Search Results - "Loke, A. L. S."

An 8.0-Gb/s HyperTransport Transceiver for 32-nm SOI-CMOS Server Processors by Loke, A. L. S., Doyle, B. A., Maheshwari, S. K., Fischette, D. M., Wang, C. L., Tin Tin Wee, Fang, E. S.

“…We present an 8.0-Gb/s HyperTransport source-synchronous I/O integrated in a 32-nm SOI-CMOS processor for high-performance servers. Based on a 45-nm design…”
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Microstructure and reliability of copper interconnects by Changsup Ryu, Kee-Won Kwon, Loke, A.L.S., Haebum Lee, Nogami, T., Dubin, V.M., Kavari, R.A., Ray, G.W., Wong, S.S.

“…The effects of texture and grain structure on the electromigration lifetime of Cu interconnects are reported. Using different seed layers, [111]- and…”
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Demonstration of scaled (⩾0.12 μm2) Pb(Zr,Ti)O3 capacitors on W plugs with Al interconnect by Summerfelt, S. R., Moise, T. S., Xing, G., Colombo, L., Sakoda, T., Gilbert, S. R., Loke, A. L. S., Ma, S., Wills, L. A., Kavari, R., Hsu, T., Amano, J., Johnson, S. T., Vestcyk, D. J., Russell, M. W., Bilodeau, S. M., van Buskirk, P.

“…The measured switched polarization properties of integrated Pb(Zr,Ti)O3 (PZT) capacitors arrays have been found to show a small dependence on individual…”
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Kinetics of copper drift in PECVD dielectrics by Loke, A.L.S., Changsup Ryu, Yue, C.P., Cho, J.S.H., Wong, S.S.

“…We quantified the drift of Cu ions into various PECVD dielectrics by measuring shifts in capacitance-voltage behavior after subjecting Cu-gate MOS capacitors…”
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Bridging design and manufacture of analog/mixed-signal circuits in advanced CMOS by Jia Feng, Loke, A. L. S., Tin Tin Wee, Lackey, C. O., Okada, L. A., Schwan, C. T., Mantei, T., Morgan, J. H., Herden, M. M., Cooper, J. G., Zhi-Yuan Wu, Jung-Suk Goo, Xin Li, Icel, A. B., Bair, L. A., Fischette, D. M., Doyle, B. A., Fang, E. S., Leary, B. M., Krishnan, S.

“…We present device and circuit characterization resulting from technology/design co-development to improve the design and manufacture of analog/mixed-signal…”
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Kinetics of copper drift in low-kappa polymer interleveldielectrics by Loke, A L S, Wetzel, J T, Townsend, P H, Tanabe, T, Vrtis, R N, Zussman, M P, Kumar, D, Ryu, C, Wong, S S

“…This paper addresses the drift of copper ions (Cu( )) in various low-permittivity (low-kappa) polymer dielectrics to identify copper barrier requirements for…”
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Electrical leakage at low-K polyimide/TEOS interface by Loke, A.L.S., Wetzel, J.T., Stankus, J.J., Angyal, M.S., Mowry, B.K., Wong, S.S.

“…The effect of low-K polymer passivation on electrical leakage was investigated to evaluate the reliability of polymer integration on device wafers. Polyimide…”
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Extending HyperTransport™ technology to 8.0 Gb/s in 32-nm SOI-CMOS processors by Doyle, B. A., Loke, A. L. S., Maheshwari, S. K., Wang, C. L., Fischette, D. M., Cooper, J. G., Aggarwal, S. K., Wee, T. T., Lackey, C. O., Kedarnath, H. S., Oshima, M. M., Talbot, G. R., Fang, E. S.

“…We present an 8.0-Gb/s HyperTransport™ technology I/O built in a 32-nm SOI-CMOS processor for high-performance servers. Based on a 45-nm design that caps at…”
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