Search Results - "Lochtefeld, Anthony"

Current matched three-terminal dual junction GaAsP/SiGe tandem solar cell on Si by Wang, Li, Conrad, Brianna, Soeriyadi, Anastasia, Zhao, Xin, Li, Dun, Diaz, Martin, Lochtefeld, Anthony, Gerger, Andrew, Perez-Wurfl, Ivan, Barnett, Allen

“…Lattice matched and current matched GaAsP/SiGe tandem solar cells on Si have the potential of 40% conversion efficiency [8]. A corrected three-terminal tandem…”
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Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells by Yoon, Woojun, Moore, James, Lochtefeld, Anthony, Kotulak, Nicole, Scheiman, David, Barnett, Allen, Jenkins, Phillip, Walters, Robert

“…In this work, we demonstrated an enhanced surface passivation of epitaxially grown boron-doped Si emitters by replacing thermal SiO2 as a passivation layer…”
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Analysis of Losses in Open Circuit Voltage for an 18-μm Silicon Solar Cell by Wang, Lu, Han, Jianshu, Lochtefeld, Anthony, Gerger, Andrew, Barnett, Allen

“…An 18 μm thin crystalline silicon solar cell was demonstrated, and its best open circuit voltage is 642.3 mV. However, this value is far from the cell’s…”
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Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells by Woojun Yoon, Lochtefeld, Anthony, Kotulak, Nicole, Scheiman, David, Barnett, Allen, Jenkins, Phillip, Walters, Robert

“…In this work, we demonstrated an enhanced surface passivation of epitaxially grown boron-doped emitters by replacing thermal SiO 2 as a passivation layer of p…”
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15%, 20 Micron thin, silicon solar cells on steel by Lochtefeld, Anthony, Lu Wang, Carroll, Mark, Jianshu Han, Stryker, Donald, Bengtson, Susan, Yu Yao, Dong Lin, Jingjia Ji, Leitz, Christopher, Lennon, Alison, Opila, Robert L., Barnett, Allen

“…A method to laminate a thin monocrystalline Si layer to a conductive and fracture-resistant carrier such as steel has been developed, resulting in a practical…”
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Threading dislocation density characterization in III–V photovoltaic materials by electron channeling contrast imaging by Yaung, Kevin Nay, Kirnstoetter, Stefan, Faucher, Joseph, Gerger, Andy, Lochtefeld, Anthony, Barnett, Allen, Lee, Minjoo Larry

“…Accurate and rapid threading dislocation density (TDD) characterization of III–V photovoltaic materials using electron channeling contrast imaging (ECCI) is…”
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Optical characterisation of III-V alloys grown on Si by spectroscopic ellipsometry by Conrad, Brianna, Lochtefeld, Anthony, Gerger, Andrew, Barnett, Allen, Perez-Wurfl, Ivan

“…Increased interest in novel substrates for III-V material growth has led to the use of alloy fractions other than those lattice-matched to traditional GaAs and…”
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Supercritical strained silicon on insulator by Lochtefeld, Anthony

“…Strained silicon on insulator (SSOI) technology has emerged as an attractive option for the introduction of wafer-scale strain into upcoming CMOS technology…”
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Performance improvement for epitaxially grown SiGe on Si solar cell using a compositionally graded SiGe base by Li, Dun, Zhao, Xin, Wang, Li, Conrad, Brianna, Soeriyadi, Anastasia, Lochtefeld, Anthony, Gerger, Andrew, Perez-Wurfl, Ivan, Barnett, Allen

“…Silicon germanium (SiGe) is a material with high mobility and relatively low bandgap making it an attractive candidate for the bottom subcell in a III-V tandem…”
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Short circuit current and efficiency improvement of SiGe solar cell in a GaAsP-SiGe dual junction solar cell on a Si substrate by Zhao, Xin, Li, Dun, Zhang, Tian, Conrad, Brianna, Wang, Li, Soeriyadi, Anastasia H., Han, Jianshu, Diaz, Martin, Lochtefeld, Anthony, Gerger, Andrew, Perez-Wurfl, Ivan, Barnett, Allen

“…SiGe materials on Si substrate are promising candidates to act as the bottom cell in a tandem structure, due to its high mobility, good process compatibility,…”
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Optical absorption of graded buffer layers and short circuit current improvement in SiGe solar cells grown on silicon substrates by Li, Dun, Zhao, Xin, Wang, Li, Conrad, Brianna, Soeriyadi, Anastasia H., Diaz, Martin, Gerger, Andrew, Lochtefeld, Anthony, Barnett, Allen, Perez-Wurfl, Ivan

