Search Results - "Lu, Tai"

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    A highly CMOS compatible hafnia-based ferroelectric diode by Luo, Qing, Cheng, Yan, Yang, Jianguo, Cao, Rongrong, Ma, Haili, Yang, Yang, Huang, Rong, Wei, Wei, Zheng, Yonghui, Gong, Tiancheng, Yu, Jie, Xu, Xiaoxin, Yuan, Peng, Li, Xiaoyan, Tai, Lu, Yu, Haoran, Shang, Dashan, Liu, Qi, Yu, Bing, Ren, Qiwei, Lv, Hangbing, Liu, Ming

    Published in Nature communications (13-03-2020)
    “…Memory devices with high speed and high density are highly desired to address the ‘memory wall’ issue. Here we demonstrated a highly scalable,…”
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    Bayesian Linear Regression With Cauchy Prior and Its Application in Sparse MIMO Radar by Li, Jun, Wu, Ryan, Lu, I-Tai, Ren, Dongyin

    “…In this article, a sparse signal recovery algorithm using Bayesian linear regression with Cauchy prior (BLRC) is proposed. Utilizing an approximate expectation…”
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    Identification and immune landscape analysis of fatty acid metabolism genes related subtypes of gastric cancer by Huang, Rong, Lu, Tai-Liang, Zhou, Rui

    Published in Scientific reports (22-11-2023)
    “…Fatty acid metabolism (FAM) is associated with prognosis and immune microenvironment remodeling in many tumors. It is currently unknown how FAM affects the…”
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    Long‐term outcome and pattern of failure for patients with nasopharyngeal carcinoma treated with intensity‐modulated radiotherapy by Tian, Yun‐Ming, Liu, Ming‐Zhu, Zeng, Lei, Bai, Li, Lin, Cheng‐guang, Huang, Shao‐Min, Deng, Xiao‐Wu, Chong‐Zhao, Lu, Tai‐Xiang, Han, Fei

    Published in Head & neck (01-05-2019)
    “…Purpose To analyze the long‐term outcome and pattern of failure for patients with nasopharyngeal carcinoma (NPC) after intensity‐modulated radiotherapy (IMRT)…”
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    Two-Dimensional Silicon Atomic Layer Field-Effect Transistors: Electronic Property, Metal-Semiconductor Contact, and Device Performance by Sang, Pengpeng, Wang, Qianwen, Wei, Wei, Tai, Lu, Zhan, Xuepeng, Li, Yuan, Chen, Jiezhi

    Published in IEEE transactions on electron devices (01-04-2022)
    “…To provide fully CMOS-compatible 2-D materials, novel silicon atomic-layer-based field-effect transistors (FETs) are investigated thoroughly in this work, with…”
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    Asynchronous Reception Effects on Distributed Massive MIMO-OFDM System by Yan, Hangsong, Lu, I-Tai

    Published in IEEE transactions on communications (01-07-2019)
    “…In a distributed massive multiple-input and multiple-output (DM-MIMO) orthogonal frequency division multiplexing (OFDM) system, each of the multiple receivers…”
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    Hybrid Fingerprinting and Ray Extension Localization in NLOS Regions by Li, Jun, Lu, I-Tai, Lu, Jonathan S.

    “…A general non-asymptotic theoretical analysis is developed for fingerprinting localization system designs. Based on this analysis, hybrid fingerprinting and…”
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    Re-Annealing-Induced Recovery in 7nm Hf0.5Zr0.5O2 Ferroelectric Film: Phase Transition and Non-Switchable Region Repair by Li, Xiaopeng, Tai, Lu, Zhao, Guoqing, Zhan, Xuepeng, Wang, Xiaolei, Kobayashi, Masaharu, Wu, Juxuan, Chen, Jiezhi

