Search Results - "Loiko, K."

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    SiGe-Channel Confinement Effects for Short-Channel PFETs With Nonbandedge Gate Workfunctions by Winstead, B., Taylor, W.J., Verret, E., Loiko, K., Tekleab, D., Capasso, C., Foisy, M., Samavedam, S.B.

    Published in IEEE electron device letters (01-08-2007)
    “…Thin SiGe-channel confinement is found to provide significant control of the short channel effects typically associated with nonbandedge gate electrodes, in an…”
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    Journal Article
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    A critical re-examination of body-bias on the soft error rate and single-event latch-up in automotive SRAMs by Mahatme, N. N., Min, B., Loiko, K.

    “…Body-biasing is commonly used to regulate power/performance for modern integrated circuits. However, it has an additional soft error rate (SER) and single…”
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    Conference Proceeding
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    Multiple rings formation in cascaded conical refraction by Turpin, A, Kalkandjiev, Yu. V. Loiko. T. K, Mompart, J

    Published 05-09-2014
    “…Optics Letters, Vol. 38, Issue 9, pp. 1455-1457 (2013) When a light beam passes through a cascade of biaxial crystals with aligned optic axes, the resulting…”
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    Journal Article
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    A predictive semi-analytical threshold voltage model for deep-submicron MOSFET's by Lim, K.Y., Zhou, X., Lim, D., Zu, Y., Ho, H.M., Loiko, K., Lau, C.K., Tse, M.S., Choo, S.C.

    “…A compact threshold voltage model is developed for the prediction of deep-submicron MOSFETs scaling characteristic based on comprehensive 2-D device…”
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    Conference Proceeding
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    Stress Sensitivity of PMOSFET Under High Mechanical Stress by Tekleab, D., Adams, V., Loiko, K., Winstead, B., Parsons, S., Grudowski, P., Foisy, M.

    “…Using PMOSFETs with a range of built-in process induced stress and four-point bending characterization, we present evidence that the stress response of…”
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    Conference Proceeding
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    Multi-Layer Model for Stressor Film Deposition by Loiko, K.V., Adams, V., Tekleab, D., Winstead, B., Bo, X.-Z., Grudowski, P., Goktepeli, S., Filipiak, S., Goolsby, B., Kolagunta, V., Foisy, M.C.

    “…Multi-layer simulation is proposed for accurate modeling of stressor film deposition. Multi-layer simulation subdivides a single deposition into a series of…”
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    Conference Proceeding
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    An Embedded Silicon-Carbon S/D Stressor CMOS Integration on SOI with Enhanced Carbon Incorporation by Laser Spike Annealing by Grudowski, P., Dhandapani, V., Zollner, S., Goedeke, D., Loiko, K., Tekleab, D., Adams, V., Spencer, G., Desjardins, H., Prabhu, L., Garcia, R., Foisy, M., Theodore, D., Bauer, M., Weeks, D., Thomas, S., Thean, A., White, B.

    Published in 2007 IEEE International SOI Conference (01-10-2007)
    “…We report a CMOS-compatible embedded silicon-carbon (eSiC) source/drain stressor technology with NMOS performance enhancement. The integration includes up to…”
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    Conference Proceeding
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    Modeling and Simulation of Poly-Space Effects in Uniaxially-Strained Etch Stop Layer Stressors by Lixin Ge, Adams, V., Loiko, K., Tekleab, D., Xiang-Zheng Bo, Foisy, M., Kolagunta, V., Veeraraghavan, S.

    Published in 2007 IEEE International SOI Conference (01-10-2007)
    “…We develop, for the first time, a compact and scalable model to account for the poly-space effects (PSEs) in uniaxially-strained etch stop layer (ESL)…”
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    Conference Proceeding
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    1-D and 2-D Geometry Effects in Uniaxially-Strained Dual Etch Stop Layer Stressor Integrations by Grudowski, P., Adams, V., Bo, X.-Z., Loiko, K., Filipiak, S., Hackenberg, J., Jahanbani, M., Azrak, M., Goktepeli, S., Shroff, M., Liang, W.-J., Lian, S., Kolagunta, V., Cave, N., Wu, C.-H., Foisy, M., Tuan, H., Cheek, J.

    “…We report, for the first time, on the 2D boundary effects in a high performance 65nm SOI technology with dual etch stop layer (dESL) stressors. 1D geometry…”
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    Conference Proceeding
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    Optimization of Dual-ESL Stressor Geometry Effects for High Performance 65nm SOI Transistors by Xiang-Zheng Bo, Grudowski, P., Adams, V., Loiko, K., Tekleab, D., Filipiak, S., Hackenberg, J., Kolagunta, V., Foisy, M., Li-Te Lin, Fung, K.H., Chi-Hsi Wu, Hsiao-Chin Tuan, Cheek, J.

    “…We report on the optimized transverse and lateral boundaries of dual etch stop layer (dESL) stressors in both PMOS and NMOS achieved in 65nm SOI transistors…”
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    Conference Proceeding
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    16Mb Split Gate Flash Memory with Improved Process Window by Yater, J., Suhail, M., Kang, S.-T., Shen, J., Hong, C., Merchant, T., Gasquet, R.R.H., Loiko, K., Winstead, B., Williams, S., Rossow, M., Malloch, W., Syzdek, R., Chindalore, G.

    Published in 2009 IEEE International Memory Workshop (01-05-2009)
    “…This paper reports on recent bitcell optimizations that improve drive current and program performance. The 16 Mb and 32 Mb array results are best to-date for…”
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    Conference Proceeding
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    Influence of plasma induced damage during active etch on silicon defect generation by Nallapati, G., Loiko, K.V.

    “…The role of plasma induced damage during active nitride etch in silicon defect generation was investigated. A correlation was established between the overetch…”
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    Conference Proceeding
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    Methodology for ULSI LOCOS isolation built-in reliability analysis by Loiko, K.V., Peidous, I.V., Hok-Min Ho, Quek, E.K.B., Lim, D.H.Y.

    “…The results of studying the mechanisms of CMOS ULSI LOCOS isolation failures and an effective approach to qualifying the technological processes of isolation…”
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    Conference Proceeding
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    Functional state of the stomach after gastrectomy and vagotomy and the ways of improving the results of surgical treatment of peptic ulcer by Khoromskiĭ, L N, Benedikt, V V, Loĭko, I K, Kit, O N, Pustovoĭt, G T

    Published in Vestnik hirurgii im. I.I. Grekova (01-04-1990)
    “…A complex examination of 286 patients was performed after gastric resection by the method of Hofmeister-Finsterer, 64 patients after truncal vagotomy with…”
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    Journal Article
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