Search Results - "Lots’ko A. P."

Features of transformation of impurity-defect complexes in СdTe:Сl under the influence of microwave radiation by Budzulyak, S. I., Korbutyak, D. V., Lots'ko, A. P., Vakhnyak, N. D., Kalitchuk, S. M., Demchina, L. A., Konakova, R. V., Shinkarenko, V. V., Mel'nichuk, A. V.

“…High-resistance cadmium telluride single crystals are promising material for production of ionizing radiation detectors. To increase crystal resistance, they…”
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Effect of microwave (24GHz) radiation treatment on impurity photoluminescence of CdTe:Cl single crystals by Red׳ko, R.A., Budzulyak, S.I., Vakhnyak, N.D., Demchina, L.A., Korbutyak, D.V., Konakova, R.V., Lotsko, A.P., Okhrimenko, O.B., Berezovskaya, N.I., Bykov, Yu.V., Egorov, S.V., Eremeev, A.G.

“…Effect of microwave radiation (24GHz) on transformation of impurity-defect complexes in CdTe:Cl single crystals within the spectral range 1.3–1.5eV was studied…”
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Effect of microwave treatment on the luminescence properties of CdS and CdTe:Cl Single Crystals by Red’ko, R. A., Budzulyak, S. I., Korbutyak, D. V., Lotsko, A. P., Vakhnyak, N. D., Demchyna, L. A., Kalytchuk, S. M., Konakova, R. V., Milenin, V. V., Bykov, Yu. V., Egorov, S. V., Eremeev, A. G.

“…The effect of microwave radiation on the luminescence properties of CdS and CdTe:Cl single crystals is studied. It is established that the exposure of these…”
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Effect of microwave irradiation on the photoluminescence of bound excitons in CdTe:Cl single crystals by Korbutyak, D. V., Lotsko, A. P., Vakhnyak, N. D., Demchuna, L. A., Konakova, R. V., Milenin, V. V., Red’ko, R. A.

“…The effect of microwave radiation on the transformation of impurity-based structural complexes in Cd Te :Cl single crystals is studied using low-temperature…”
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Features of manufacturing Cd1–xZnxTe ionizing radiation detector by Tomashik Z. F., Stratiichuk I. B., Tomashik V. N., Budzulyak S. I., Gnativ I. I., Komar V. K., Dubina N. G., Lots’ko A. P., Korbutyak D. V., Demchina L. A., Vakhnyak N. D.

“…The article describes a newly-developed method of manufacturing of an operating element of the Cd1–xZnxTe-detector of ionizing radiation with high sensitivity…”
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