Search Results - "Long, Shibing"

Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two‐Dimensional Layered Materials by Li, Yu, Long, Shibing, Liu, Qi, Lv, Hangbing, Liu, Ming

“…Reversible chemical and structural changes induced by ionic motion and reaction in response to electrical stimuli leads to resistive switching effects in…”
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Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging by Zhang, Ying, Mao, Ge-Qi, Zhao, Xiaolong, Li, Yu, Zhang, Meiyun, Wu, Zuheng, Wu, Wei, Sun, Huajun, Guo, Yizhong, Wang, Lihua, Zhang, Xumeng, Liu, Qi, Lv, Hangbing, Xue, Kan-Hao, Xu, Guangwei, Miao, Xiangshui, Long, Shibing, Liu, Ming

“…The resistive switching effect in memristors typically stems from the formation and rupture of localized conductive filament paths, and HfO 2 has been accepted…”
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In-sensor reservoir computing system for latent fingerprint recognition with deep ultraviolet photo-synapses and memristor array by Zhang, Zhongfang, Zhao, Xiaolong, Zhang, Xumeng, Hou, Xiaohu, Ma, Xiaolan, Tang, Shuangzhu, Zhang, Ying, Xu, Guangwei, Liu, Qi, Long, Shibing

“…Detection and recognition of latent fingerprints play crucial roles in identification and security. However, the separation of sensor, memory, and processor in…”
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An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application by Xue, HuiWen, He, QiMing, Jian, GuangZhong, Long, ShiBing, Pang, Tao, Liu, Ming

“…Gallium oxide (Ga 2 O 3 ) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s…”
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Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing by Zhou, Xuanze, Ma, Yongjian, Xu, Guangwei, Liu, Qi, Liu, Jinyang, He, Qiming, Zhao, Xiaolong, Long, Shibing

“…Vertical metal–oxide–semiconductor field effect transistor (MOSFET) is essential to the future application of ultrawide bandgap β-Ga2O3. In this work, we…”
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Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory by Liu, Sen, Lu, Nianduan, Zhao, Xiaolong, Xu, Hui, Banerjee, Writam, Lv, Hangbing, Long, Shibing, Li, Qingjiang, Liu, Qi, Liu, Ming

“…Negative‐SET behavior is observed in various cation‐based memories, which degrades the device reliability. Transmission electron microscopy results demonstrate…”
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Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology by Sun, Haitao, Liu, Qi, Li, Congfei, Long, Shibing, Lv, Hangbing, Bi, Chong, Huo, Zongliang, Li, Ling, Liu, Ming

“…Volatile threshold switching (TS) and non‐volatile memory switching (MS) are two typical resistive switching (RS) phenomena in oxides, which could form the…”
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Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM by Liu, Qi, Sun, Jun, Lv, Hangbing, Long, Shibing, Yin, Kuibo, Wan, Neng, Li, Yingtao, Sun, Litao, Liu, Ming

“…Evolution of growth/dissolution conductive filaments (CFs) in oxide‐electrolyte‐based resistive switching memories are studied by in situ transmission electron…”
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Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown by Ji, Yanfeng, Pan, Chengbin, Zhang, Meiyun, Long, Shibing, Lian, Xiaojuan, Miao, Feng, Hui, Fei, Shi, Yuanyuan, Larcher, Luca, Wu, Ernest, Lanza, Mario

“…Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for…”
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Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate by Sun, Haiding, Mitra, Somak, Subedi, Ram Chandra, Zhang, Yi, Guo, Wei, Ye, Jichun, Shakfa, Mohammad Khaled, Ng, Tien Khee, Ooi, Boon S., Roqan, Iman S., Zhang, Zihui, Dai, Jiangnan, Chen, Changqing, Long, Shibing

“…High‐quality epitaxy consisting of Al1−xGaxN/Al1−yGayN multiple quantum wells (MQWs) with sharp interfaces and emitting at ≈280 nm is successfully grown on…”
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Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode by Liu, Qi, Long, Shibing, Lv, Hangbing, Wang, Wei, Niu, Jiebin, Huo, Zongliang, Chen, Junning, Liu, Ming

