Search Results - "Lopez, Lorenzo P."

An electronic nose using a single graphene FET and machine learning for water, methanol, and ethanol by Hayasaka, Takeshi, Lin, Albert, Copa, Vernalyn C., Lopez, Lorenzo P., Loberternos, Regine A., Ballesteros, Laureen Ida M., Kubota, Yoshihiro, Liu, Yumeng, Salvador, Arnel A., Lin, Liwei

“…The poor gas selectivity problem has been a long-standing issue for miniaturized chemical-resistor gas sensors. The electronic nose (e-nose) was proposed in…”
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Defect-related temperature dependence of THz emission from GaAs/AlGaAs MQWs grown on off- and on-axis substrates by Afalla, Jessica P. C., de los Reyes, Alexander, Mag-usara, Valynn Katrine, Lopez, Lorenzo P., Yamamoto, Kohji, Tani, Masahiko, Somintac, Armando S., Salvador, Arnel A., Estacio, Elmer S.

“…Simultaneous molecular beam epitaxial growth of GaAs/AlGaAs multiple quantum wells on two different substrates (one on GaAs (100) and another on a GaAs…”
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Intense THz emission in high quality MBE-grown GaAs film with a thin n-doped buffer by Prieto, Elizabeth Ann P., Vizcara, Sheryl Ann B., Lopez, Lorenzo P., Vasquez, John Daniel E., Balgos, Maria Herminia M., Hashizume, Daisuke, Hayazawa, Norihiko, Kim, Yousoo, Tani, Masahiko, Somintac, Armando S., Salvador, Arnel A., Estacio, Elmer S.

“…Intense terahertz (THz) emission in high quality GaAs film upon ultrafast excitation is demonstrated. Results showed that high quality GaAs grown by molecular…”
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Low-temperature carrier dynamics in MBE-grown InAs/GaAs single- and multi-layered quantum dots investigated via photoluminescence and terahertz time-domain spectroscopy by De Los Reyes, Alexander E., Vasquez, John Daniel, Bardolaza, Hannah R., Lopez, Lorenzo P., Chang, Che-Yung, Somintac, Armando S., Salvador, Arnel A., Jang, Der-Jun, Estacio, Elmer S.

“…The photocarrier dynamics in molecular beam epitaxy (MBE)-grown single- (SLQD) and multi-layered (MLQD) InAs/GaAs quantum dots were studied. Photoluminescence…”
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Temperature dependence of THz emission and junction electric field of GaAs–AlGaAs modulation-doped heterostructures with different i-AlGaAs spacer layer thicknesses by Bardolaza, Hannah R., Vasquez, John Daniel E., Bacaoco, Miguel Y., de los Reyes, Alexander E., Lopez, Lorenzo P., Somintac, Armando S., Salvador, Arnel A., Estacio, Elmer S., Sarmago, Roland V.

“…Photocarrier dynamics in GaAs/AlGaAs modulation-doped heterostructures (MDH) having i-AlGaAs spacer layers of different thicknesses were investigated using…”
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A Quasi-Static Electrical Measurement Scheme for Probing Gas Reactions on Graphene Surface by Liu, Huiliang, Chu, Yao, Liu, Yumeng, Hayasaka, Takeshi, Lopez, Lorenzo P., Copa, Vernalyn C., Wang, Xiaohao, You, Zheng, Lin, Liwei

“…This work marks the first use of a quasi-static electrical measurement method on graphene field effect transistors (FET) to characterize sub-ppm level of toxic…”
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Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation by Sadia, Cyril P., Lopez, Lorenzo P., delos Santos, Ramon M., Muldera, Joselito E., De Los Reyes, Alexander E., Tumanguil, Mae Agatha C., Que, Christopher T., Mag-usara, Valynn Katrine, Tani, Masahiko, Somintac, Armando S., Estacio, Elmer S., Salvador, Arnel A.

