Search Results - "Lostetter, A."

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  1. 1

    High-Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules by Valle-Mayorga, J., Gutshall, C. P., Phan, K. M., Escorcia-Carranza, I., Mantooth, H. A., Reese, B., Schupbach, M., Lostetter, A.

    Published in IEEE transactions on power electronics (01-11-2012)
    “…Silicon Carbide (SiC) power semiconductors have shown the capability of greatly outperforming Si-based power devices. Faster switching and smaller on-state…”
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    Journal Article
  2. 2

    An overview to integrated power module design for high power electronics packaging by Lostetter, A.B., Barlow, F., Elshabini, A.

    Published in Microelectronics and reliability (01-03-2000)
    “…In recent years, there has been an explosion in demand for smaller and lighter, more efficient, and less expensive power electronic supplies and converters…”
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    Journal Article
  3. 3

    Low cost flex substrates for miniaturized electronic assemblies by Barlow, F., Lostetter, A., Elshabini, A.

    Published in Microelectronics and reliability (01-07-2002)
    “…Electronic power converters have been designed, produced, and disseminated to the market in mass quantities utilizing a number of fabrication techniques;…”
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    Journal Article
  4. 4
  5. 5

    High-temperature silicon carbide (SiC) power switches in multichip power module (MCPM) applications by Homberger, J.M., Mounce, S.D., Schupbach, R.M., Lostetter, A.B., Mantooth, H.A.

    “…Arkansas Power Electronics International, Inc, (APEI, Inc.) and University of Arkansas researchers have developed a novel, highly miniaturized motor drive…”
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    Conference Proceeding
  6. 6

    A 4H Silicon Carbide Gate Buffer for Integrated Power Systems by Ericson, N, Frank, S, Britton, C, Marlino, L, Ryu, SH, Grider, D, Mantooth, A, Francis, M, Lamichhane, R, Mudholkar, M, Shepherd, P, Glover, M, Valle-Mayorga, J, McNutt, T, Barkley, A, Whitaker, B, Cole, Z, Passmore, B, Lostetter, A

    Published in IEEE transactions on power electronics (01-02-2014)
    “…A gate buffer fabricated in a 2-mu m 4H silicon carbide (SiC) process is presented. The circuit is composed of an input buffer stage with a push-pull output…”
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    Journal Article
  7. 7

    A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices by Whitaker, Bret, Barkley, Adam, Cole, Zach, Passmore, Brandon, Martin, Daniel, McNutt, Ty R., Lostetter, Alexander B., Jae Seung Lee, Shiozaki, Koji

    Published in IEEE transactions on power electronics (01-05-2014)
    “…This paper presents an isolated on-board vehicular battery charger that utilizes silicon carbide (SiC) power devices to achieve high density and high…”
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    Journal Article
  8. 8

    Silicon carbide based Anode Supply Module Array for hall effect thrusters by Reese, B., Hearn, C., Lostetter, A.

    Published in 2013 IEEE Aerospace Conference (01-03-2013)
    “…This paper presents the development of a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) based Anode Supply Module (ASM) Array for the High Voltage Hall…”
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    Conference Proceeding
  9. 9

    A novel nonlinear switch cell topology by Reese, B., Passmore, B., Killeen, P., Lostetter, A.

    “…Switch cells consist of an array of power switches and passive components which can replace the main switches in many power topologies, allowing reduced…”
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    Conference Proceeding
  10. 10

    Silicon carbide power processing unit for Hall effect thrusters by Reese, B., McPherson, B., Schupbach, M., Lostetter, A.

    Published in 2012 IEEE Aerospace Conference (01-03-2012)
    “…This paper presents the development of a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) based power processing unit (PPU) power supply for the High…”
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    Conference Proceeding
  11. 11

    Ultra-Wide Temperature (-230°C to 130°C) DC-Motor Drive with SiGe Asynchronous Controller by Bourne, J., Schupbach, R., Hollosi, B., Jia Di, Lostetter, A., Mantooth, H.A.

