Search Results - "Losch, R"

Salt-Templated Platinum-Copper Porous Macrobeams for Ethanol Oxidation by F. John Burpo, Enoch A. Nagelli, Anchor R. Losch, Jack K. Bui, Gregory T. Forcherio, David R. Baker, Joshua P. McClure, Stephen F. Bartolucci, Deryn D. Chu

“…Platinum nanomaterials provide an excellent catalytic activity for diverse applications and given its high cost, platinum alloys and bi-metallic nanomaterials…”
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Xylem sap flow and drought stress of Fraxinus excelsior saplings by Stohr, A., Losch, R.

“…We report on diurnal and seasonal variations in sap flow rate and stem water potential of Fraxinus excelsior L. saplings growing at the edge of a…”
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14xx-nm high brightness tapered diode lasers grown by solid-source MBE by Kallenbach, S., Aidam, R., Losch, R., Kaufel, G., Kelemen, M.T., Mikulla, M., Weimann, G.

“…We demonstrate a 1470-nm InGaAsP high-power tapered diode laser grown by all solid-source molecular beam epitaxy. Devices compare well to metal-organic vapor…”
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High-gain submillimeter-wave mHEMT amplifier MMICs by Tessmann, A, Leuther, A, Massler, H, Hurm, V, Kuri, M, Zink, M, Riessle, M, Losch, R

“…A compact H-band (220-325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier has been developed, based on a grounded coplanar waveguide…”
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Mechanism of Flood Tolerance in Reed, Phragmites australis (Cav.) Trin. ex Steudel by Gries, C., Kappen, L., Losch, R.

“…Important factors, such as porosity, respirational O2consumption, O2release of the roots and iron oxidation on the root surface, which are involved in the…”
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A novel approach to the in situ measurement of oxygen concentrations in the sapwood of woody plants by Gansert, D., Burgdorf, M., Lösch, R.

“…A novel technique for the physico‐chemical analysis of xylem sap by underwater access to the sapwood of trees is described. In situ measurements of dissolved…”
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35 nm metamorphic HEMT MMIC technology by Leuther, A., Tessmann, A., Massler, H., Losch, R., Schlechtweg, M., Mikulla, M., Ambacher, O.

“…A metamorphic high electron mobility transistor (mHEMT) technology featuring 35 nm gate length has been developed. The optimized MBE grown layer sequence has a…”
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10-Gb/s standard fiber transmission using directly modulated 1.55-μm quantum-well DFB lasers by Mohrdiek, S., Burkhard, H., Steinhagen, F., Hillmer, H., Losch, R., Schlapp, W., Gobel, R.

“…10-Gb/s long-haul transmission on standard single-mode fibers at 1.55 μm with intensity modulated, low-chirp MQW DFB lasers is investigated. Successful…”
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Metamorphic HEMT technology for low-noise applications by Leuther, A., Tessmann, A., Kallfass, I., Losch, R., Seelmann-Eggebert, M., Wadefalk, N., Schafer, F., Gallego Puyol, J.D., Schlechtweg, M., Mikulla, M., Ambacher, O.

“…Different noise sources in HEMTs are discussed, and state-of-the-art low-noise amplifiers based on the Fraunhofer IAF 100 nm and 50 nm gate length metamorphic…”
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A 300 GHz mHEMT amplifier module by Tessmann, A., Leuther, A., Hurm, V., Massler, H., Zink, M., Kuri, M., Riessle, M., Losch, R., Schlechtweg, M., Ambacher, O.

“…In this paper, we present the development of an H-band (220 - 325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier module for use in…”
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Solid source MBE growth on InP-based DHBTs for high-speed data communication by Aidam, R., Lösch, R., Driad, R., Schneider, K., Makon, R.

“…We report on the development of a double heterojunction bipolar transistor (DHBT) technology on InP substrates for high-speed data communication. The…”
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Characterization of high-quality molecular beam epitaxial grown InxAlzGa1−x−zAs/InyAluGa1−u−yAs/InP heterostructures by Hillmer, H., Lösch, R., Schlapp, W., Pöcker, A.

“…We focus on molecular beam epitaxy (MBE) growth and characterization of InAlGaAsInP heterostructure layers by photoluminescence (PL) and X-ray diffraction…”
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Crystallographic orientation effects on the performance of InP-based heterojunction bipolar transistors by Driad, R., Lösch, R., Benkhelifa, F., Kuri, M., Rosenzweig, J.

“…We report the crystallographic orientation effects in InP-based heterojunction bipolar transistors (HBTs). The DC and RF characteristics of DHBTs fabricated on…”
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Drastic reduction of gate leakage in InAlAs/InGaAs HEMT's using a pseudomorphic InAlAs hole barrier layer by Heedt, C., Buchali, F., Prost, W., Brockerhoff, W., Fritzsche, D., Nickel, H., Losch, R., Schlapp, W., Tegude, F.-J.

“…Impact ionization in the channel of InAlAs/InGaAs HEMT's was shown to be a reason for excess gate leakage current. Hot electrons in the high field region of…”
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Diurnal courses and factorial dependencies of leaf conductance and transpiration of differently potassium fertilized and watered field grown barley plants by LÖSCH, R., JENSEN, C.R., ANDERSEN, M.N.

“…During the grain filling period we followed diurnal courses in leaf water potential (ψ₁), leaf osmotic potential (ψπ), transpiration (E), leaf conductance to…”
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Sa1394 Durability and Predictability of Response to Lubiprostone in Patients With Opioid-Induced Constipation by Spierings, Egilius L, Losch-Beridon, Taryn R, Wang, Martin, Lichtlen, Peter, Mareya, Shadreck M

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Design and realization of InGaAs/GaAs strained layer DFB quantum well lasers by Hansmann, S., Burkhard, H., Dahlhof, K., Schlapp, W., Losch, R., Nickel, H., Hillmer, H.

“…Optical waveguiding in an InGaAs/GaAs strained-layer distributed feedback (DFB) quantum well laser is investigated using the one-dimensional shooting method…”
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In Situ Investigation of Aluminum Gallium Arsenide/Gallium Arsenide Multilayer Structures under Inert and Reactive Media by Atomic Force Microscopy by Prohaska, Thomas, Friedbacher, Gernot, Grasserbauer, Manfred, Nickel, Heinrich, Loesch, Rainer, Schlapp, Winfried

“…The analytical benefits of in situ preparation and imaging under inert and reactive media using an AlGaAs/GaAs superlattice structure as a well-defined model…”
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InP-based DHBT technology for high-speed mixed signal and digital applications by Driad, R., Makon, R.E., Hurm, V., Benkhelifa, F., Losch, R., Rosenzweig, J., Schlechtweg, M.

“…We report on an InP DHBT-based technology featuring current gains of ~ 90, breakdown voltages of Gt 4.5 V and cut-off frequency (f T ) values of Gt 300 GHz…”
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Mo1262 Effects of Baseline Abdominal Pain on Response to Lubiprostone in Patients With Constipation-Predominant Irritable Bowel Syndrome by Chang, Lin, Chey, William D, Drossman, Douglas A, Losch-Beridon, Taryn R, Wang, Martin, Lichtlen, Peter, Mareya, Shadreck M

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