“…A compositionally graded silicon germanium (Si1−xGex) buffer layer is a leverage technology that grows III–V materials on silicon (Si) substrates with low…”
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Material and device analysis of SiGe solar cell in a GaAsP–SiGe dual junction solar cell on Si substrate by Zhao, Xin, Li, Dun, Conrad, Brianna, Wang, Li, Soeriyadi, Anastasia H., Diaz, Martin, Lochtefeld, Anthony, Gerger, Andrew, Perez-Wurfl, Ivan, Barnett, Allen

“…Low bandgap Si(1−x)Ge(x) solar cells are designed, fabricated, characterized and analyzed for the purpose of acting as the bottom cell in a GaAsP–SiGe tandem…”
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Tandem GaAsP/SiGe on Si solar cells by Diaz, Martin, Wang, Li, Li, Dun, Zhao, Xin, Conrad, Brianna, Soeriyadi, Anasasia, Gerger, Andrew, Lochtefeld, Anthony, Ebert, Chris, Opila, Robert, Perez-Wurfl, Ivan, Barnett, Allen

“…GaAsP/SiGe dual-junction solar cells have been epitaxially grown on silicon substrates which have the potential of achieving 1-sun tandem efficiencies of 40%…”
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Development of a 16.8% Efficient 18-μm Silicon Solar Cell on Steel by Lu Wang, Lochtefeld, Anthony, Jianshu Han, Gerger, Andrew P., Carroll, Mark, Jingjia Ji, Lennon, Alison, Hongzhao Li, Opila, Robert, Barnett, Allen

“…Thin crystalline silicon solar cells have the potential to achieve high efficiency due to the potential for increased voltage. Thin silicon wafers are fragile;…”
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Spectral response of steady-state photoluminescence from GaAs1-xPx layers grown on a SiGe/Si system by Wang, Li, Pollard, Michael E., Juhl, Mattias Klaus, Conrad, Brianna, Soeriyadi, Anastasia, Li, Dun, Lochtefeld, Anthony, Gerger, Andrew, Bagnall, Darren M., Barnett, Allen, Perez-Wurfl, Ivan

“…Measuring the spectral response of photoluminescence (SRPL) in solar cells has recently attracted attention as it can be used as a contactless relative measure…”
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Optical constants of silicon germanium films grown on silicon substrates by Li, Dun, Zhao, Xin, Gerger, Andrew, Opila, Robert, Wang, Li, Conrad, Brianna, Soeriyadi, Anastasia H., Diaz, Martin, Lochtefeld, Anthony, Barnett, Allen, Perez-Wurfl, Ivan

“…Silicon germanium (Si sub(1-x)Ge sub(x)) is a material with high mobility and relatively low bandgap making it an attractive candidate for the bottom subcell…”
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Window optimization enabling broadband double-layer antireflection coating for GaAsP/SiGe tandem on silicon by Conrad, Brianna, Zhao, Xin, Li, Dun, Wang, Li, Diaz, Martin, Soeriyadi, Anastasia, Lochtefeld, Anthony, Gerger, Andrew, Barnett, Allen, Perez-Wurfl, Ivan

“…•A double-layer ARC is designed for tandem cells with spectral response up to 1400nm.•The window layer thickness is optimized at the same time for maximum…”
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Design, fabrication and analysis of germanium: silicon solar cell in a multi-junction concentrator system by Wang, Yi, Gerger, Andrew, Lochtefeld, Anthony, Wang, Lu, Kerestes, Chris, Opila, Robert, Barnett, Allen

“…A Ge:Si solar cell under a silicon solar cell can lead to as much as a 5.5% absolute efficiency gain for a multi-junction solar module at 30× concentration…”
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Extraction of Essential Solar Cell Parameters of Subcells in a Tandem Structure With a Novel Three-Terminal Measurement Technique by Soeriyadi, Anastasia H., Li Wang, Conrad, Brianna, Dun Li, Lochtefeld, Anthony, Gerger, Andrew, Barnett, Allen, Perez-Wurfl, Ivan

“…Detailed understanding of the device electrical parameters based on the solar cell diode model is important for the optimization of the material and device…”
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GaAsP on SiGe/Si material quality improvements with in-situ stress sensor and resulting tandem device performance by Schmieder, Kenneth J., Gerger, Andrew, Diaz, Martin, Pulwin, Ziggy, Curtin, Michael, Wang, Li, Ebert, Chris, Lochtefeld, Anthony, Opila, Robert L., Barnett, Allen

“…GaAsP solar cells have been grown on Si substrates facilitated by a SiGe graded buffer layer. Materials-based characterization demonstrates threading…”
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