    Published in IEEE electron device letters (01-08-2023)
    “…To achieve HfO 2 -based ferroelectric (FE) devices with robust reliabilities, the impacts of re-annealing on 7nm FE-Hf 0.5 Zr 0.5 O 2 (HZO) capacitors are…”
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    An analytical model for 2D consolidation of unsaturated soil with semi‐permeable boundaries considering self‐weight stress and time‐dependent loading by Liu, Yang, Zheng, Jun‐Jie, Lu, Jia‐Tai

    “…This paper proposes an analytical solution for 2D (two‐dimensional) consolidation of unsaturated soil with impeded drainage boundaries by considering the…”
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    Highly Reversible Molecular Photoswitches with Transition Metal Dichalcogenides Electrodes by Chen, Li‐Chuan, Shi, Jie, Lu, Zhi‐Xing, Lin, Rong‐Jian, Lu, Tai‐Ge, Zou, Yu‐Ling, Liang, Qing‐Man, Huang, Ruiyun, Shi, Jia, Xiao, Zong‐Yuan, Zhang, Yanxi, Liu, Junyang, Yang, Yang, Hong, Wenjing

    “…The molecule‐electrode coupling plays an essential role in photoresponsive devices with photochromic molecules, and the strong coupling between the molecule…”
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    Exposure to serotonin adversely affects oligodendrocyte development and myelination in vitro by Fan, Lir‐Wan, Bhatt, Abhay, Tien, LuTai, Zheng, Baoying, Simpson, Kimberly L., Lin, Rick C. S., Cai, Zhengwei, Kumar, Praveen, Pang, Yi

    Published in Journal of neurochemistry (01-05-2015)
    “…Serotonin (5‐hydroxytryptamine, 5‐HT) has been implicated to play critical roles in early neural development. Recent reports have suggested that perinatal…”
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    Mechanisms for enhanced ferroelectric properties in ultra-thin Hf0.5Zr0.5O2 film under low-temperature, long-term annealing by Tai, Lu, Li, Xiaopeng, Dou, Xiaoyu, Sang, Pengpeng, Zhan, Xuepeng, Wu, Jixuan, Chen, Jiezhi

    Published in Applied physics letters (26-08-2024)
    “…To gain insight into the ferroelectric mechanisms under reduced thermal budget and thickness scaling, a 4.6 nm ultra-thin ferroelectric Hf0.5Zr0.5O2 capacitor…”
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    Polarization switching pathways of ferroelectric Zr-doped HfO2 based on the first-principles calculation by Dou, Xiaoyu, Wei, Wei, Sang, Pengpeng, Tai, Lu, Li, Xiaopeng, Zhan, Xuepeng, Wu, Jixuan, Chen, Jiezhi

    Published in Applied physics letters (26-02-2024)
    “…Based on the first principles calculation, the mechanisms of polarization switching behavior in ferroelectric Zr-doped HfO2 are investigated. Seven switching…”
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    Clinical usefulness of the lymphocyte-to-monocyte ratio and aggregate index of systemic inflammation in patients with esophageal cancer: a retrospective cohort study by Wang, Hui-Ke, Wei, Qian, Yang, Ya-Lan, Lu, Tai-Ying, Yan, Yan, Wang, Feng

    Published in Cancer cell international (27-01-2023)
    “…Multiple perioperative inflammatory markers are considered important factors affecting the long-term survival of esophageal cancer (EC) patients. Hematological…”
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    Imprint-Correlated Retention Loss in Hf₀.₅Zr₀.₅O₂ Ferroelectric Thin Film Through Wide-Temperature Characterizations by Li, Xiaopeng, Tai, Lu, Sang, Pengpeng, Dou, Xiaoyu, Zhan, Xuepeng, Xu, Hao, Wang, Xiaolei, Wu, Jixuan, Chen, Jiezhi

    Published in IEEE transactions on electron devices (01-09-2024)
    “…To address the concerns on the retention loss of HfO2-based ferroelectric (FE) devices in versatile applications, we conduct a comprehensive wide temperature…”
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