“…We report the molecular beam epitaxy growth of high-quality p-InAs thin films evaluated in the context of 1.55μm femtosecond laser-excited THz emission…”
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Increased terahertz emission from SI-GaAs deposited with sub-wavelength spacing metal line array by Faustino, Maria Angela B., Lopez, Lorenzo P., Afalla, Jessica Pauline, Muldera, Joselito, Jayson Felix, Mark, Salvador, Arnel A., Somintac, Armando S., Estacio, Elmer S.

“…Increased terahertz (THz) emission of surface modified semi-insulating gallium arsenide (SI-GaAs) is reported. A metal line array with sub-wavelength spacing…”
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Thermo-optic Coefficient of Electrochemically Etched Porous Silicon by Lopez, Lorenzo P., Mabilangan, Arvin I., Faustino, Maria Angela B., Saplagio, Niel Gabriel E., Salvador, Arnel A., Somintac, Armando S.

“…Thermo-optic coefficient of electrochemically etched porous silicon layer was measured through temperature-dependent reflectance spectroscopy subjected to…”
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Tunable Photonic Crystals Based on Electrochemically Etched Porous Silicon by Saplagio, Niel Gabriel E., Mabilangan, Arvin I., Faustino, Maria Angela B., Lopez, Lorenzo P., Somintac, Armando S., Salvador, Arnel A.

“…In this paper, porous silicon photonic crystals were simulated and fabricated as distributed Bragg reflectors (DBRs), graded DBRs and Fabry-Perot (FP) filters…”
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A note on the effect of combined ultrasonic and heat treatments on the survival of thermoduric streptococci by Ordoñez, J A, Sanz, B, Hernandez, P E, Lopez-Lorenzo, P

“…The combined destructive effect of ultrasonic waves and heating on micro-organisms has been investigated using as a model two species of thermoduric…”
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Porosity dependence of terahertz emission of porous silicon investigated using reflection geometry terahertz time-domain spectroscopy by Mabilangan, Arvin I., Lopez, Lorenzo P., Faustino, Maria Angela B., Muldera, Joselito E., Cabello, Neil Irvin F., Estacio, Elmer S., Salvador, Arnel A., Somintac, Armando S.

“…Porosity dependent terahertz emission of porous silicon (PSi) was studied. The PSi samples were fabricated via electrochemical etching of boron-doped (100)…”
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ALD-RuO2 Functionalized Graphene FET with Distinctive Gas Sensing Patterns by Hayasaka, Takeshi, Lin, Liwei, Copa, Vernalyn C., Lopez, Lorenzo P., Loberternos, Regine A., Ballesteros, Laureen Ida M., Lin, Albert, Kubota, Yoshihiro, Liu, Huiliang, Salvador, Arnel A.

“…This work reports distinctive gas sensing patterns for water vapor and methanol using graphene FET (Field Effect Transistors) functionalized with atomic layer…”
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Photoluminescence and terahertz time-domain spectroscopy of MBE-grown single-layered InAs/GaAs quantum dots by De Los Reyes, Alexander E., Vasquez, John Daniel E., Lopez, Lorenzo P., Bardolaza, Hannah R., Chang, Che-Yung, Jang, Der-Jun, Somintac, Armando S., Salvador, Arnel A., Estacio, Elmer S.

“…We study the photoluminescence (PL) and terahertz (THz) emission characteristics of MBE-grown InAs/GaAs single-layered quantum dots. Results from…”
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Enhanced terahertz emission from SI-GaAs with a sub-wavelength 1D metal array by Faustino, Maria Angela B., Lopez, Lorenzo P., Afalla, Jessica, Muldera, Joselito, Felix, Mark Jayson, Salvador, Arnel A., Somintac, Armando S., Estacio, Elmer S.

“…Terahertz emission enhancement in SI-GaAs, having a deposited periodic 1D metal array, is reported. The one order enhancement is currently attributed to the…”
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