Search Results - "Look, D. C."

P-type doping and devices based on ZnO by Look, D. C., Claflin, B.

“…Both n‐type and p‐type ZnO will be required for development of homojunction light‐emitting diodes (LEDs) and laser diodes (LDs). It is easy to obtain strong…”
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Evidence of the Zn vacancy acting as the dominant acceptor in n-type ZnO by Tuomisto, F, Ranki, V, Saarinen, K, Look, D C

“…We have used positron annihilation spectroscopy to determine the nature and the concentrations of the open volume defects in as-grown and electron irradiated…”
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Evidence for native-defect donors in n-type ZnO by LOOK, D. C, FARLOW, G. C, REUNCHAN, Pakpoom, LIMPIJUMNONG, Sukit, ZHANG, S. B, NORDLUND, K

“…Recent theory has found that native defects such as the O vacancy V(O) and Zn interstitial Zn(I) have high formation energies in n-type ZnO and, thus, are not…”
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Compensation in Al-doped ZnO by Al-related acceptor complexes: synchrotron x-ray absorption spectroscopy and theory by T-Thienprasert, J, Rujirawat, S, Klysubun, W, Duenow, J N, Coutts, T J, Zhang, S B, Look, D C, Limpijumnong, S

“…The synchrotron x-ray absorption near edge structures (XANES) technique was used in conjunction with first-principles calculations to characterize Al-doped ZnO…”
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Stable highly conductive ZnO via reduction of Zn vacancies by Look, D. C., Droubay, T. C., Chambers, S. A.

“…Growth of Ga-doped ZnO by pulsed laser deposition at 200 °C in an ambient of Ar and H2 produces a resistivity of 1.5 × 10−4 Ω-cm, stable to 500 °C. The…”
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Recent advances in ZnO materials and devices by Look, D.C.

“…Wurtzitic ZnO is a wide-bandgap (3.437 eV at 2 K) semiconductor which has many applications, such as piezoelectric transducers, varistors, phosphors, and…”
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Characterization of homoepitaxial p -type ZnO grown by molecular beam epitaxy by Look, D. C., Reynolds, D. C., Litton, C. W., Jones, R. L., Eason, D. B., Cantwell, G.

“…An N-doped, p-type ZnO layer has been grown by molecular beam epitaxy on an Li-diffused, bulk, semi-insulating ZnO substrate. Hall-effect and conductivity…”
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The future of ZnO light emitters by Look, D. C., Claflin, B., Alivov, Ya. I., Park, S. J.

“…Compact, solid‐state UV emitters have many potential applications, and ZnO‐based materials are ideal for the wavelength range 390 nm and lower. However, the…”
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Quantitative analysis of surface donors in ZnO by Look, D.C.

“…At low temperatures, typically up to 30 K or even higher, the electrical properties of bulk ZnO samples are nearly always dominated by a conductive…”
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Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes by Alivov, Ya. I., Van Nostrand, J. E., Look, D. C., Chukichev, M. V., Ataev, B. M.

“…In this work, we report on the growth, fabrication, and device characterization of wide-band-gap heterojunction light-emitting diodes based on the n-ZnO/p-GaN…”
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Persistent n-type photoconductivity in p-type ZnO by Claflin, B., Look, D.C., Park, S.J., Cantwell, G.

“…Research activity on ZnO has increased over the past few years, with particular interest in potential electronic and optical device applications such as…”
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Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates by Alivov, Ya. I., Kalinina, E. V., Cherenkov, A. E., Look, D. C., Ataev, B. M., Omaev, A. K., Chukichev, M. V., Bagnall, D. M.

“…We report on the fabrication of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates. Hydride vapor phase epitaxy was used to grow p-type…”
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As-doped p-type ZnO produced by an evaporation∕sputtering process by Look, D. C., Renlund, G. M., Burgener, R. H., Sizelove, J. R.

“…Strongly p-type ZnO is produced by the following sequence of steps: (1) evaporation of Zn3As2 on a fused-quartz substrate at 350°C; and (2) sputtering of ZnO…”
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Induced conductivity in sol-gel ZnO films by passivation or elimination of Zn vacancies by Winarski, D. J., Anwand, W., Wagner, A., Saadatkia, P., Selim, F. A., Allen, M., Wenner, B., Leedy, K., Allen, J., Tetlak, S., Look, D. C.

“…Undoped and Ga- and Al- doped ZnO films were synthesized using sol-gel and spin coating methods and characterized by X-ray diffraction, high-resolution…”
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Identification of donors, acceptors, and traps in bulk-like HVPE GaN by Look, D.C., Fang, Z.-Q., Claflin, B.

“…The first GaN was grown by hydride vapor phase epitaxy (HVPE) more than 30 years ago, and now thick, large-area HVPE layers are being proposed as substrates…”
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The path to ZnO devices: donor and acceptor dynamics by Look, D. C., Jones, R. L., Sizelove, J. R., Garces, N. Y., Giles, N. C., Halliburton, L. E.

“…Hall‐effect, photoluminescence (PL), and electron paramagnetic resonance (EPR) measurements have been performed in single‐crystal ZnO samples annealed in air…”
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Study of the photoluminescence of phosphorus-doped p -type ZnO thin films grown by radio-frequency magnetron sputtering by Hwang, Dae-Kue, Kim, Hyun-Sik, Lim, Jae-Hong, Oh, Jin-Yong, Yang, Jin-Ho, Park, Seong-Ju, Kim, Kyoung-Kook, Look, D. C., Park, Y. S.

“…Phosphorus-doped p -type ZnO thin films were grown on sapphire by radio-frequency magnetron sputtering. The photoluminescence (PL) spectra revealed an acceptor…”
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Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO by Mosbacker, H. L., Strzhemechny, Y. M., White, B. D., Smith, P. E., Look, D. C., Reynolds, D. C., Litton, C. W., Brillson, L. J.

“…A conversion from ohmic to rectifying behavior is observed for Au contacts on atomically ordered polar ZnO surfaces following remote, room-temperature oxygen…”
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Traps in AlGaN ∕ GaN ∕ SiC heterostructures studied by deep level transient spectroscopy by Fang, Z.-Q., Look, D. C., Kim, D. H., Adesida, I.

“…AlGaN ∕ GaN ∕ SiC Schottky barrier diodes (SBDs), with and without Si 3 N 4 passivation, have been characterized by temperature-dependent current-voltage and…”
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Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy by Ko, H. J., Chen, Y. F., Hong, S. K., Wenisch, H., Yao, T., Look, D. C.

“…We have investigated the structural and optical properties of Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy. The carrier…”
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