Search Results - "Loertscher, E."

Lower Kinetic Chain, Meet the Thinking Brain: A Scoping Review of Cognitive Function and Lower Extremity Injury Risk by Reyes, Michaela A, Probasco, Mark O, Worby, Trina N, Loertscher, Dylan E, Soderbeck, Lyndsey K, Huddleston, Wendy E

“…The classic model of non-contact ACL injury includes environmental, anatomical, hormonal and biomechanical risk factors which directly impact either the amount…”
Get full text

1335P Phase Ib study to evaluate the safety and tolerability of osimertinib with ipilimumab in EGFRm NSCLC by Puri, S., Patel, S., Kerrigan, K., Chalmers, A., George, S., Hammon, P., Loertscher, E., Lee, H., Boucher, K., Akerley, W.

Get full text

Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress by Signorello, G., Lörtscher, E., Khomyakov, P.A., Karg, S., Dheeraj, D.L., Gotsmann, B., Weman, H., Riel, H.

“…Many efficient light-emitting devices and photodetectors are based on semiconductors with, respectively, a direct or indirect bandgap configuration. The less…”
Get full text

Direct electrode-electrode tunneling in break-junction measurements of molecular conductance by Gotsmann, B., Riel, H., Lörtscher, E.

Get full text

Direct experimental observation of stacking fault scattering in highly oriented pyrolytic graphite meso-structures by Koren, E., Knoll, A. W., Lörtscher, E., Duerig, U.

“…Stacking fault defects are thought to be the root cause for many of the anomalous transport phenomena seen in high-quality graphite samples. In stark contrast…”
Get full text

Meso-scale measurement of the electrical spreading resistance in highly anisotropic media by Koren, E., Knoll, A. W., Lörtscher, E., Duerig, U.

“…The spreading resistance of circular contacts with a radius in the range from 60 nm to 500 nm has been measured in highly oriented pyrolytic graphite which is…”
Get full text

Silicon Nanowire Tunnel FETs: Low-Temperature Operation and Influence of High- k Gate Dielectric by Moselund, K. E., Bjork, M. T., Schmid, H., Ghoneim, H., Karg, S., Lortscher, E., Riess, W., Riel, H.

“…In this paper, we demonstrate p-channel tunnel FETs based on silicon nanowires grown with an in situ p-i-n doping profile. The tunnel FETs were fabricated with…”
Get full text

Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors by Ghoneim, H., Knoch, J., Riel, H., Webb, D., Björk, M. T., Karg, S., Lörtscher, E., Schmid, H., Riess, W.

“…We present a study on suppressing the ambipolar behavior of Schottky barrier metal-oxide-semiconductor field-effect transistors (MOSFET). Inserting a silicon…”
Get full text

Mortality from neurodegenerative disease and exposure to extremely low-frequency magnetic fields: 31 years of observations on Swiss railway employees by Röösli, Martin, Lörtscher, Manfred, Egger, Matthias, Pfluger, Dominik, Schreier, Nadja, Lörtscher, Emanuel, Locher, Peter, Spoerri, Adrian, Minder, Christoph

“…The objective of the present study was to investigate the relationship between extremely low-frequency magnetic field (ELF-MF) exposure and mortality from…”
Get more information

Internet of the Body - Wearable Monitoring and Coaching by Brunschwiler, T., Weiss, J., Paredes, S., Sridhar, A., Pluntke, U., Chau, S. Mai, Gerke, S., Barroso, J., Loertscher, E., Temiz, Y., Ruch, P., Michel, B., Zafar, S., van Kessel, T.

“…Wearables that acquire relevant vital and contextual parameters improve work safety as well as quality of life of elderly citizens or patients with chronic…”
Get full text

Internet of the body and cognitive companion: Enabling high-quality monitoring of patients at home by Straessle, R., Temiz, Y., Gerke, S., Weiss, J., Sridhar, A., Paredes, S., Brunschwiler, T., Loertscher, E., Ebejer, N., Michel, B., van Kessel, T., Faro, I., Zafar, S., Libsch, F., Taubenblatt, M. A., Matsumoto, K.

“…Wearables that continuously acquire vital and other medically relevant parameters facilitate treatment optimizations for individual patients and reduce the…”
Get full text

Internet of the Body and Cognitive Hypervisor by Strassle, R., Gerke, S., Brunschwiler, T., Temiz, Y., Weiss, J., Sridhar, A., Paredes, S., Loertscher, E., Ebejer, N., Michel, B., Lee, H.-M., Alvarado, C., Faro, I., Van Kessel, T., Meghelli, M., Taubenblatt, M. A., Zafar, S., Libsch, F., Matsumoto, K.

“…Wearables that continuously acquire medically relevant parameters can reduce duration of hospitalizations and derive treatment optimizations for individual…”
Get full text

Interface engineering for the suppression of ambipolar behavior in Schottky-barrier MOSFETs by Ghoneim, H., Knoch, J., Riel, H., Webb, D., Bjork, M.T., Karg, S., Lortscher, E., Schmid, H., Riess, W.

“…We study the suppression of ambipolar behavior of Schottky-barrier MOSFETs using an interface engineering approach. Inserting a thin silicon nitride layer…”
Get full text