Search Results - "Lotkhov, S.V."

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  1. 1

    Progress Towards the Electron Counting Capacitance Standard at PTB by Scherer, H., Lotkhov, S.V., Willenberg, G.-D., Camarota, B.

    “…We report on the progress and new results in the setup of the electron counting capacitance standard (ECCS) at Physikalisch-Technische Bundesanstalt (PTB),…”
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    Journal Article
  2. 2

    Cooper Pair Transport in a Resistor-Biased Josephson Junction Array by Lotkhov, S.V., Krupenin, V.A., Zorin, A.B.

    “…The dc transport properties of long arrays of small Al Josephson junctions, biased through on-chip Cr resistors, are studied. The IV characteristics show a…”
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    Journal Article
  3. 3

    Progress in measurements of a single-electron pump by means of a CCC by Feltin, N., Devoille, L., Piquemal, F., Lotkhov, S.V., Zorin, A.B.

    “…This paper deals with the improvements of the BNM-LNE experimental setup based on a cryogenic current comparator (CCC) devoted to the high-accuracy measurement…”
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    Journal Article
  4. 4

    Steps toward a capacitance standard based on single-electron counting at PTB by Scherer, H., Lotkhov, S.V., Willenberg, G.-D., Zorin, A.B.

    “…A capacitance standard based on the definition of capacitance C=Ne/U is realized if a capacitor is charged with a known number N of electrons (e is the…”
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    Journal Article
  5. 5

    First steps toward a quantum capacitance standard at METAS by Hof, C., Jeanneret, B., Eichenberger, A., Overney, F., Lotkhov, S.V.

    “…In the fifth framework program of the European Commission, several metrology institutes have teamed up in a project (COUNT) aiming at the realization of a…”
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    Journal Article
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    Recent progress in the setup of the electron counting capacitance standard at PTB by Scherer, H., Lotkhov, S.V., Willenberg, G.-D.

    “…We report on our new results in the setup of an experiment where a capacitor is charged by a well-known number of electrons. Considerable progress was made by…”
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    Conference Proceeding
  8. 8

    Subgap conductivity in SIN-junctions of high barrier transparency by Lotkhov, S.V., Balashov, D.V., Khabipov, M.I., Buchholz, F.-I., Zorin, A.B.

    Published in Physica. C, Superconductivity (15-11-2006)
    “…We investigate the current–voltage characteristics of high-transparency superconductor–insulator–normal metal (SIN) junctions with the specific tunnel…”
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    Journal Article
  9. 9

    Ultimate Speed of Dissipative Pumping of Cooper Pairs by Zorin, A.B., Lotkhov, S.V.

    “…Ultimate speed of operation of a 3-junction superconducting cooper pair pump with local resistors (R-pump) is estimated. It is shown that due to essential…”
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    Conference Proceeding
  10. 10

    Steps Towards a Capacitance Standard Based on Single-Electron Counting at PTB by Scherer, H., Lotkhov, S.V., Willenberg, G.D., Zorin, A.B.

    “…A quantum standard for capacitance is realized by charging a capacitor with a well-known number of electrons and measuring the voltage U across the capacitor…”
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    Conference Proceeding
  11. 11

    Investigation of the offset charge noise in single electron tunneling devices by Wolf, H., Ahlers, F.J., Niemeyer, J., Scherer, H., Weimann, T., Zorin, A.B., Krupenin, V.A., Lotkhov, S.V., Presnov, D.E.

    “…The offset charge noise in metallic single electron tunneling (SET) devices fabricated on dielectric substrates was experimentally studied. On the basis of…”
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    Journal Article
  12. 12

    Realistic and relevant models for the description of SET transistors by Furlan, M, Eichenberger, A.L, Heinzel, T, Jeanneret, B, Lotkhov, S.V

    Published in Physica. B, Condensed matter (01-07-2000)
    “…The principle of Coulomb charging effects in single electron tunneling (SET) devices is well understood in terms of the ‘orthodox theory’. However, known…”
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    Journal Article
  13. 13

    Superconducting electrometer based on the resistively shunted Bloch transistor by Lotkhov, S.V., Zangerle, H., Zorin, A.B., Weimann, T., Scherer, H., Niemeyer, J.

    “…We have fabricated the Bloch transistor shunted on-chip by a small-sized Cr resistor with R/sub s/=1 k/spl Omega/. The Bloch transistor normally consists of…”
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    Journal Article Conference Proceeding
  14. 14

    Progress in measurements of electron pump by means of a CCC by Feltin, N., Devoille, L., Piquemal, F., Lotkhov, S.V., Zorin, A.B.

    “…This paper deals with the improvements of the experimental setup devoted to high-accuracy measuring of current across the single electron pump carried out at…”
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    Conference Proceeding
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    Shunt-protected single-electron tunneling circuits fabricated on a quartz wafer by Lotkhov, S.V., Camarota, B., Scherer, H., Weimann, T., Hinze, P., Zorin, A.B.

    “…We address fabrication challenges for the single-electron tunneling (SET) devices, based on ultrasmall junctions Al/AlO x /Al. Nanoscale SET components are…”
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    Conference Proceeding
  17. 17

    Progress in the implementation of the capacitance standard based on single-electron counting at PTB by Scherer, H., Willenberg, G.D., Lotkhov, S.V., Zorin, A.B., Warnecke, P.

    “…We report on the progress achieved at PTB in setting up an experiment for the realization of a quantum capacitance standard based on the controlled charging of…”
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    Conference Proceeding
  18. 18

    The single electron R-pump: First experiment by Lotkhov, S.V., Bogoslovsky, S.A., Zorin, A.B., Niemeyer, J.

    “…We fabricated and tested the single electron R-pump, i.e., a three-junction Al circuit with on-chip Cr resistors. Due to the presence of the resistors (R>R/sub…”
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    Conference Proceeding
  19. 19

    Investigation of the offset charge noise in single electron tunneling devices by Ahlers, F.-J., Krupenin, V.A., Lotkhov, S.V., Niemeyer, J., Presnov, D.E., Scherer, H., Weimann, T., Wol, H.

    “…The offset charge noise in metallic single electron tunneling (SET) devices fabricated on dielectric substrates was experimentally studied. On the basis of…”
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    Conference Proceeding
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