Search Results - "Lostetter, AB"
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A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices
Published in IEEE transactions on power electronics (01-05-2014)“…This paper presents an isolated on-board vehicular battery charger that utilizes silicon carbide (SiC) power devices to achieve high density and high…”
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Journal Article -
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A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices
Published in IEEE transactions on power electronics (01-05-2014)“…This paper presents an isolated on-board vehicular battery charger that utilizes silicon carbide (SiC) power devices to achieve high density and high…”
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Journal Article -
3
Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments
Published in 2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720) (2004)“…This paper discusses the current state of SiC electronics research at Arkansas Power Electronics International, Inc. (APEI) with regard to high-temperature…”
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Conference Proceeding
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An overview to integrated power module design for high power electronics packaging
Published in Microelectronics and reliability (01-03-2000)“…In recent years, there has been an explosion in demand for smaller and lighter, more efficient, and less expensive power electronic supplies and converters…”
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Journal Article -
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High-temperature silicon carbide (SiC) power switches in multichip power module (MCPM) applications
Published in Fourtieth IAS Annual Meeting. Conference Record of the 2005 Industry Applications Conference, 2005 (2005)“…Arkansas Power Electronics International, Inc, (APEI, Inc.) and University of Arkansas researchers have developed a novel, highly miniaturized motor drive…”
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Conference Proceeding -
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Compact modeling of environmentally induced radiation effects on electrical devices
Published in 2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720) (2004)“…This paper presents the feasibility of formalizing a compact modeling methodology for environmentally induced radiation effects, and of implementing that…”
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Conference Proceeding -
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Evaluation of gold and aluminum wire bond performance for high temperature (500 /spl deg/C) silicon carbide (SiC) power modules
Published in Proceedings Electronic Components and Technology, 2005. ECTC '05 (2005)“…This paper describes an investigation of aluminum and gold wire bonding processes for high temperature electronics. Ultrasonic wire bonding of 8 and 15 mil…”
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Conference Proceeding -
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Modeling vertical channel junction field effect devices in silicon carbide
Published in 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551) (2004)“…The electrical characterization and model development for silicon carbide (SiC) vertical channel SIT and JFET structures are presented in this work. A compact…”
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Conference Proceeding -
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Compact circuit simulation model of silicon carbide static induction and junction field effect transistors
Published in 2004 IEEE Workshop on Computers in Power Electronics, 2004. Proceedings (2004)“…The electrical characterization and model development for silicon carbide (SiC) vertical channel SIT and JFET structures are presented in this work. A compact…”
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Conference Proceeding