“…Resistive memory (ReRAM) based on a solid-electrolyte insulator is a promising nanoscale device and has great potentials in nonvolatile memory, analog…”
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Emulating Short-Term and Long-Term Plasticity of Bio-Synapse Based on Cu/a-Si/Pt Memristor by Zhang, Xumeng, Liu, Sen, Zhao, Xiaolong, Wu, Facai, Wu, Quantan, Wang, Wei, Cao, Rongrong, Fang, Yilin, Lv, Hangbing, Long, Shibing, Liu, Qi, Liu, Ming

“…Short-term plasticity and long-term plasticity of bio-synapse are thought to underpin critical physiological functions in neural circuits. In this letter, we…”
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Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer by Zhao, Xiaolong, Liu, Sen, Niu, Jiebin, Liao, Lei, Liu, Qi, Xiao, Xiangheng, Lv, Hangbing, Long, Shibing, Banerjee, Writam, Li, Wenqing, Si, Shuyao, Liu, Ming

“…Conductive‐bridge random access memory (CBRAM) is considered a strong contender of the next‐generation nonvolatile memory technology. Resistive switching (RS)…”
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On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt by Guan, Weihua, Liu, Ming, Long, Shibing, Liu, Qi, Wang, Wei

“…We use convincing experimental evidences to demonstrate that the nonpolar resistive switching phenomenon observed in Cu/ZrO2:Cu/Pt memory devices conforms to a…”
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Nonpolar Nonvolatile Resistive Switching in Cu Doped ZrO2 by WEIHUA GUAN, SHIBING LONG, MING LIU, WEI WANG

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Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide by Guan, Weihua, Long, Shibing, Jia, Rui, Liu, Ming

“…Resistive switching characteristics of Zr O 2 films containing gold nanocrystals (nc-Au) are investigated for nonvolatile memory applications. The sandwiched…”
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Hysteresis-free Ga2O3 solar-blind phototransistor modulated from photoconduction to photogating effect by Tan, Pengju, Zou, Yanni, Zhao, Xiaolong, Hou, Xiaohu, Zhang, Zhongfang, Ding, Mengfan, Yu, Shunjie, Ma, Xiaolan, Xu, Guangwei, Hu, Qin, Long, Shibing

“…High tunability of photoresponse characteristics under work conditions is desired for a single solar-blind photodetector to be applied in multifarious fields…”
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The mechanism of degradation and failure in NiO/β-Ga2O3 heterojunction diodes induced by the high-energy ion irradiation by He, Song, Wen, Junpeng, Liu, Jinyang, Hao, Weibing, Zhou, Xuanze, Wang, Tianqi, Zhang, Zhengliang, Liu, Jianli, Xu, Guangwei, Yang, Shu, Long, Shibing

“…This work investigated the single-event effects (SEE) of NiO/β-Ga2O3 heterojunction diodes (HJDs) irradiated by 1.86 GeV tantalum ions with linear energy…”
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Stable Ga2O3 soft x-ray detector with ultrahigh responsivity by Yu, Shunjie, Liu, Yan, Hou, Xiaohu, Ding, Mengfan, Zou, Yanni, Guan, Yong, Wu, Zhao, Zhao, Xiaolong, Hu, Qin, Xu, Guangwei, Long, Shibing

“…Soft x-ray detectors play crucial roles in biology, chemistry, and lithography. Current soft x-ray detectors suffer from insufficient responsivity (R),…”
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Ultra‐High Performance Amorphous Ga2O3 Photodetector Arrays for Solar‐Blind Imaging by Qin, Yuan, Li, Li‐Heng, Yu, Zhaoan, Wu, Feihong, Dong, Danian, Guo, Wei, Zhang, Zhongfang, Yuan, Jun‐Hui, Xue, Kan‐Hao, Miao, Xiangshui, Long, Shibing

“…The growing demand for scalable solar‐blind image sensors with remarkable photosensitive properties has stimulated the research on more advanced solar‐blind…”
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