Search Results - "Losehand, R."

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  1. 1

    Integration of crossed anisotropy magnetic core into toroidal thin-film inductors by Frommberger, M., Schmutz, C., Tewes, M., McCord, J., Hartung, W., Losehand, R., Quandt, E.

    “…A new approach to RF thin-film inductors with an integrated magnetic core has been investigated. A toroidal inductor design was realized in thin-film…”
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    Journal Article Conference Proceeding
  2. 2

    VMOS technology applied to dynamic RAMs by Hoffmann, K., Losehand, R.

    Published in IEEE journal of solid-state circuits (01-10-1978)
    “…A seven-mask VMOS process has been developed for dynamic RAMs with self-aligned VMOS and planar Al-gate transistors. Using 4 /spl mu/m photolithography,…”
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    Journal Article
  3. 3

    A 64Kb VMOS RAM by Essl, D., Losehand, R., Rehn, B.

    “…This paper will cover a 64Kb dynamic RAM built with VMOS technology, featuring a folded bit line/sense amplifier configuration…”
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    Conference Proceeding
  4. 4

    VMOS dynamic RAM by Hoffmann, K., Losehand, R., Zapf, K.

    “…This paper will discuss the application of VMOS technology in the design of one-transistor 150 μm 2 memory cells using existing photolithography. The…”
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    Conference Proceeding
  5. 5

    A new approach to RF thin film microinductors by Froramberger, M., Tewes, M., McCord, J., Hartung, W., Loschand, R., Quandt, E.

    “…A new approach to RF thin film inductors has been investigated. A toroid inductor design was realized in thin film technology. An operating frequency in the…”
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    Conference Proceeding
  6. 6

    Realization of a 65K dynamic RAM device making exclusive use of VMOS transistors by von Basse, P.W., Edwards, D.G., Essl, D.V., Hofmann, R., Losehand, R.

    “…A VMOS RAM, implemented without planar transistors requires only 6 mask steps instead of 7 and offers more options in process optimization, for example in the…”
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    Conference Proceeding