Search Results - "Londos, C"
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1
The origin of infrared bands in nitrogen-doped Si
Published in Journal of materials science (01-03-2022)“…This work reports Fourier-transform infrared spectroscopy (FTIR) investigations on electron irradiated, nitrogen-doped Czochralski-grown silicon (Cz–Si). The…”
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2
Nitrogen-Related Defects in Crystalline Silicon
Published in Applied sciences (01-02-2024)“…Defects and impurities play a fundamental role in semiconductors affecting their mechanical, optical, and electronic properties. Nitrogen (N) impurities are…”
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3
Carbon related defects in irradiated silicon revisited
Published in Scientific reports (09-05-2014)“…Electronic structure calculations employing hybrid functionals are used to gain insight into the interaction of carbon (C) atoms, oxygen (O) interstitials and…”
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Theoretical investigation of nitrogen-vacancy defects in silicon
Published in AIP advances (01-02-2022)“…Nitrogen-vacancy defects are important for the material properties of silicon and for the performance of silicon-based devices. Here, we employ spin polarized…”
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5
Perilipin Ablation Results in a Lean Mouse with Aberrant Adipocyte Lipolysis, Enhanced Leptin Production, and Resistance to Diet-Induced Obesity
Published in Proceedings of the National Academy of Sciences - PNAS (22-05-2001)“…Perilipin coats the lipid droplets of adipocytes and is thought to have a role in regulating triacylglycerol hydrolysis. To study the role of perilipin in…”
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6
Vacancy-oxygen defects in silicon: the impact of isovalent doping
Published in Journal of materials science. Materials in electronics (01-06-2014)“…Silicon is the mainstream material for many nanoelectronic and photovoltaic applications. The understanding of oxygen related defects at a fundamental level is…”
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7
Infrared spectroscopy studies of localized vibrations in neutron irradiated silicon
Published in Journal of materials science. Materials in electronics (01-08-2019)“…We investigate neutron irradiation-induced defects in p-type Czochralski silicon (Cz–Si) subjected initially to heat treatments under high hydrostatic pressure…”
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8
Role of PAT proteins in lipid metabolism
Published in Biochimie (2005)“…One of the central reactions in bodily energy metabolism is lipolysis in adipocytes, the reaction that governs the release of stored fatty acids from the…”
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9
Infrared study of defects in nitrogen-doped electron irradiated silicon
Published in Journal of materials science. Materials in electronics (01-02-2016)“…Nitrogen is a key dopant in Czochralski silicon widely used to control properties of Si wafers for applications in the microelectronics industry. Most of these…”
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10
The Ci(SiI)n defect in neutron-irradiated silicon
Published in Journal of materials science. Materials in electronics (2020)“…We report experimental results in neutron-irradiated silicon containing carbon. Initially, carbon interstitial (C i ) defects form and readily associate with…”
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IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon
Published in Journal of materials science. Materials in electronics (01-07-2017)“…Oxygen (O) and carbon (C) are key impurities in silicon (Si) and the control of their properties and behavior is an important issue for the microelectronic…”
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12
Infrared signals correlated with self-interstitial clusters in neutron-irradiated silicon
Published in Journal of materials science. Materials in electronics (01-11-2013)“…Using infrared spectroscopy we have investigated the defect spectrum of neutron-irradiated Czochralski–silicon (Cz–Si). The study was focused on three weak…”
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13
Impact of isovalent defect engineering strategies on carbon-related clusters in silicon
Published in Journal of materials science. Materials in electronics (01-05-2013)“…In electron-irradiated silicon (Si) the formation of oxygen-vacancy pairs ( V O or A-centers) is deleterious and for this reason isovalent defect engineering…”
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14
The CiOi(SiI)2 defect in silicon: density functional theory calculations
Published in Journal of materials science. Materials in electronics (01-07-2017)“…Carbon–oxygen-self-interstitial defects in silicon (Si) are technologically important as they can impact the operation of devices through the concentration of…”
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15
Point defect engineering strategies to suppress A-center formation in silicon
Published in Applied physics letters (12-12-2011)“…We investigate the impact of tin doping on the formation of vacancy-oxygen pairs ( V O or A-centers) and their conversion to V O 2 clusters in…”
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16
Isovalent doping and the CiOi defect in germanium
Published in Journal of materials science. Materials in electronics (01-03-2018)“…Oxygen–carbon defects have been studied for decades in silicon but are less well established in germanium. In the present study we employ density functional…”
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17
Semi-empirical modelling of the di-interstitial defect in silicon
Published in Journal of materials science. Materials in electronics (01-12-2014)“…Previous infrared spectroscopy studies of the defect spectrum of neutron irradiated Czochralski grown silicon (Cz-Si) revealed a band at 533 cm −1 , which…”
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18
Modeling defect reactions processes to study the impact of carbon on the production and conversion of A-centers in silicon
Published in Journal of materials science. Materials in electronics (01-11-2014)“…The vacancy-oxygen ( V O or A-center) defect is one of the most significant defects in Czochralski-grown silicon (Cz-Si). Here we investigate the effect of…”
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19
Oxygen-vacancy defects in electron-irradiated Si: the role of carbon in their behavior
Published in Journal of materials science. Materials in electronics (01-02-2014)“…This is a detailed study of the effect of carbon impurity on the production of the oxygen-vacancy ( V O) pair and its conversion to the V O 2 defect, in…”
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20
Relative concentrations of carbon related defects in silicon
Published in Journal of materials science. Materials in electronics (01-11-2016)“…Irradiation induced defects in silicon are technologically important as they impact the electronic properties. Calculations based on density functional theory…”
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