, Suzuki, Atsushi, Murakami, Hideki, Terazawa, Mizuki, Ohya, Masaki, Kamiyama, Satoshi, Takeuchi, Tetsuya, Iwaya, Motoaki, Akasaki, Isamu

“…•Growth of an embedded n-GaN cap layer on nanowires was investigated.•At a high temperature, the growth rate on a semi-polar r-plane decreased.•At a high…”
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Suppression of (0001) plane emission in GaInN/GaN multi-quantum nanowires for efficient micro-LEDs by Katsuro, Sae, Lu, Weifang, Ito, Kazuma, Nakayama, Nanami, Yamamura, Shiori, Jinno, Yukimi, Inaba, Soma, Shima, Ayaka, Sone, Naoki, Han, Dong-Pyo, Huang, Kai, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi

“…GaInN/GaN multi-quantum-shell (MQS) nanowires (NWs) are gaining increasing attention as promising materials for developing highly efficient long-wavelength…”
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Germanium n+/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing by Wang, Chen, Li, Cheng, Lin, Guangyang, Lu, Weifang, Wei, Jiangbin, Huang, Wei, Lai, Hongkai, Chen, Songyan, Di, Zengfeng, Zhang, Miao

“…A germanium n + /p shallow junction formed by a combination of low-temperature preannealing (LTPA) and excimer laser annealing at a low fluence of 150 mJ/cm 2…”
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Analysis of impurity doping in tunnel junction grown on core–shell structure composed of GaInN/GaN multiple-quantum-shells and GaN nanowire by Sone, Naoki, Jinno, Daiki, Miyamoto, Yoshiya, Okuda, Renji, Yamamura, Shiori, Jinno, Yukimi, Lu, Weifang, Han, Dong-Pyo, Okuno, Koji, Mizutani, Koichi, Nakajima, Satoru, Koyama, Jun, Ishimura, Satoshi, Mayama, Norihito, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

“…Abstract This study aimed to investigate and analyze the impurity doping characteristics in tunnel junctions (TJs) grown on core–shell structures, comprising…”
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Dimension dependence of current injection path in GaInN/GaN multi-quantum-shell (MQS) nanowire-based light-emitting diode arrays by Katsuro, Sae, Lu, Weifang, Ito, Kazuma, Nakayama, Nanami, Inaba, Soma, Shima, Ayaka, Yamamura, Shiori, Jinno, Yukimi, Sone, Naoki, Huang, Kai, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi

“…To light emitting diodes (LEDs), solving the common non-uniform current injection and efficiency degradation issues in (0001) plane micro-LED is essential…”
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Identification of multi-color emission from coaxial GaInN/GaN multiple-quantum-shell nanowire LEDs by Ito, Kazuma, Lu, Weifang, Katsuro, Sae, Okuda, Renji, Nakayama, Nanami, Sone, Naoki, Mizutani, Koichi, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

“…Multi-color emission from coaxial GaInN/GaN multiple-quantum-shell (MQS) nanowire-based light-emitting diodes (LEDs) was identified. In this study, MQS…”
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Development of Monolithically Grown Coaxial GaInN/GaN Multiple Quantum Shell Nanowires by MOCVD by Ito, Kazuma, Lu, Weifang, Sone, Naoki, Miyamoto, Yoshiya, Okuda, Renji, Iwaya, Motoaki, Tekeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

“…Broadened emission was demonstrated in coaxial GaInN/GaN multiple quantum shell (MQS) nanowires that were monolithically grown by metalorganic chemical vapor…”
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Structural and optical impacts of AlGaN undershells on coaxial GaInN/GaN multiple-quantum-shells nanowires by Lu, Weifang, Terazawa, Mizuki, Han, Dong-Pyo, Sone, Naoki, Goto, Nanami, Iida, Kazuyoshi, Murakami, Hedeki, Iwaya, Motoaki, Tekeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

“…The superior crystalline quality of coaxial GaInN/GaN multiple-quantum shell (MQS) nanowires (NWs) was demonstrated by employing an AlGaN undershell during…”
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Characterizations of GaN nanowires and GaInN/GaN multi-quantum shells grown by MOVPE by Goto, Nanami, Lu, Weifang, Murakami, Hideki, Terazawa, Mizuki, Uzuhashi, Jun, Ohkubo, Tadakatsu, Hono, Kazuhiro, Kamiyama, Satoshi, Takeuchi, Tetsuya, Iwaya, Motoaki, Akasaki, Isamu

“…Structural characterizations of core–shell type nanowire-based materials are difficult because of their tiny 3D structure. In this paper, we prepared the…”
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Fabrication and surface passivation of porous 6H-SiC by atomic layer deposited films by Lu, Weifang, Ou, Yiyu, Petersen, Paul Michael, Ou, Haiyan

“…Porous 6H-SiC samples with different thicknesses were fabricated through anodic etching in diluted hydrofluoric acid. Scanning electron microscope images show…”
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Emission characteristics of GaInN/GaN multiple quantum shell nanowire-based LEDs with different p-GaN growth conditions by Katsuro, Sae, Lu, Weifang, Ito, Kazuma, Nakayama, Nanami, Sone, Naoki, Okuno, Koji, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

“…Improving current injection into - and -planes of nanowires (NWs) is essential to realizing efficient GaInN/GaN multiple quantum shell (MQS) NW-based…”
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Formation of nickel germanide on SiO2-capped n-Ge to lower its Schottky barrier height by Lin, Guangyang, Tang, Mengrao, Li, Cheng, Huang, Shihao, Lu, Weifang, Wang, Chen, Yan, Guangming, Chen, Songyan

“…In this Letter, NiGe/SiO2/n-Ge ohmic contacts were demonstrated with Ge, rather than Ni, diffusion through the ion-implanted SiO2 films to form NiGe. The…”
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