    Published in 2008 IEEE Aerospace Conference (2008)
    “…Spacecraft routinely experience extreme environmental conditions, including cryogenic (as low as -230°C) and elevated temperatures (as high as +130°C)…”
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    Conference Proceeding Journal Article
  12. 12

    SiC intelligent multi module DC/DC converter system for space applications by Cilio, E., Mitchell, G., Schupbach, M., Lostetter, A.

    Published in 2009 IEEE Aerospace conference (01-03-2009)
    “…Power electronic converters are essential in every mission vehicle, with use in critical systems ranging from electric power management applications, to power…”
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    Conference Proceeding
  13. 13

    Ultra-lightweight, high efficiency SiC based power electronic converters for extreme environments by Mounce, S., McPherson, B., Schupbach, R., Lostetter, A.B.

    Published in 2006 IEEE Aerospace Conference (2006)
    “…Silicon-carbide (SiC) semiconductor devices have numerous potential advantages over their conventional silicon counterparts (i.e., higher switching…”
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    Conference Proceeding
  14. 14

    Materials issues for solutions of Power Electronic Building Blocks (PEBB) by Lostetter, A., Webster, J., Hoagland, R., Barlow, F.D., Elshabini-Riad, A., Nelson, A.

    “…This paper outlines a Power Electronic Building Block (PEBB) module design strategy which extends multichip module concepts to power electronics applications…”
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    Conference Proceeding
  15. 15

    High voltage, high power density bi-directional multi-level converters utilizing silicon and silicon carbide (SiC) switches by Reese, B., Schupbach, M., Lostetter, A., Rowden, B., Saunders, R., Balda, J.

    “…This paper presents a bi-directional ac-dc isolated converter designed to be utilized within the US Navy's Integrated Fight Through Power (IFTP) concept. To…”
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    Conference Proceeding
  16. 16

    A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices by Whitaker, B, Barkley, A, Cole, Z, Passmore, B, Martin, D, McNutt, TR, Lostetter, AB, Lee, JS, Shiozaki, K

    Published in IEEE transactions on power electronics (01-05-2014)
    “…This paper presents an isolated on-board vehicular battery charger that utilizes silicon carbide (SiC) power devices to achieve high density and high…”
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    Journal Article
  17. 17

    Design and Fabrication of a High Temperature (250 °C Baseplate), High Power Density Silicon Carbide (SiC) Multichip Power Module (MCPM) Inverter by Cilio, E., Hornberger, J., McPherson, B., Schupbach, R., Lostetter, A.

    “…A proof-of-concept single-phase silicon carbide (SiC)-based 3 kW inverter multichip power module (MCPM) has been built and tested achieving significant volume…”
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    Conference Proceeding
  18. 18

    Model-based design tools for extending COTS components to extreme environments by Mantooth, H.A., Levy, A., Francis, A.M., Cilioq, E.S., Lostetter, A.B.

    Published in 2006 IEEE Aerospace Conference (2006)
    “…Model-based design (MBD) tools to predict the performance and useful life of commercial-off-the-shelf (COTS) components and COTS-based systems outside of their…”
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    Conference Proceeding
  19. 19

    High-temperature silicon carbide and silicon on insulator based integrated power modules by Lostetter, A., Hornberger, J., McPherson, B., Reese, B., Shaw, R., Schupbach, M., Rowden, B., Mantooth, A., Balda, J., Otsuka, T., Okumura, K., Miura, M.

    “…This paper presents the challenges and results of fabricating a high temperature silicon carbide based integrated power module. The gate driver for the module…”
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    Conference Proceeding
  20. 20

    Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments by Hornberger, J., Lostetter, A.B., Olejniczak, K.J., McNutt, T., Lal, S.M., Mantooth, A.

    “…This paper discusses the current state of SiC electronics research at Arkansas Power Electronics International, Inc. (APEI) with regard to high-temperature…”
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    Conference Proceeding