Search Results - "Londoño‐Ramírez, Horacio"

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  1. 1

    Origin of High Current and Illumination Stress Instability in Self-Aligned a-InGaZnO Thin Film Transistors With Al2O3 as High-κ Gate Dielectric by Yu-Chieh Chien, Horacio Londono Ramirez, Steudel, Soeren, Rolin, Cedric, Pendurthi, Ravi, Ting-Chang, Chang, Genoe, Jan, Nag, Manoj

    Published in IEEE electron device letters (01-04-2020)
    “…This paper analyzes the effect of high current under illumination stress (HCIS) in self-aligned amorphous indium gallium zinc oxide transistors with Al2O3 as…”
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    Journal Article
  2. 2

    Multiplexed Surface Electrode Arrays Based on Metal Oxide Thin‐Film Electronics for High‐Resolution Cortical Mapping by LondoñoRamírez, Horacio, Huang, Xiaohua, Cools, Jordi, Chrzanowska, Anna, Brunner, Clément, Ballini, Marco, Hoffman, Luis, Steudel, Soeren, Rolin, Cédric, Mora Lopez, Carolina, Genoe, Jan, Haesler, Sebastian

    Published in Advanced science (01-03-2024)
    “…Electrode grids are used in neuroscience research and clinical practice to record electrical activity from the surface of the brain. However, existing passive…”
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  3. 3

    Actively Multiplexed μECoG Brain Implant System With Incremental-ΔΣ ADCs Employing Bulk-DACs by Huang, Xiaohua, Londono-Ramirez, Horacio, Ballini, Marco, Van Hoof, Chris, Genoe, Jan, Haesler, Sebastian, Gielen, Georges, Helleputte, Nick Van, Lopez, Carolina Mora

    Published in IEEE journal of solid-state circuits (01-11-2022)
    “…Fundamental neuroscience research and high-performance neuro-prostheses require large-scale brain interfaces with ever-greater spatial resolution across a…”
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  4. 4
  5. 5

    Origin of High Current and Illumination Stress Instability in Self-Aligned a-InGaZnO Thin Film Transistors with Al2O3 as High-К Gate Dielectric by Chien, Yu-Chieh, Ramirez, Horacio Londono, Steudel, Soeren, Rolin, Cedric, Pendurthi, Ravi, Chang, Ting-Chang, Genoe, Jan, Nag, Manoj

    Published in IEEE electron device letters (27-02-2020)
    “…This paper analyzes the effect of high current under illumination stress (HCIS) in self-aligned amorphous indium gallium zinc oxide transistors with Al2O3 as…”
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    Journal Article
  6. 6

    An Analytical Method for Parameter Extraction in Oxide Semiconductor Field-Effect Transistors by Chien, Yu-Chieh, Londono-Ramirez, Horacio, Kuo, Chuan-Wei, Tsao, Yu-Ching, Nag, Manoj, Chang, Ting-Chang, Ang, Kah-Wee

    Published in IEEE transactions on electron devices (01-06-2021)
    “…This article presents an analytical method for parameter extraction in oxide semiconductor field-effect transistors (OS FETs), including threshold voltage…”
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    Journal Article
  7. 7